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CSD19536KTT
MOSFET N-CH 100V 200A DDPAK
- メーカー
- Mfr。パート #CSD19536KTT
- パッケージ D2PAK-3 (TO-263-3)
- データシート
- 在庫中6633
100% オリジナル &新しい
出荷の準備ができている24時間
365日の保証
RFQおよびもっと割引を得る
仕様
| Package | Tape & Reel (TR),Cut Tape (CT),Bulk |
| Series | NexFET™ |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 100 V |
| Current-ContinuousDrain(Id)@25°C | 200A (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 6V, 10V |
| RdsOn(Max)@IdVgs | 2.4mOhm @ 100A, 10V |
| Vgs(th)(Max)@Id | 3.2V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 153 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 12000 pF @ 50 V |
| PowerDissipation(Max) | 375W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | DDPAK/TO-263-3 |
概要
Description
CSD19536KTT refers to a specific course or program, likely related to a field such as computer science, software development, or a similar area. The course code typically indicates its level and content focus within an academic curriculum.
An introduction to CSD19536KTT would generally cover foundational concepts relevant to the subject, including key theories, methodologies, and practical applications. Students might engage in hands-on projects, collaborative learning, and theoretical discussions to build a comprehensive understanding of the material.
The course could also explore industry trends, tools, and technologies pertinent to the subject matter, preparing students for further study or careers in the field. Assessment methods may include examinations, assignments, and group projects to evaluate understanding and skills development.
For specific details, including prerequisites, content outline, and learning outcomes, it is recommended to consult the official course syllabus or academic institution offering the program.
An introduction to CSD19536KTT would generally cover foundational concepts relevant to the subject, including key theories, methodologies, and practical applications. Students might engage in hands-on projects, collaborative learning, and theoretical discussions to build a comprehensive understanding of the material.
The course could also explore industry trends, tools, and technologies pertinent to the subject matter, preparing students for further study or careers in the field. Assessment methods may include examinations, assignments, and group projects to evaluate understanding and skills development.
For specific details, including prerequisites, content outline, and learning outcomes, it is recommended to consult the official course syllabus or academic institution offering the program.
Features
The CSD19536KTT is a high-performance N-channel MOSFET designed for applications requiring efficient power management. Key features include:
1. Low On-Resistance (Rds(on)): It offers low on-resistance, minimizing conduction losses and improving overall efficiency.
2. High Voltage Rating: Supports a voltage rating of up to 40V, making it suitable for various power applications.
3. Fast Switching: Optimized for high-speed switching, which enhances performance in power converters and motor drivers.
4. Thermal Performance: Excellent thermal characteristics allow for effective heat dissipation, ensuring reliability under load.
5. Compact Package: Housed in a compact DPAK package, it facilitates space-saving designs.
The CSD19536KTT is ideal for use in DC-DC converters, battery management systems, and other power applications where efficiency and thermal management are critical.
1. Low On-Resistance (Rds(on)): It offers low on-resistance, minimizing conduction losses and improving overall efficiency.
2. High Voltage Rating: Supports a voltage rating of up to 40V, making it suitable for various power applications.
3. Fast Switching: Optimized for high-speed switching, which enhances performance in power converters and motor drivers.
4. Thermal Performance: Excellent thermal characteristics allow for effective heat dissipation, ensuring reliability under load.
5. Compact Package: Housed in a compact DPAK package, it facilitates space-saving designs.
The CSD19536KTT is ideal for use in DC-DC converters, battery management systems, and other power applications where efficiency and thermal management are critical.
Package
The CSD19536KTT is packaged in a VQFN (Very Thin Quad Flat No-lead) package type. It is designed for efficient thermal performance and compact size, suitable for various applications in power management and switching.
Pinout
The CSD19536KTT is a N-channel MOSFET from Texas Instruments. It features a total of 5 pins. The pin functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate terminal allows the device to turn ON or OFF.
2. Drain (D): This pin connects to the load. Current flows from the drain when the MOSFET is in the ON state.
3. Source (S): This pin is connected to the ground or the negative side of the power supply. It serves as the return path for the current flowing through the load.
The CSD19536KTT is designed for high-performance applications, including power management and DC-DC converters, with a maximum drain-source voltage of 30V and a continuous drain current rating of 35A. Its low on-resistance enhances efficiency in power applications.
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate terminal allows the device to turn ON or OFF.
2. Drain (D): This pin connects to the load. Current flows from the drain when the MOSFET is in the ON state.
3. Source (S): This pin is connected to the ground or the negative side of the power supply. It serves as the return path for the current flowing through the load.
The CSD19536KTT is designed for high-performance applications, including power management and DC-DC converters, with a maximum drain-source voltage of 30V and a continuous drain current rating of 35A. Its low on-resistance enhances efficiency in power applications.
Manufacturer
The CSD19536KTT is manufactured by Texas Instruments (TI). Texas Instruments is a global semiconductor company that designs and manufactures a wide variety of electronic components, including integrated circuits, microcontrollers, and analog chips. Founded in 1930, TI is known for its innovations in digital signal processing and analog technologies. The company serves various markets, including automotive, industrial, personal electronics, and communications, providing solutions that enhance functionality, performance, and efficiency in electronic devices. Texas Instruments is recognized for its commitment to research and development, making it a key player in the semiconductor industry.
Application
The CSD19536KTT is a high-performance power MOSFET primarily used in applications like DC-DC converters, power management systems, and motor drives. Its low R_DS(on) and fast switching capabilities make it suitable for use in renewable energy systems, electric vehicles, and consumer electronics. Additionally, it is utilized in power supplies, battery management systems, and industrial automation for efficient energy conversion and control.
Equivalent
The CSD19536KTT is a N-channel MOSFET typically used in power management applications. Equivalent products include the IRF3205, FSDM056N06, and BSC025N06LS. Always verify specifications such as voltage, current ratings, and RDS(on) to ensure compatibility for your specific application.
出荷
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出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
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