DMN65D8LDW-7

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DMN65D8LDW-7

MOSFET 2N-CH 60V 0.18A SOT363

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仕様

Part Status Active
Base Product Number DMN65
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 180mA
Rds On (Max) @ Id, Vgs 6Ohm @ 115mA, 10V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.87nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 22pF @ 25V
Power - Max 300mW
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package 6-TSSOP, SC-88, SOT-363
Supplier Device Package SOT-363
Packaging Cut Tape (CT), Tape & Reel (TR)

概要

Description

The DMN65D8LDW-7 is a model of a discrete MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for various switching and amplification applications. It typically features low on-resistance, enabling efficient power management in electronic circuits. This component is commonly used in power supplies, motor control, and other applications where efficient switching is crucial.
Key specifications include a high voltage rating and a low threshold voltage, which allows for effective operation in modern electronic designs. The package design often aids in thermal management, ensuring reliable performance under load.
The DMN65D8LDW-7 is popular among engineers for its performance characteristics and reliability, making it a valuable component in both consumer electronics and industrial applications. When integrating this MOSFET into a circuit, consider factors such as gate drive requirements, thermal dissipation, and load characteristics to ensure optimal performance.

Features

The DMN65D8LDW-7 is a N-channel MOSFET designed for high-efficiency applications. Key features include:
1. Voltage Rating: Supports a maximum drain-source voltage (V_DS) of 65V, making it suitable for various power management applications.
2. Current Rating: Capable of handling continuous drain current (I_D) of up to 8A, allowing for robust performance in load management.
3. Low On-Resistance: Offers a low R_DS(on) value, which minimizes energy loss and heat generation during operation, improving overall efficiency.
4. Fast Switching Speed: Designed for rapid switching applications, ideal for converters and inverters in power supply circuits.
5. Thermal Performance: Features a high thermal stability and can operate in a range of temperatures, enhancing reliability in demanding conditions.
6. Package Type: Typically available in a compact surface-mount package, facilitating easy integration into circuit designs.
These features make the DMN65D8LDW-7 suitable for applications such as power supplies, motor drivers, and other switching applications.

Package

The DMN65D8LDW-7 is a surface-mount package type known as the DPAK (also referred to as TO-252). This package is commonly used for power MOSFETs and features a compact design suitable for efficient thermal management and space-saving applications.

Pinout

The DMN65D8LDW-7 is a dual N-channel MOSFET with a total of 8 pins. Its primary functions include switching and amplification in various electronic circuits. The pin configuration is as follows:
1. Gate 1 - Controls the first N-channel MOSFET.
2. Source 1 - Source terminal for the first MOSFET.
3. Drain 1 - Drain terminal for the first MOSFET.
4. Gate 2 - Controls the second N-channel MOSFET.
5. Source 2 - Source terminal for the second MOSFET.
6. Drain 2 - Drain terminal for the second MOSFET.
7. Common Source - Shared source connection for both MOSFETs (if applicable).
8. Common Drain - Shared drain connection for both MOSFETs (if applicable).
This device is often used in power management applications due to its low on-resistance and efficient performance.

Manufacturer

The DMN65D8LDW-7 is a power MOSFET manufactured by Nexperia, a global semiconductor company. Nexperia specializes in the production of discrete, logic, and MOSFET components, focusing on high-performance semiconductor devices. The company was formed after the divestment of NXP Semiconductors' standard products division in 2017 and operates with a strong emphasis on efficiency, reliability, and quality in its products. Nexperia serves various markets, including automotive, industrial, and consumer electronics, providing essential components for modern electronic applications.

Application

The DMN65D8LDW-7 is a N-channel MOSFET primarily used in applications such as power management, motor control, and switch-mode power supplies. Its low on-resistance and fast switching capabilities make it suitable for battery-powered devices, LED drivers, and automotive electronics. Additionally, it is utilized in general-purpose switching applications and can be found in consumer electronics and industrial equipment for efficient power delivery and thermal management.

Equivalent

The DMN65D8LDW-7 is a N-channel MOSFET. Equivalent products include the BSS138, BS170, and 2N7000. However, specifications may vary, so it's important to verify parameters like voltage, current, and package type to ensure compatibility for your specific application. Always consult datasheets for detailed comparisons.

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出荷料参照(DHL/FedEx):

DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。

フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。

UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。

TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。

EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。

登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。

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