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DMN2058U-7

Name: DMN2058U-7
Rating: 4.7 (12 reviews)

MOSFET N-CH 20V 4.6A SOT23-3

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Mfr。パート #DMN2058U-7
パッケージ
データシート DMN2058U-7 DataSheet
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仕様

Supplier	Diodes Incorporated
Package	Tape & Reel (TR)
ProductStatus	Active
FETType	N-Channel
Technology	MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)	20 V
Current-ContinuousDrain(Id)@25°C	4.6A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn)	1.8V, 10V
RdsOn(Max)@IdVgs	35mOhm @ 6A, 10V
Vgs(th)(Max)@Id	1.2V @ 250µA
GateCharge(Qg)(Max)@Vgs	7.7 nC @ 10 V
Vgs(Max)	±12V
InputCapacitance(Ciss)(Max)@Vds	281 pF @ 10 V
PowerDissipation(Max)	1.13W
OperatingTemperature	-55°C ~ 150°C (TJ)
MountingType	Surface Mount
SupplierDevicePackage	SOT-23-3

概要

Description

DMN2058U-7, often referred to in the context of data management or decision modeling, typically focuses on frameworks and methodologies for effectively handling decision-making processes within organizations. This course or subject matter may cover topics such as decision modeling notation (DMN), business rules, and how to implement data-driven decision-making strategies.
Students or participants can expect to learn about the principles of DMN, including how to create decision tables, model complex decision logic, and integrate these models into business processes. The course may also emphasize best practices for managing data quality and governance to ensure effective and reliable decision-making.
Overall, DMN2058U-7 aims to equip individuals with the skills necessary to analyze, design, and implement decision models that enhance organizational efficiency and responsiveness in an increasingly data-driven environment.

Features

The DMN2058U-7 is a compact, high-performance dual N-channel MOSFET designed for various applications, including power management and switching. Key features include:
1. Voltage Rating: Maximum drain-source voltage (Vds) typically up to 30V, allowing it to handle moderate power loads.
2. Current Handling: Capable of conducting high continuous drain current, making it suitable for power applications.
3. Low RDS(on): Features a low on-resistance (RDS(on)) for efficient operation, reducing energy losses during switching.
4. Fast Switching Speed: Optimized for rapid switching, which enhances the performance in high-frequency applications.
5. Thermal Performance: Designed with good thermal management characteristics, enabling efficient heat dissipation.
6. Package Type: Available in a compact package that simplifies layout and integration into various circuit designs.
These features make the DMN2058U-7 ideal for applications such as DC-DC converters, battery management systems, and general-purpose switching requirements.

Package

The DMN2058U-7 is packaged in a surface mount SO-8 (Small Outline 8) package. This compact package design is suitable for applications requiring space-efficient components.

Pinout

The DMN2058U-7 is a dual N-channel MOSFET with a total of 8 pins. Its pinout and functions are as follows:
1. Gate 1 (G1): Input for the first N-channel MOSFET.
2. Drain 1 (D1): Drain connection for the first N-channel MOSFET.
3. Source 1 (S1): Source connection for the first N-channel MOSFET.
4. Source 2 (S2): Source connection for the second N-channel MOSFET.
5. Drain 2 (D2): Drain connection for the second N-channel MOSFET.
6. Gate 2 (G2): Input for the second N-channel MOSFET.
7. Drain 1 (D1): Common drain for the first MOSFET, also acts as the shared output.
8. Source 1 (S1): Common source for the first MOSFET, also acts as the shared output.
The DMN2058U-7 is typically used in applications such as power switching and load management due to its efficient operation and low on-resistance characteristics.

Manufacturer

The DMN2058U-7 is manufactured by Diodes Incorporated, a global supplier of high-quality semiconductor products. Founded in 1959, Diodes specializes in discrete, logic, and analog semiconductor solutions, serving a variety of markets including consumer electronics, automotive, and industrial applications. The company is known for its commitment to innovation and quality, offering a wide range of products such as diodes, transistors, and voltage regulators. Diodes Incorporated is headquartered in Plano, Texas, and operates globally, focusing on providing reliable and efficient electronic components for modern technology applications.

Application

DMN2058U-7 is a N-channel MOSFET widely used in various applications, including power management, switching circuits, and load driving in consumer electronics. It is suitable for DC-DC converters, motor control, and battery management systems. Its low on-resistance and fast switching capabilities make it ideal for high-efficiency designs in automotive, industrial, and renewable energy applications.

Equivalent

The DMN2058U-7 is a dual N-channel MOSFET. Equivalent products include the BSS138, BSS123, and IRF3708. Always verify specifications such as voltage, current rating, and package type when selecting equivalents for compatibility in specific applications.