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CSD19534Q5A
MOSFET N-CH 100V 50A 8VSON
- メーカー
- Mfr。パート #CSD19534Q5A
- パッケージ VSONP-8
- データシート
- 在庫中4944
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仕様
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | NexFET™ |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 100 V |
| Current-ContinuousDrain(Id)@25°C | 50A (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 6V, 10V |
| RdsOn(Max)@IdVgs | 15.1mOhm @ 10A, 10V |
| Vgs(th)(Max)@Id | 3.4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 22 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 1680 pF @ 50 V |
| PowerDissipation(Max) | 3.2W (Ta), 63W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | 8-VSONP (5x6) |
概要
Description
CSD19534Q5A is a high-performance, low-loss, N-channel MOSFET designed for a variety of applications, including power management and conversion systems. It features a low on-resistance (RDS(on)), enabling efficient switching performance and reducing power dissipation in circuits. With a maximum drain-source voltage rating, it can handle substantial loads, making it suitable for applications in automotive, industrial, and consumer electronics. Its fast switching capabilities contribute to improved efficiency in power supply designs. The package type and thermal characteristics are optimized for enhanced thermal performance, ensuring reliable operation under demanding conditions. This MOSFET is ideal for engineers seeking a robust solution for efficient power handling in compact designs.
Features
The CSD19534Q5A is a high-performance power MOSFET designed for various applications, particularly in power management and conversion systems. Key features include:
1. Type: N-channel MOSFET.
2. VDS (Drain-Source Voltage): 40V, suitable for medium voltage applications.
3. RDS(on) (Drain-Source On-Resistance): Low on-resistance (typically around 5.5 mΩ at VGS = 10V), enhancing efficiency and reducing heat generation.
4. Continuous Drain Current (ID): Can handle high current levels, typically around 120A, allowing it to be used in high-power applications.
5. Thermal Performance: Robust thermal characteristics, with a low thermal resistance, ensuring reliable operation under load.
6. Package: Offered in a compact, thermally enhanced 5x6 mm QFN package, beneficial for space-constrained designs.
7. Fast Switching Speed: Enables high-frequency operation, making it suitable for applications like DC-DC converters and motor drives.
These features make the CSD19534Q5A ideal for power supply designs, electric vehicles, and renewable energy systems.
1. Type: N-channel MOSFET.
2. VDS (Drain-Source Voltage): 40V, suitable for medium voltage applications.
3. RDS(on) (Drain-Source On-Resistance): Low on-resistance (typically around 5.5 mΩ at VGS = 10V), enhancing efficiency and reducing heat generation.
4. Continuous Drain Current (ID): Can handle high current levels, typically around 120A, allowing it to be used in high-power applications.
5. Thermal Performance: Robust thermal characteristics, with a low thermal resistance, ensuring reliable operation under load.
6. Package: Offered in a compact, thermally enhanced 5x6 mm QFN package, beneficial for space-constrained designs.
7. Fast Switching Speed: Enables high-frequency operation, making it suitable for applications like DC-DC converters and motor drives.
These features make the CSD19534Q5A ideal for power supply designs, electric vehicles, and renewable energy systems.
Package
The CSD19534Q5A is packaged in a QFN (Quad Flat No-lead) format, specifically a 5 mm x 6 mm package. This type of packaging provides a compact design and excellent thermal performance, making it suitable for power management applications.
Pinout
The CSD19534Q5A is a Power MOSFET from Texas Instruments, specifically a N-channel device. It has a total of 5 pins. The pin configuration and their functions are as follows:
1. Gate (G) - This pin is used to control the MOSFET's switching operation by applying voltage.
2. Drain (D) - The drain pin is where the current enters the MOSFET from the load.
3. Source (S) - The source pin is where the current exits the MOSFET to the ground or return path.
The other two pins are typically used for better thermal management or mechanical mounting.
This device is commonly used in power management applications, including synchronous rectification and DC-DC converters, due to its low on-resistance and fast switching capabilities.
1. Gate (G) - This pin is used to control the MOSFET's switching operation by applying voltage.
2. Drain (D) - The drain pin is where the current enters the MOSFET from the load.
3. Source (S) - The source pin is where the current exits the MOSFET to the ground or return path.
The other two pins are typically used for better thermal management or mechanical mounting.
This device is commonly used in power management applications, including synchronous rectification and DC-DC converters, due to its low on-resistance and fast switching capabilities.
Manufacturer
The CSD19534Q5A is manufactured by Texas Instruments (TI), a leading global semiconductor company. Founded in 1930, Texas Instruments is headquartered in Dallas, Texas. The company designs and manufactures a wide range of semiconductor solutions, including analog, embedded processing, and digital signal processing technologies. TI serves various markets such as automotive, industrial, communications, consumer electronics, and computing, providing innovative solutions for diverse applications. The CSD19534Q5A itself is a power MOSFET, commonly used in power management and conversion systems due to its efficiency and performance characteristics. Texas Instruments is renowned for its commitment to quality, reliability, and technological advancement in the semiconductor industry.
Application
The CSD19534Q5A is a high-performance power MOSFET primarily used in applications such as DC-DC converters, power management systems, and motor drives. Its low on-resistance and fast switching capabilities make it suitable for use in automotive, industrial, and consumer electronics, particularly in applications requiring efficient power conversion and thermal management.
Equivalent
The CSD19534Q5A is a N-channel MOSFET with specific characteristics. Equivalent products can include the CSD19533Q5A, CSD19535Q5A, and similar MOSFETs from other manufacturers like the IRF series from Infineon and the BSS series from ON Semiconductor, depending on the voltage and current ratings. Always check datasheets for exact specifications and suitability for your application.
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出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
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