CSD19532KTT

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CSD19532KTT

MOSFET N-CH 100V 200A DDPAK

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仕様

Series NexFET™
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 200A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 5.6mOhm @ 90A, 10V
Vgs(th) (Max) @ Id 3.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 57 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 5060 pF @ 50 V
Power Dissipation (Max) 250W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-263 (DDPAK-3)
Package / Case TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
Base Product Number CSD19532

概要

Description

CSD19532KTT appears to be a code or identifier that doesn't correspond to any widely recognized course, standard, or topic. It could potentially represent a specific course code at a particular educational institution, a unique reference number for a software or hardware product, or an internal designation for a project or document. To provide an accurate introduction, more context or details are needed about what CSD19532KTT specifically refers to. If it is related to a course, the institution offering it might provide details such as the syllabus, learning objectives, or topics covered. For a product or project, the associated company or organization might have documentation or descriptions outlining its purpose and features. For precise information, check the source that mentions this code.

Features

The CSD19532KTT is a power MOSFET from Texas Instruments. It is designed for high-efficiency switching applications. Here are some of its key features:
1. N-Channel MOSFET: It is an N-channel enhancement-mode MOSFET.
2. Voltage and Current Ratings: It typically has a high drain-source voltage rating and is capable of handling substantial currents, suitable for various power applications.
3. Low On-Resistance: The MOSFET offers very low on-resistance, which reduces conduction losses, leading to improved efficiency.
4. High-Speed Switching: It supports high-speed switching, which is beneficial for efficiency in switching power supplies.
5. Thermal Performance: Designed for good thermal performance to maintain effectiveness under high power conditions.
6. Package Type: Available in a compact package suitable for surface mounting, optimizing board space.
7. Applications: Commonly used in applications like DC-DC converters, synchronous rectification, and power management systems.
These features make the CSD19532KTT suitable for use in high-efficiency, high-power electronic systems. For precise specifications, always refer to the manufacturer's datasheet.

Package

The package type for CSD19532KTT is a TO-220. This type of package is commonly used in power semiconductor devices, providing an efficient way to handle high power and dissipate heat.

Pinout

The CSD19532KTT is a power MOSFET from Texas Instruments. It is housed in a TO-220 package and is primarily used for applications requiring high current and efficiency. The device has three pins:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied here determines whether the device is on or off.

2. Drain (D): This is the pin through which the main current flows when the MOSFET is turned on. It connects to the high voltage side of the circuit.
3. Source (S): This pin is connected to the ground side of the circuit. The current flows out of this pin when the MOSFET is conducting.
The CSD19532KTT is designed for high-efficiency applications, offering low on-resistance and fast switching capabilities, making it suitable for use in power supplies, motor drives, and other power management systems.

Manufacturer

The CSD19532KTT is manufactured by Texas Instruments. Texas Instruments is an American technology company that designs and manufactures semiconductors and various integrated circuits. It is one of the top semiconductor companies in the world, providing components that are used in a wide array of electronics, including consumer electronics, automotive, industrial, and communications equipment. The company is known for its focus on innovation in analog and embedded processing products, offering a broad portfolio of products that help improve performance, reliability, and efficiency across many industries.

Application

The CSD19532KTT is a power MOSFET commonly used in applications requiring efficient switching and power management. Its primary areas of application include DC-DC converters, synchronous rectification in power supplies, motor control, and load switches for consumer electronics and industrial systems. It is valued for its low on-resistance and fast switching capabilities, making it suitable for compact and energy-efficient designs.

Equivalent

The CSD19532KTT is a N-channel MOSFET from Texas Instruments. Equivalent products may include similar N-channel MOSFETs with comparable voltage and current ratings from other manufacturers, such as:
1. IRLB8721PBF from Infineon Technologies
2. NVHL020N120SC1 from ON Semiconductor
3. FDP42AN15A0 from ON Semiconductor
Ensure to check the datasheets for exact specifications to confirm compatibility with your application.

出荷

出荷方法私たち

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出荷料参照（DHL/FedEx）:

DHL の: 配送費は25ドル〜45ドル（0.5kg）の範囲で、推定配送時間は2〜5営業日です。

フェデックス: 配送費は25ドル〜40ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

UPS の: 配送費は25ドル〜45ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

TNT社: 配送費は25ドル〜65ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

EMS: 配送料金は30〜50ドル（0.5kg）の範囲で、推定配送時間は7〜15営業日です。

登録航空郵便: 配送費は2〜4ドル（0.1kg）で、推定配送時間は5〜20営業日です。

支払い

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