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CY14V101LA-BA45XIT
IC NVSRAM 1MBIT PARALLEL 48FBGA
- メーカー
- Mfr。パート #CY14V101LA-BA45XIT
- パッケージ
- データシート
- 在庫中156
100% オリジナル &新しい
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365日の保証
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仕様
| Part Status | Active |
| DigiKey Programmable | Not Verified |
| Memory Type | Non-Volatile |
| Memory Format | NVSRAM |
| Technology | NVSRAM (Non-Volatile SRAM) |
| Memory Size | 1Mbit |
| Memory Organization | 128K x 8 |
| Memory Interface | Parallel |
| Write Cycle Time - Word, Page | 45ns |
| Voltage - Supply | 2.7V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 48-TFBGA |
| Supplier Device Package | 48-FBGA (6x10) |
| Base Product Number | CY14V101 |
| Access Time | 45 ns |
概要
Description
The CY14V101LA-BA45XIT is a 1 megabit (128KB) Serial NOR Flash memory chip manufactured by Cypress Semiconductor, now part of Infineon Technologies. This device features a high-performance SPI (Serial Peripheral Interface), enabling fast read and write operations. It operates at a voltage range of 2.7V to 3.6V and supports a wide temperature range, making it suitable for various applications, including consumer electronics, automotive systems, and industrial designs.
Key features include:
- 1Mbit density with 128KB of storage.
- Supports dual and quad SPI modes for increased data transfer rates.
- Fast read speeds of up to 104 MHz.
- Enhanced endurance with over 100,000 program/erase cycles.
- Data retention of up to 20 years.
This component is ideal for applications that require reliable data storage and quick access in compact form factors. Its low power consumption and durability make it a preferred choice for embedded systems.
Key features include:
- 1Mbit density with 128KB of storage.
- Supports dual and quad SPI modes for increased data transfer rates.
- Fast read speeds of up to 104 MHz.
- Enhanced endurance with over 100,000 program/erase cycles.
- Data retention of up to 20 years.
This component is ideal for applications that require reliable data storage and quick access in compact form factors. Its low power consumption and durability make it a preferred choice for embedded systems.
Features
The CY14V101LA-BA45XIT is a non-volatile Ferroelectric Random Access Memory (FRAM) device. Here are its key features:
1. Memory Configuration: 1 Megabit (128 K x 8 bits) FRAM.
2. Voltage Range: Operates within a supply voltage range of 2.7V to 3.6V.
3. Data Retention: Offers long data retention, typically up to 10 years at 85°C.
4. Write Endurance: Supports high endurance with over 10 trillion read/write cycles.
5. Speed: Access time is typically around 45 ns, facilitating fast read and write operations.
6. Interface: Utilizes a standard SPI (Serial Peripheral Interface) for easy integration into various applications.
7. Low Power Consumption: Consumes low power during operation, making it suitable for battery-operated devices.
8. Package Type: Available in a compact 8-pin SOIC package.
These features make the CY14V101LA-BA45XIT ideal for applications requiring high-speed, reliable, and long-lasting memory solutions, such as in automotive, industrial, and consumer electronics.
1. Memory Configuration: 1 Megabit (128 K x 8 bits) FRAM.
2. Voltage Range: Operates within a supply voltage range of 2.7V to 3.6V.
3. Data Retention: Offers long data retention, typically up to 10 years at 85°C.
4. Write Endurance: Supports high endurance with over 10 trillion read/write cycles.
5. Speed: Access time is typically around 45 ns, facilitating fast read and write operations.
6. Interface: Utilizes a standard SPI (Serial Peripheral Interface) for easy integration into various applications.
7. Low Power Consumption: Consumes low power during operation, making it suitable for battery-operated devices.
8. Package Type: Available in a compact 8-pin SOIC package.
These features make the CY14V101LA-BA45XIT ideal for applications requiring high-speed, reliable, and long-lasting memory solutions, such as in automotive, industrial, and consumer electronics.
Package
The CY14V101LA-BA45XIT is packaged in a 45-ball BGA (Ball Grid Array) format. This type of packaging allows for a compact design and efficient thermal performance, suitable for applications requiring high-density mounting.
Pinout
The CY14V101LA-BA45XIT is a 1 Megabit (128 K × 8) serial NOR Flash memory device from Cypress Semiconductor. It features a pin count of 8.
Pin Functions:
1. VCC: Power supply pin.
2. GND: Ground pin.
3. SCK: Serial clock input for synchronization.
4. CS#: Chip select pin, active low.
5. MOSI: Master Out Slave In for data input.
6. MISO: Master In Slave Out for data output.
7. WP#: Write protect pin, active low to enable write protection.
8. HOLD#: Hold pin to pause serial communication, active low.
This device supports SPI (Serial Peripheral Interface) for data transfer and is suitable for a variety of applications requiring non-volatile memory.
Pin Functions:
1. VCC: Power supply pin.
2. GND: Ground pin.
3. SCK: Serial clock input for synchronization.
4. CS#: Chip select pin, active low.
5. MOSI: Master Out Slave In for data input.
6. MISO: Master In Slave Out for data output.
7. WP#: Write protect pin, active low to enable write protection.
8. HOLD#: Hold pin to pause serial communication, active low.
This device supports SPI (Serial Peripheral Interface) for data transfer and is suitable for a variety of applications requiring non-volatile memory.
Manufacturer
The CY14V101LA-BA45XIT is manufactured by Cypress Semiconductor Corporation, which is a subsidiary of Infineon Technologies AG. Cypress is known for its advanced integrated circuits, particularly in the areas of memory, microcontrollers, and connectivity solutions. The company specializes in providing semiconductor solutions for various applications, including automotive, industrial, consumer electronics, and IoT devices. Cypress is recognized for its innovative products, such as flash memory and programmable system-on-chip (PSoC) technology, which are widely used in both commercial and industrial markets.
Application
The CY14V101LA-BA45XIT is a 1 Megabit (128K x 8) non-volatile static RAM (nvSRAM) that combines SRAM memory with a non-volatile flash memory element. Its application areas include automotive systems, industrial automation, telecommunications, medical devices, and consumer electronics, particularly where fast data storage and retrieval, along with data retention during power loss, are critical. It is suitable for applications requiring high reliability and quick access to stored data.
Equivalent
The CY14V101LA-BA45XIT is a 1 Megabit (128K x 8) Serial NOR Flash memory. Equivalent products include:
1. W25Q128JV (Winbond)
2. M25P128-V (STMicroelectronics)
3. S25FL128S (Cypress/Infineon)
4. AT25DF128A (Microchip/Atmel)
These alternatives may vary in specifications like voltage, speed, and interface, so ensure compatibility for your application.
1. W25Q128JV (Winbond)
2. M25P128-V (STMicroelectronics)
3. S25FL128S (Cypress/Infineon)
4. AT25DF128A (Microchip/Atmel)
These alternatives may vary in specifications like voltage, speed, and interface, so ensure compatibility for your application.
出荷
出荷方法私たち
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出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
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