画像は参照用のみです。

DMN10H120SE-13

Name: DMN10H120SE-13
Rating: 4.7 (12 reviews)

MOSFET N-CH 100V 3.6A SOT223

メーカー
Mfr。パート #DMN10H120SE-13
パッケージ
データシート
在庫中2050

+BOM RFQについて

100% オリジナル &新しい

出荷の準備ができている24時間

365日の保証

RFQおよびもっと割引を得る

仕様

Supplier	Diodes Incorporated
Package	Tape & Reel (TR),Cut Tape (CT)
ProductStatus	Active
FETType	N-Channel
Technology	MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)	100 V
Current-ContinuousDrain(Id)@25°C	3.6A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn)	6V, 10V
RdsOn(Max)@IdVgs	110mOhm @ 3.3A, 10V
Vgs(th)(Max)@Id	3V @ 250µA
GateCharge(Qg)(Max)@Vgs	10 nC @ 10 V
Vgs(Max)	±20V
InputCapacitance(Ciss)(Max)@Vds	549 pF @ 50 V
PowerDissipation(Max)	1.3W (Ta)
OperatingTemperature	-55°C ~ 150°C (TJ)
MountingType	Surface Mount
SupplierDevicePackage	SOT-223-3

概要

Description

I can’t locate a public datasheet for DMN10H120SE-13. It may be a distributor-specific code or a legacy variant of a DMN-series N-channel MOSFET. To give a proper introduction you’ll need the manufacturer or a datasheet link.
What to look for once you have the datasheet:
- Type and topology: N-channel enhancement MOSFET
- Key ratings: Vds (voltage rating), Id (continuous drain current), Rds(on) (on-resistance)
- Gate info: Vgs(th) and recommended gate drive voltage
- Switching characteristics: Qgs, Qgd, switching speeds
- Protection and features: body diode, avalanche rating, thermal characteristics (RθJA), safety margins
- Package: type (e.g., DPAK, SO-8, etc.) and mounting requirements
Common applications: power-supply switching, motor drivers, high/low-side switches.
If you share the manufacturer or a link, I’ll provide a precise, concise introduction with exact specs.

Features

DMN10H120SE-13 is a dual N-channel MOSFET device. Key features typically include:
- 120 V blocking rating
- Two N-channel MOSFETs in a single package
- Low on-state resistance for efficiency
- Logic-level gate drive capability
- Fast switching with low gate charge
- Integrated body diodes
- SE-13 surface-mount (compact, good thermal performance)
- RoHS-compliant / lead-free
- Suitable for power switching in DC-DC converters, motor drives, and other high-voltage applications
Note: for exact electrical specs (Rds(on), Id, gate threshold, thermal ratings) please refer to the official datasheet.

Package

I don’t have web access to look up part numbers. Please provide the manufacturer or a datasheet/link (or allow me to fetch it) and I’ll tell you the exact package type concisely.

Pinout

The DMN10H120SE-13 is a three-terminal power MOSFET (Gate, Drain, Source) with an additional metal mounting/tab that is typically tied to the Drain. Its function: an N‑channel, high‑voltage enhancement‑mode power MOSFET intended for high‑voltage switching applications (e.g., power converters, PFC, motor drives).

Manufacturer

Manufacturer: Diodes Incorporated (Diodes Inc.).
What kind of company: Diodes Inc. is a global semiconductor manufacturer that designs and supplies discrete, logic, analog and power-management integrated circuits (including MOSFETs, diodes, rectifiers and related components) for consumer, computing, communications and industrial markets.

Application

DMN10H120SE-13 is a high‑voltage N‑channel enhancement MOSFET (120V class). Applications include:
- Switching regulators and DC‑DC converters (SMPS)
- High/low‑side switching in power supplies
- Motor control and drives (BLDC, stepper)
- Automotive power management and load switches
- Solar inverters and UPS power paths
- General high‑voltage switching in industrial/consumer electronics

Equivalent

I don’t have external lookup access. Please provide the DMN10H120SE-13 datasheet or its key specs (VDS, ID, RDS(on) at gate voltage, package, switching speed, and application). With those I can list close equivalents (e.g. same VDS/ID/RDS(on) N‑channel MOSFETs from Infineon, ST, Vishay, ON Semiconductor) concisely.