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EMB09N03V
- メーカー
- Mfr。パート #EMB09N03V
- パッケージ
- データシート EMB09N03V DataSheet
- 在庫中9946
100% オリジナル &新しい
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365日の保証
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仕様
| Manufacturer | EMC |
| Package | PowerTDFN-8(3.1x3.1) |
| Operating Temperature | -55℃~+150℃ |
| Current - Continuous Drain(Id) | 20A |
| Pd - Power Dissipation | 21W |
| Drain to Source Voltage | 30V |
| Gate Threshold Voltage (Vgs(th)@Id) | 3V |
| Type | 1 N-channel |
| Gate Charge(Qg) | 17.6nC@10V |
| Input Capacitance(Ciss@Vds) | 828pF |
| Reverse Transfer Capacitance (Crss@Vds) | 174pF |
概要
Description
EMB09N03V is a specific model of an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for various electronic applications. It features a voltage rating typically around 30V and a continuous drain current capacity of approximately 9A, making it suitable for power management tasks in circuits such as switching regulators and motor drivers. The device is characterized by its low on-resistance, which contributes to higher efficiency and reduced heat generation during operation.
Key specifications include a low gate threshold voltage, allowing it to be easily driven by low-voltage logic levels. Its compact package design makes it ideal for space-constrained applications. When integrating EMB09N03V into a circuit, considerations around thermal management, gate drive requirements, and maximum ratings are crucial for optimal performance and reliability. Overall, it is a versatile component widely used in consumer electronics, automotive systems, and industrial applications.
Key specifications include a low gate threshold voltage, allowing it to be easily driven by low-voltage logic levels. Its compact package design makes it ideal for space-constrained applications. When integrating EMB09N03V into a circuit, considerations around thermal management, gate drive requirements, and maximum ratings are crucial for optimal performance and reliability. Overall, it is a versatile component widely used in consumer electronics, automotive systems, and industrial applications.
Features
The EMB09N03V is a power MOSFET designed for efficient switching applications. Key features include:
1. Type: N-channel MOSFET.
2. Voltage Rating: Up to 30V, suitable for low-voltage applications.
3. Current Rating: High continuous drain current capability, typically around 75A, facilitating robust performance.
4. RDS(on): Low on-resistance, often around 12mΩ, improving efficiency and reducing heat generation during operation.
5. Gate Threshold Voltage: Low gate voltage required for activation, enhancing compatibility with various control circuits.
6. Package: Available in a compact TO-220 package, ensuring easy integration into designs and effective thermal management.
7. Applications: Ideal for power management, motor control, LED drivers, and other switching applications.
These features make the EMB09N03V suitable for both consumer and industrial electronic designs requiring reliable power handling and efficiency.
1. Type: N-channel MOSFET.
2. Voltage Rating: Up to 30V, suitable for low-voltage applications.
3. Current Rating: High continuous drain current capability, typically around 75A, facilitating robust performance.
4. RDS(on): Low on-resistance, often around 12mΩ, improving efficiency and reducing heat generation during operation.
5. Gate Threshold Voltage: Low gate voltage required for activation, enhancing compatibility with various control circuits.
6. Package: Available in a compact TO-220 package, ensuring easy integration into designs and effective thermal management.
7. Applications: Ideal for power management, motor control, LED drivers, and other switching applications.
These features make the EMB09N03V suitable for both consumer and industrial electronic designs requiring reliable power handling and efficiency.
Package
The EMB09N03V is typically packaged in a TO-220 or similar type, which is a standard form factor used for power MOSFETs. This package type allows for efficient heat dissipation and easy mounting on heatsinks, making it suitable for various power applications.
Pinout
The EMB09N03V is a N-channel MOSFET with a pin count of 3. The pin configuration generally includes:
1. Gate (G): This pin controls the MOSFET's switching function. Applying a voltage to the gate allows current to flow between the drain and source.
2. Drain (D): This pin is where the current flows out of the MOSFET when it is in the "on" state.
3. Source (S): This pin serves as the return path for the current flowing through the drain.
This component is typically used in power management applications, such as in switching regulators and motor drivers, due to its low on-resistance and high efficiency. Always refer to the specific datasheet for detailed specifications and characteristics.
1. Gate (G): This pin controls the MOSFET's switching function. Applying a voltage to the gate allows current to flow between the drain and source.
2. Drain (D): This pin is where the current flows out of the MOSFET when it is in the "on" state.
3. Source (S): This pin serves as the return path for the current flowing through the drain.
This component is typically used in power management applications, such as in switching regulators and motor drivers, due to its low on-resistance and high efficiency. Always refer to the specific datasheet for detailed specifications and characteristics.
Manufacturer
The EMB09N03V is manufactured by EMB Semiconductor, a company specializing in the production of power management solutions, including MOSFETs, IGBTs, and other semiconductor devices. EMB Semiconductor focuses on delivering high-performance components for various applications, such as automotive, industrial, and consumer electronics. They are known for their innovations in power efficiency and reliability, catering primarily to the needs of electronic manufacturers and designers.
Application
The EMB09N03V is a N-channel MOSFET commonly used in various applications, including power management, DC-DC converters, motor drivers, and load switching. Its characteristics make it suitable for high-efficiency switching applications in consumer electronics, automotive systems, and industrial equipment. Additionally, it is utilized in battery management systems to optimize performance and energy efficiency.
Equivalent
The EMB09N03V is a N-channel MOSFET. Equivalent products include the IRLZ44N, STP16NF06, and FQP30N06L. Always verify specifications such as voltage, current ratings, and package type before substituting.
出荷
出荷方法私たち
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出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
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