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DS1245Y-70IND
IC NVSRAM 1MBIT PARALLEL 32EDIP
- メーカー
- Mfr。パート #DS1245Y-70IND
- パッケージ DIP-32
- データシート DS1245Y-70IND DataSheet
- 在庫中8530
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仕様
| Package | Tube |
| ProductStatus | Active |
| MemoryType | Non-Volatile |
| MemoryFormat | NVSRAM |
| Technology | NVSRAM (Non-Volatile SRAM) |
| MemorySize | 1Mb (128K x 8) |
| MemoryInterface | Parallel |
| WriteCycleTime-WordPage | 70ns |
| AccessTime | 70 ns |
| Voltage-Supply | 4.5V ~ 5.5V |
| OperatingTemperature | -40°C ~ 85°C (TA) |
| MountingType | Through Hole |
| Package/Case | 32-DIP Module (0.600, 15.24mm) |
概要
Description
The DS1245Y-70IND is a non-volatile static RAM (SRAM) designed for applications requiring fast data access and retention without power. It features a 256K x 8 memory configuration and utilizes a lithium battery backup to maintain data integrity during power loss. Operating at a speed of 70 ns, it allows for quick read and write operations, making it suitable for applications such as caching, data logging, and embedded systems.
The device has a simple interface compatible with common SRAM protocols, making it easy to integrate into existing designs. It operates within a temperature range of -40°C to +85°C, ensuring reliability in harsh environments. The DS1245Y-70IND also features low power consumption, which enhances its usability in battery-powered devices.
In summary, the DS1245Y-70IND is ideal for applications needing fast, reliable, and non-volatile memory solutions.
The device has a simple interface compatible with common SRAM protocols, making it easy to integrate into existing designs. It operates within a temperature range of -40°C to +85°C, ensuring reliability in harsh environments. The DS1245Y-70IND also features low power consumption, which enhances its usability in battery-powered devices.
In summary, the DS1245Y-70IND is ideal for applications needing fast, reliable, and non-volatile memory solutions.
Features
The DS1245Y-70IND is a non-volatile SRAM (Static Random Access Memory) designed for applications requiring data retention without power. Key features include:
1. Memory Type: 64K-bit (8K x 8) CMOS SRAM.
2. Non-Volatility: Uses a lithium battery to retain data for over 10 years, enabling data preservation during power loss.
3. Access Time: 70 ns access time for fast data retrieval.
4. Operating Voltage: Typically operates at 3.0V to 5.5V.
5. Low Power Consumption: Designed for low power operation, making it suitable for battery-powered applications.
6. Easy Integration: Compatible with standard SRAM interfaces, allowing straightforward integration into existing systems.
7. Industrial Temperature Range: Rated for -40°C to +85°C, suitable for harsh environments.
These features make the DS1245Y-70IND ideal for applications such as data logging, industrial control systems, and any device that requires reliable memory storage without continuous power supply.
1. Memory Type: 64K-bit (8K x 8) CMOS SRAM.
2. Non-Volatility: Uses a lithium battery to retain data for over 10 years, enabling data preservation during power loss.
3. Access Time: 70 ns access time for fast data retrieval.
4. Operating Voltage: Typically operates at 3.0V to 5.5V.
5. Low Power Consumption: Designed for low power operation, making it suitable for battery-powered applications.
6. Easy Integration: Compatible with standard SRAM interfaces, allowing straightforward integration into existing systems.
7. Industrial Temperature Range: Rated for -40°C to +85°C, suitable for harsh environments.
These features make the DS1245Y-70IND ideal for applications such as data logging, industrial control systems, and any device that requires reliable memory storage without continuous power supply.
Package
The DS1245Y-70IND is packaged in a 32-pin, dual in-line package (DIP) format. This design allows for easy integration into various electronic circuits, suitable for applications requiring non-volatile memory.
Pinout
The DS1245Y-70IND is a non-volatile SRAM with a pin count of 32. It features a 128K x 8 organization, allowing for data storage without external power. The main functions of the DS1245Y-70IND include:
- Data Storage: Retains data for over 10 years without power, thanks to built-in lithium battery backup.
- Accessing Data: Offers typical access times of 70 ns.
- Memory Management: Supports both read and write operations, enabling data manipulation.
- Control Signals: Includes control pins such as Chip Enable (CE), Output Enable (OE), and Write Enable (WE) for memory access management.
- Battery Monitoring: Monitors battery status to ensure data integrity.
This component is suitable for applications requiring reliable data retention, such as in industrial, automotive, and telecommunications systems.
- Data Storage: Retains data for over 10 years without power, thanks to built-in lithium battery backup.
- Accessing Data: Offers typical access times of 70 ns.
- Memory Management: Supports both read and write operations, enabling data manipulation.
- Control Signals: Includes control pins such as Chip Enable (CE), Output Enable (OE), and Write Enable (WE) for memory access management.
- Battery Monitoring: Monitors battery status to ensure data integrity.
This component is suitable for applications requiring reliable data retention, such as in industrial, automotive, and telecommunications systems.
Manufacturer
The DS1245Y-70IND is manufactured by Texas Instruments (TI), a prominent American technology company. Founded in 1930, Texas Instruments specializes in designing and manufacturing semiconductors and various integrated circuits, which are essential components in electronics. The company is well-known for its analog and embedded processing products, as well as for its digital signal processors and microcontrollers. TI serves a diverse range of industries, including automotive, communications, consumer electronics, and industrial applications. The DS1245Y-70IND is a high-performance real-time clock and SRAM device, commonly used in applications requiring precise timekeeping and memory functions. Texas Instruments is recognized for its innovation and commitment to advancing technological solutions.
Application
The DS1245Y-70IND is a battery-backed SRAM device primarily used in applications requiring non-volatile memory, such as industrial control systems, telecommunications, and data logging. It is ideal for storing critical data and system parameters in environments where power loss may occur, ensuring data integrity. Other application areas include automotive systems, medical devices, and embedded systems that necessitate reliable, fast-access memory with low power consumption.
Equivalent
Equivalent products to the DS1245Y-70IND include the DS1245Y-70, DS1245Y-100, and the DS1245Y-120, all of which are non-volatile SRAM solutions. Other compatible alternatives from different manufacturers may include the IDT 72V512L and the Cypress CY62167DV30. Always verify specifications to ensure compatibility with your application.
出荷
出荷方法私たち
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出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
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