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DMN62D0LFB-7

Name: DMN62D0LFB-7
Rating: 4.7 (12 reviews)

MOSFET N-CH 60V 100MA 3DFN

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Mfr。パート #DMN62D0LFB-7
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データシート
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仕様

Supplier	Diodes Incorporated
Package	Tape & Reel (TR),Cut Tape (CT)
ProductStatus	Active
FETType	N-Channel
Technology	MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)	60 V
Current-ContinuousDrain(Id)@25°C	100mA (Ta)
DriveVoltage(MaxRdsOnMinRdsOn)	1.5V, 4V
RdsOn(Max)@IdVgs	2Ohm @ 100mA, 4V
Vgs(th)(Max)@Id	1V @ 250µA
GateCharge(Qg)(Max)@Vgs	0.45 nC @ 4.5 V
Vgs(Max)	±20V
InputCapacitance(Ciss)(Max)@Vds	32 pF @ 25 V
PowerDissipation(Max)	470mW (Ta)
OperatingTemperature	-55°C ~ 150°C (TJ)
MountingType	Surface Mount
SupplierDevicePackage	X1-DFN1006-3

概要

Description

DMN62D0LFB-7 is a DMN-series N-channel enhancement-mode power MOSFET (Diodes Incorporated). It’s a 60 V-class device designed for high-efficiency switching in power electronics, such as DC-DC converters, motor drivers, and load switches. The device uses trench MOSFET technology for low on-resistance and fast switching, with an intrinsic body diode. The “-7” suffix typically denotes a specific packaging/test condition per the datasheet (e.g., tape-and-reel). For exact electricals, consult the official datasheet: VDS, ID (current rating), RDS(on), gate charge, and thermal characteristics, as these vary by package and revision. If you want, I can pull the exact specs or point you to the datasheet link.

Package

DMN62D0LFB-7 is a surface-mount power MOSFET packaged in DPAK (TO-252). The LFB suffix indicates lead-free/halogen-free; -7 denotes the specific revision/packaging variant. For exact confirmation, check the manufacturer’s datasheet.

Pinout

Pin count: 3 (G, D, S).
Function: N-channel enhancement-mode power MOSFET used as a switching transistor in power electronics (e.g., DC-DC converters). For exact pinout in the specific package, consult the datasheet.

Manufacturer

Manufacturer: Diodes Incorporated (Diodes Inc.).
Type of company: A global, publicly traded semiconductor company (primarily fabless) that designs and supplies discrete semiconductors, power MOSFETs, logic and analog ICs, and power-management components.