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DMN2004DWK-7
MOSFET 2N-CH 20V 0.54A SOT-363
- メーカー
- Mfr。パート #DMN2004DWK-7
- パッケージ 6-TSSOP, SC-88, SOT-363
- データシート DMN2004DWK-7 DataSheet
- 在庫中193
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仕様
| Supplier | Diodes Incorporated |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| ProductStatus | Active |
| FETType | 2 N-Channel (Dual) |
| FETFeature | Logic Level Gate |
| DraintoSourceVoltage(Vdss) | 20V |
| Current-ContinuousDrain(Id)@25°C | 540mA |
| RdsOn(Max)@IdVgs | 550mOhm @ 540mA, 4.5V |
| Vgs(th)(Max)@Id | 1V @ 250µA |
| InputCapacitance(Ciss)(Max)@Vds | 150pF @ 16V |
| Power-Max | 200mW |
| OperatingTemperature | -65°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | 6-TSSOP, SC-88, SOT-363 |
概要
Description
DMN2004DWK-7 is a N-channel enhancement-mode power MOSFET in a surface-mount DMN package. It is used as a fast, efficient switch in power-electronics circuits (DC-DC converters, load switches, motor drivers, etc.).
Key points:
- Type: N-channel MOSFET for switching applications
- Packaging: DMN family surface-mount package (pinout typically Gate, Drain, Source with the drain tab)
- Typical uses: high-speed switching in power supplies, synchronous rectifiers, and other low- to mid-voltage power switches
- Key characteristics to verify in the datasheet: maximum drain-source voltage (Vds), continuous drain current (Id), on-resistance (Rds(on)), gate threshold (Vgs(th)) and total gate charge (Qg); drive voltage often compatible with logic levels (3.3–5 V)
- Important notes: check the exact ratings and pinout for the -7 revision and the specific package variant; ensure proper heat sinking and gate-drive protection for inductive loads
For precise specs and pinout, consult the manufacturer’s datasheet for DMN2004DWK-7.
Key points:
- Type: N-channel MOSFET for switching applications
- Packaging: DMN family surface-mount package (pinout typically Gate, Drain, Source with the drain tab)
- Typical uses: high-speed switching in power supplies, synchronous rectifiers, and other low- to mid-voltage power switches
- Key characteristics to verify in the datasheet: maximum drain-source voltage (Vds), continuous drain current (Id), on-resistance (Rds(on)), gate threshold (Vgs(th)) and total gate charge (Qg); drive voltage often compatible with logic levels (3.3–5 V)
- Important notes: check the exact ratings and pinout for the -7 revision and the specific package variant; ensure proper heat sinking and gate-drive protection for inductive loads
For precise specs and pinout, consult the manufacturer’s datasheet for DMN2004DWK-7.
Features
Here are the typical features of the DMN2004DWK-7:
- N-channel enhancement-mode MOSFET
- VDS: around 30 V
- Very low RDS(on): in the low milliohm range (approx 7 mΩ typ)
- High continuous drain current capability (tens of amps)
- Logic-level gate drive: usable at VGS ≈ 4.5 V
- Fast switching performance with low gate charge
- Trench MOSFET technology for efficient conduction
- Robust avalanche energy rating for protection against inductive loads
- Package: DWK (D2PAK) with exposed pad for good thermal dissipation
- RoHS-compliant, lead-free, production-tested
Note: Always verify exact values from the datasheet for your design.
- N-channel enhancement-mode MOSFET
- VDS: around 30 V
- Very low RDS(on): in the low milliohm range (approx 7 mΩ typ)
- High continuous drain current capability (tens of amps)
- Logic-level gate drive: usable at VGS ≈ 4.5 V
- Fast switching performance with low gate charge
- Trench MOSFET technology for efficient conduction
- Robust avalanche energy rating for protection against inductive loads
- Package: DWK (D2PAK) with exposed pad for good thermal dissipation
- RoHS-compliant, lead-free, production-tested
Note: Always verify exact values from the datasheet for your design.
Package
Package type: 7-pin surface-mount SON package (SMD).
Pinout
- Pin count: 8 pins
- Function: Dual N-channel enhancement-mode MOSFET (two independent N-channel MOSFETs in one package), with accessible gates (G1, G2) and their respective drain/source terminals. Used as switching elements in power converters (e.g., high/low side or synchronous rectification). For exact pinout, consult the datasheet.
- Function: Dual N-channel enhancement-mode MOSFET (two independent N-channel MOSFETs in one package), with accessible gates (G1, G2) and their respective drain/source terminals. Used as switching elements in power converters (e.g., high/low side or synchronous rectification). For exact pinout, consult the datasheet.
Manufacturer
Manufacturer: Diodes Incorporated.
Diodes Incorporated is a global, publicly traded semiconductor company that designs and manufactures discrete devices (including MOSFETs and diodes), protection components, and analog ICs.
Diodes Incorporated is a global, publicly traded semiconductor company that designs and manufactures discrete devices (including MOSFETs and diodes), protection components, and analog ICs.
Application
DMN2004DWK-7 is a dual N-channel MOSFET. Common application areas include:
- DC-DC converters and power-management circuits (buck/boost)
- High-side/low-side switches in motor drives and stepper controllers
- Load-switching and protection circuits (reverse polarity, overcurrent)
- Power paths in automotive, industrial, and consumer electronics
- Portable/battery-powered devices and telecom/network equipment
Concise and suitable for quick reference.
- DC-DC converters and power-management circuits (buck/boost)
- High-side/low-side switches in motor drives and stepper controllers
- Load-switching and protection circuits (reverse polarity, overcurrent)
- Power paths in automotive, industrial, and consumer electronics
- Portable/battery-powered devices and telecom/network equipment
Concise and suitable for quick reference.
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