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CSD19538Q3AT
MOSFET N-CH 100V 15A 8VSON
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- Mfr。パート #CSD19538Q3AT
- パッケージ
- データシート CSD19538Q3AT DataSheet
- 在庫中2025
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仕様
| Supplier | Texas Instruments |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | NexFET™ |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 100 V |
| Current-ContinuousDrain(Id)@25°C | 15A (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 6V, 10V |
| RdsOn(Max)@IdVgs | 59mOhm @ 5A, 10V |
| Vgs(th)(Max)@Id | 3.8V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 4.3 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 454 pF @ 50 V |
| PowerDissipation(Max) | 2.8W (Ta), 23W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | 8-VSONP (3x3.3) |
概要
Description
CSD19538Q3AT is an automotive‑qualified N‑channel MOSFET from TI’s CSD family. It’s intended for high‑efficiency switching in automotive power‑electronics such as DC–DC converters, motor drives, and load switches. Key characteristics typically include low on‑resistance (Rds(on)), a suitable Vds rating for automotive environments, fast switching performance, and protective features (overcurrent, overtemperature, undervoltage) in a compact package (often with an exposed pad). The “Q3” designation indicates automotive qualification. For exact electrical ratings (Vds, Id, Rds(on)), package type, thermal data, and protection specifics, refer to the latest TI datasheet and product page.
Features
CSD19538Q3AT features (summary):
- N-channel NexFET power MOSFET, 30 V rating
- Automotive-grade device (AEC-qualified) for harsh automotive environments
- Very low on-resistance (Rds(on)) for high-efficiency switching
- Low gate drive requirements with reduced gate charge (Qgs/Qgd) for smaller drive circuitry
- High pulsed drain current capability and rugged transient/driver-diode performance
- Robust device for automotive transients and energy handling (avalanche/diode performance)
- Thermally enhanced package with exposed pad for better heat dissipation
- Pb-free, RoHS compliant; suitable for surface-mount implementations
- Ideal for DC-DC converters, synchronous buck/boost, motor control, and other automotive power-switching applications
Note: exact electrical specs (Rds(on), Qgs, package type, temp range) are in the datasheet.
- N-channel NexFET power MOSFET, 30 V rating
- Automotive-grade device (AEC-qualified) for harsh automotive environments
- Very low on-resistance (Rds(on)) for high-efficiency switching
- Low gate drive requirements with reduced gate charge (Qgs/Qgd) for smaller drive circuitry
- High pulsed drain current capability and rugged transient/driver-diode performance
- Robust device for automotive transients and energy handling (avalanche/diode performance)
- Thermally enhanced package with exposed pad for better heat dissipation
- Pb-free, RoHS compliant; suitable for surface-mount implementations
- Ideal for DC-DC converters, synchronous buck/boost, motor control, and other automotive power-switching applications
Note: exact electrical specs (Rds(on), Qgs, package type, temp range) are in the datasheet.
Package
I can’t verify CSD19538Q3AT right now because I don’t have web access to check the TI datasheet. The “T” typically denotes tape-and-reel; the CSD195xx Q3A family commonly comes in a small SON/WSON (PowerPAD) package. Please confirm with TI’s official datasheet for the exact package and dimensions.
Pinout
CSD19538Q3AT is a 3-terminal N‑channel enhancement‑mode power MOSFET (pins: Gate, Drain, Source) with an exposed/thermal drain pad on the package. Function: low‑RDS(on) power switch for switching and synchronous‑rectifier applications (used as high‑ or low‑side FET depending on circuit).
Manufacturer
Manufacturer: Texas Instruments (TI).
TI is a multinational semiconductor company that designs and manufactures analog, mixed-signal and embedded processors, power-management devices (including MOSFETs and other discrete power products), and related integrated circuits for industrial, automotive, consumer and communications markets.
TI is a multinational semiconductor company that designs and manufactures analog, mixed-signal and embedded processors, power-management devices (including MOSFETs and other discrete power products), and related integrated circuits for industrial, automotive, consumer and communications markets.
Application
Typical applications for CSD19538Q3AT:
- Automotive power management: high-side/low-side load switches in 12V systems
- DC–DC converters: main switching FETs in buck/boost regulators
- Motor/actuator drives: pumps, fans, small DC motors
- Power distribution and protection in infotainment, lighting, and body electronics
- General high-speed switching in portable/industrial power supplies
- Automotive power management: high-side/low-side load switches in 12V systems
- DC–DC converters: main switching FETs in buck/boost regulators
- Motor/actuator drives: pumps, fans, small DC motors
- Power distribution and protection in infotainment, lighting, and body electronics
- General high-speed switching in portable/industrial power supplies
Equivalent
I don’t have live web access to fetch exact cross‑references. Give me the CSD19538Q3AT’s key specs (VDS, RDS(on) at gate voltage, package, ID, and switching charge) or allow me to look it up, and I’ll list compatible equivalents (TI siblings and third‑party MOSFETs) concisely.
出荷
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出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
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