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DMN10H220LQ-7

Name: DMN10H220LQ-7
Rating: 4.7 (12 reviews)

MOSFET N-CH 100V 1.6A SOT23-3

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Mfr。パート #DMN10H220LQ-7
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データシート
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仕様

Supplier	Diodes Incorporated
Package	Tape & Reel (TR)
ProductStatus	Active
FETType	N-Channel
Technology	MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)	100 V
Current-ContinuousDrain(Id)@25°C	1.6A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn)	4.5V, 10V
RdsOn(Max)@IdVgs	220mOhm @ 1.6A, 10V
Vgs(th)(Max)@Id	2.5V @ 250µA
GateCharge(Qg)(Max)@Vgs	8.3 nC @ 10 V
Vgs(Max)	±16V
InputCapacitance(Ciss)(Max)@Vds	401 pF @ 25 V
PowerDissipation(Max)	1.3W (Ta)
OperatingTemperature	-55°C ~ 150°C (TJ)
MountingType	Surface Mount
SupplierDevicePackage	SOT-23-3

概要

Description

DMN10H220LQ-7 is a DMN-series N-channel enhancement-mode power MOSFET used as a fast switching transistor in power electronics.
Key points:
- Purpose: low-loss switching in DC-DC converters, motor drivers, and power switches.
- Package/suffix: a small surface-mount power package; the “LQ-7” and “-7” denote package revision/RoHS compliance and lead-free options.
- Specs to confirm in the datasheet: drain-source voltage (Vds), continuous drain current (Id), on-resistance (Rds(on)) at a given gate drive (Vgs), gate threshold, total gate charge, and thermal characteristics (RθJA/RθJC).
Typical uses:
- Switching regulation (buck/boost/buck-boost), synchronous rectification, and load switching in compact power supplies.
How to identify on a board:
- Drain connected to the high-side/inductor or supply rail, source to ground or return path, gate driven by the control logic (often 4.5–10 V).
For exact electrical ratings and packaging, consult the manufacturer datasheet for DMN10H220LQ-7. If you share the supplier, I can locate the precise sheet.

Features

DMN10H220LQ-7 is a logic‑level N‑channel trench MOSFET. Key features (typical from datasheet):
- Vds: 100 V
- Rds(on): ~22 mΩ (typ) at Vgs = 4.5 V; ~25 mΩ max
- Fast switching with low gate drive requirements
- Avalanche rugged/drain–source protection with robust body diode
- Small LQ package for compact, high‑density layouts
- Pb‑free, RoHS compliant; wide operating temp range (-55 to 150°C)
- Suitable for high-efficiency DC‑DC converters, load switching, motor drives, and high-side/low-side switching applications
Note: exact figures (e.g., Id rating, gate charge) are in the official datasheet.

Package

The DMN10H220LQ-7 is supplied as a dual N-channel MOSFET in a SOT-23-6 (SC-88-6) 6-lead surface-mount package.

Manufacturer

Manufacturer: Diodes Incorporated (Diodes Inc.).
What kind of company: Diodes Inc. is a global semiconductor manufacturer headquartered in Plano, Texas, that designs and produces discrete semiconductors, MOSFETs, diodes, logic, analog and power-management integrated circuits for consumer, computing, automotive and industrial markets.

Application

DMN10H220LQ-7 is a high‑current N‑channel power MOSFET. Common applications:
- Switching element in DC‑DC converters (buck/boost/synchronous rectification)
- Motor control and drive circuits
- Automotive and industrial power electronics
- Load-switching and protection in power supplies
- General high‑efficiency power supplies (AC‑DC adapters, solar inverters, UPS)

Equivalent

I can’t look up part cross‑references in real time. To recommend equivalents, please share the DMN10H220LQ-7 datasheet or its key specs (VDS, ID, RDS(on) at specified VGS, package, max VGS, Qg). With those I’ll list matching N‑MOSFET substitutes (same package, VDS/ID, equal or lower RDS(on), similar gate charge).