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CSD25401Q3
MOSFET P-CH 20V 14A/60A 8VSON
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- Mfr。パート #CSD25401Q3
- パッケージ
- データシート CSD25401Q3 DataSheet
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仕様
| Series | NexFET™ |
| Part Status | Obsolete |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20 V |
| Current - Continuous Drain (Id) @ 25°C | 14A (Ta), 60A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Rds On (Max) @ Id, Vgs | 11.7mOhm @ 10A, 4.5V |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 12.3 nC @ 4.5 V |
| Vgs (Max) | ±12V |
| Input Capacitance (Ciss) (Max) @ Vds | 1400 pF @ 10 V |
| Power Dissipation (Max) | 2.8W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-VSON-CLIP (3.3x3.3) |
| Package / Case | 8-PowerTDFN |
| Base Product Number | CSD2540 |
概要
Description
CSD25401Q3 appears to be a course code, likely from a specific institution or program, but without specific context or widely available details, it's challenging to provide an exact introduction. Generally, course codes like CSD25401Q3 could be associated with a subject in computer science, data science, or a related field, depending on the institution's cataloging system.
To understand the course content, you would typically refer to the syllabus or course description provided by the educational institution. This would outline the objectives, topics covered, prerequisites, and learning outcomes. The course could involve lectures, practical assignments, projects, or exams designed to enhance understanding of the subject matter.
For a precise introduction, consulting the institution’s course catalog or contacting the academic department directly would be advisable. They can provide detailed information including the course scope, instructional methods, and evaluation criteria.
To understand the course content, you would typically refer to the syllabus or course description provided by the educational institution. This would outline the objectives, topics covered, prerequisites, and learning outcomes. The course could involve lectures, practical assignments, projects, or exams designed to enhance understanding of the subject matter.
For a precise introduction, consulting the institution’s course catalog or contacting the academic department directly would be advisable. They can provide detailed information including the course scope, instructional methods, and evaluation criteria.
Features
The CSD25401Q3 is a power MOSFET designed by Texas Instruments, featuring characteristics suitable for efficient switching applications. Key features include:
1. N-Channel MOSFET: This device is an N-channel type, which typically offers faster switching and lower on-resistance than P-channel counterparts.
2. Low On-Resistance: The MOSFET exhibits very low on-resistance, enhancing efficiency by reducing power losses during conduction.
3. Small Package: It comes in a compact SON 2x2 mm package, allowing for space-saving designs, ideal for applications with limited board space.
4. High Current Handling: The CSD25401Q3 is capable of handling relatively high currents, making it suitable for power supply and load-switching applications.
5. Thermal Performance: Features excellent thermal performance, aiding in heat dissipation and ensuring reliable operation over a range of temperatures.
6. Fast Switching: Optimized for fast switching speeds, which is crucial for high-frequency applications and helps in reducing switching losses.
These features make the CSD25401Q3 MOSFET suitable for use in power management systems, DC-DC converters, and other applications requiring efficient and compact switching solutions.
1. N-Channel MOSFET: This device is an N-channel type, which typically offers faster switching and lower on-resistance than P-channel counterparts.
2. Low On-Resistance: The MOSFET exhibits very low on-resistance, enhancing efficiency by reducing power losses during conduction.
3. Small Package: It comes in a compact SON 2x2 mm package, allowing for space-saving designs, ideal for applications with limited board space.
4. High Current Handling: The CSD25401Q3 is capable of handling relatively high currents, making it suitable for power supply and load-switching applications.
5. Thermal Performance: Features excellent thermal performance, aiding in heat dissipation and ensuring reliable operation over a range of temperatures.
6. Fast Switching: Optimized for fast switching speeds, which is crucial for high-frequency applications and helps in reducing switching losses.
These features make the CSD25401Q3 MOSFET suitable for use in power management systems, DC-DC converters, and other applications requiring efficient and compact switching solutions.
Package
The CSD25401Q3 is a power MOSFET that comes in a compact, surface-mount Q3 package. This package type is designed for efficient thermal performance and space-saving on printed circuit boards, making it suitable for high-density and compact electronic designs, such as power management applications.
Pinout
The CSD25401Q3 is a N-channel MOSFET from Texas Instruments. It comes in a small, 3.3 mm x 3.3 mm SON (Small Outline No-lead) package. This MOSFET is designed for use in applications requiring efficient power management, such as in DC-DC converters or load switching.
The CSD25401Q3 has a total of 8 pins. The pin configuration is typically as follows:
1. Source (S): Connected to the source of the MOSFET.
2. Gate (G): Connected to the gate of the MOSFET, used to control the MOSFET.
3. Drain (D): Connected to the drain of the MOSFET.
The rest of the pins are usually internally connected to facilitate better thermal and electrical performance. The MOSFET is used for its low on-resistance and high efficiency, making it suitable for a variety of power control and conversion tasks.
The CSD25401Q3 has a total of 8 pins. The pin configuration is typically as follows:
1. Source (S): Connected to the source of the MOSFET.
2. Gate (G): Connected to the gate of the MOSFET, used to control the MOSFET.
3. Drain (D): Connected to the drain of the MOSFET.
The rest of the pins are usually internally connected to facilitate better thermal and electrical performance. The MOSFET is used for its low on-resistance and high efficiency, making it suitable for a variety of power control and conversion tasks.
Manufacturer
The CSD25401Q3 is manufactured by Texas Instruments. Texas Instruments, commonly known as TI, is an American technology company that designs and manufactures semiconductors and various integrated circuits. It is one of the largest semiconductor companies in the world and focuses on developing products for various applications, including consumer electronics, automotive, industrial, and communications equipment. TI is renowned for its innovation in analog technology, embedded processors, and digital light processing (DLP) technology. The company is also known for its significant contributions to the education sector through its development of graphing calculators and educational technologies.
Application
The CSD25401Q3 is a P-channel MOSFET used primarily in power management applications. It is suitable for load switching, DC-DC conversion, and battery protection circuits. Its small form factor makes it ideal for portable devices. Additionally, it is used in low-voltage applications, motor control, and power supply circuits due to its low on-resistance and efficient switching capabilities.
Equivalent
The CSD25401Q3 is a P-channel MOSFET from Texas Instruments. Equivalent products can include other P-channel MOSFETs with similar voltage, current ratings, and package type. Some potential equivalents from other manufacturers might include the Fairchild FDS5672, Vishay Si2323DS, or the ON Semiconductor NTLJD1155P. Always verify the electrical characteristics and package compatibility with your specific application requirements.
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