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CSD19531Q5A
MOSFET N-CH 100V 100A 8VSON
- メーカー
- Mfr。パート #CSD19531Q5A
- パッケージ VSONP-8
- データシート
- 在庫中6751
100% オリジナル &新しい
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365日の保証
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仕様
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | NexFET™ |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 100 V |
| Current-ContinuousDrain(Id)@25°C | 100A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 6V, 10V |
| RdsOn(Max)@IdVgs | 6.4mOhm @ 16A, 10V |
| Vgs(th)(Max)@Id | 3.3V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 48 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 3870 pF @ 50 V |
| PowerDissipation(Max) | 3.3W (Ta), 125W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | 8-VSONP (5x6) |
概要
Description
CSD19531Q5A is a high-performance N-channel MOSFET designed for applications requiring efficient power management, such as in DC-DC converters and motor drives. It features a low on-resistance (R_DS(on)), which minimizes conduction losses, enhancing overall system efficiency. With a maximum V_DS rating of 30V and a continuous current rating of 60A, this MOSFET is suitable for a wide range of power applications.
The device is packaged in a compact, thermally efficient SOIC-8 (Surface-Mount) package, facilitating easier integration into circuit boards. It also supports fast switching speeds, making it ideal for high-frequency operation. The CSD19531Q5A offers robust thermal performance with a proper heatsinking solution, ensuring reliable operation under demanding conditions.
Designed for both automotive and industrial applications, it contributes to energy savings and reduced thermal management challenges. Overall, the CSD19531Q5A exemplifies modern MOSFET technology for efficient power conversion and control.
The device is packaged in a compact, thermally efficient SOIC-8 (Surface-Mount) package, facilitating easier integration into circuit boards. It also supports fast switching speeds, making it ideal for high-frequency operation. The CSD19531Q5A offers robust thermal performance with a proper heatsinking solution, ensuring reliable operation under demanding conditions.
Designed for both automotive and industrial applications, it contributes to energy savings and reduced thermal management challenges. Overall, the CSD19531Q5A exemplifies modern MOSFET technology for efficient power conversion and control.
Features
The CSD19531Q5A is a N-channel MOSFET designed for high-efficiency power applications. Key features include:
1. Low On-Resistance: It has a low R_DS(on), which minimizes conduction losses, enhancing overall efficiency.
2. High Voltage Rating: Supports a maximum drain-source voltage (V_DS) of 30V, making it suitable for various applications.
3. Large Current Handling: With a continuous drain current rating of up to 100A, it can handle significant loads.
4. Fast Switching Speed: Optimized for fast switching, reducing transition losses and improving performance in high-frequency applications.
5. Thermal Performance: Designed with a TO-220 package for effective heat dissipation, allowing for higher reliability and performance under thermal stress.
6. Low Gate Charge: A low total gate charge (Q_g) facilitates easier drive requirements, making it suitable for applications like DC-DC converters and motor drives.
These attributes make the CSD19531Q5A ideal for use in power management systems, automotive applications, and other high-performance environments.
1. Low On-Resistance: It has a low R_DS(on), which minimizes conduction losses, enhancing overall efficiency.
2. High Voltage Rating: Supports a maximum drain-source voltage (V_DS) of 30V, making it suitable for various applications.
3. Large Current Handling: With a continuous drain current rating of up to 100A, it can handle significant loads.
4. Fast Switching Speed: Optimized for fast switching, reducing transition losses and improving performance in high-frequency applications.
5. Thermal Performance: Designed with a TO-220 package for effective heat dissipation, allowing for higher reliability and performance under thermal stress.
6. Low Gate Charge: A low total gate charge (Q_g) facilitates easier drive requirements, making it suitable for applications like DC-DC converters and motor drives.
These attributes make the CSD19531Q5A ideal for use in power management systems, automotive applications, and other high-performance environments.
Package
The CSD19531Q5A is packaged in a 5mm x 6mm QFN (Quad Flat No-lead) package. This type of package is designed for efficient thermal performance and compact designs, commonly used in power management applications.
Pinout
The CSD19531Q5A is a N-channel MOSFET featuring a total of 5 pins. The pin configuration is as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to this pin turns the device on or off.
2. Drain (D): This pin is connected to the load. The current flows from drain to source when the MOSFET is on.
3. Source (S): This pin is connected to the ground or the lower potential side of the circuit.
The CSD19531Q5A is designed for high-efficiency applications, such as DC-DC converters and power management systems, due to its low R_DS(on) and fast switching capabilities. It is capable of handling high voltages and currents, making it suitable for various power applications.
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to this pin turns the device on or off.
2. Drain (D): This pin is connected to the load. The current flows from drain to source when the MOSFET is on.
3. Source (S): This pin is connected to the ground or the lower potential side of the circuit.
The CSD19531Q5A is designed for high-efficiency applications, such as DC-DC converters and power management systems, due to its low R_DS(on) and fast switching capabilities. It is capable of handling high voltages and currents, making it suitable for various power applications.
Manufacturer
The CSD19531Q5A is manufactured by Texas Instruments (TI), a prominent American technology company. Texas Instruments is known for designing and producing a wide range of semiconductor and integrated circuit products, primarily for use in electronics. The company specializes in analog and embedded processing solutions, serving various industries such as automotive, industrial, communications, and consumer electronics. TI is recognized for its innovation in power management, signal processing, and microcontroller technologies, making it a key player in the global electronics market.
Application
The CSD19531Q5A is a N-channel MOSFET primarily used in DC-DC converters, power management systems, and synchronous rectification applications. Its high efficiency, low RDS(on), and fast switching capabilities make it suitable for use in power supplies, electric vehicles, renewable energy systems, and industrial automation.
Equivalent
The CSD19531Q5A is a N-channel MOSFET commonly used in power applications. Equivalent products include the IRF3205, FDD844N, and BTS50030-1TR. Always check the specifications like voltage, current ratings, and packaging to ensure compatibility for your specific application.
出荷
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出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
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