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CSD18532Q5B
MOSFET N-CH 60V 100A 8VSON
- メーカー
- Mfr。パート #CSD18532Q5B
- パッケージ PowerTDFN-8
- データシート
- 在庫中4806
100% オリジナル &新しい
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仕様
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | NexFET™ |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 60 V |
| Current-ContinuousDrain(Id)@25°C | 100A (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 4.5V, 10V |
| RdsOn(Max)@IdVgs | 3.2mOhm @ 25A, 10V |
| Vgs(th)(Max)@Id | 2.2V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 58 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 5070 pF @ 30 V |
| PowerDissipation(Max) | 3.2W (Ta), 156W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | 8-VSONP (5x6) |
概要
Description
CSD18532Q5B is a high-performance power MOSFET (metal-oxide-semiconductor field-effect transistor) designed for use in a variety of applications, including power management, DC-DC converters, and motor control. It features a low on-resistance, enabling efficient power transfer and minimizing heat generation. The device operates at a high voltage rating and offers fast switching capabilities, making it suitable for high-frequency applications.
Key specifications often include a maximum drain-source voltage (Vds), low gate threshold voltage (Vgs), and high current handling capacity. Its compact package design facilitates integration into space-constrained environments.
The CSD18532Q5B is part of a broader trend towards more efficient and compact electronic components, catering to industries such as automotive, consumer electronics, and renewable energy. When selecting this MOSFET, considerations include thermal management and device ratings to ensure optimal performance in specific applications.
Key specifications often include a maximum drain-source voltage (Vds), low gate threshold voltage (Vgs), and high current handling capacity. Its compact package design facilitates integration into space-constrained environments.
The CSD18532Q5B is part of a broader trend towards more efficient and compact electronic components, catering to industries such as automotive, consumer electronics, and renewable energy. When selecting this MOSFET, considerations include thermal management and device ratings to ensure optimal performance in specific applications.
Features
The CSD18532Q5B is a high-performance N-channel MOSFET designed for various power management applications. Key features include:
1. Low RDS(on): Provides efficient performance with minimized conduction losses, enhancing overall system efficiency.
2. High Voltage Rating: Operates at a maximum drain-source voltage (VDS) of 75V, making it suitable for medium voltage applications.
3. High Current Handling: Supports continuous drain current (ID) up to 80A, accommodating demanding load conditions.
4. Fast Switching Speeds: Facilitates quick turn-on and turn-off times, beneficial for high-frequency applications.
5. Thermal Performance: Designed with a robust thermal package, ensuring effective heat dissipation during operation.
6. Power Density: Compact size allows for high power density in circuit designs, saving board space.
This MOSFET is ideal for use in applications like DC-DC converters, motor drives, and other power electronic circuits. Its combination of efficiency, thermal performance, and reliability makes it a versatile choice for engineers.
1. Low RDS(on): Provides efficient performance with minimized conduction losses, enhancing overall system efficiency.
2. High Voltage Rating: Operates at a maximum drain-source voltage (VDS) of 75V, making it suitable for medium voltage applications.
3. High Current Handling: Supports continuous drain current (ID) up to 80A, accommodating demanding load conditions.
4. Fast Switching Speeds: Facilitates quick turn-on and turn-off times, beneficial for high-frequency applications.
5. Thermal Performance: Designed with a robust thermal package, ensuring effective heat dissipation during operation.
6. Power Density: Compact size allows for high power density in circuit designs, saving board space.
This MOSFET is ideal for use in applications like DC-DC converters, motor drives, and other power electronic circuits. Its combination of efficiency, thermal performance, and reliability makes it a versatile choice for engineers.
Package
The CSD18532Q5B is packaged in a 5mm x 6mm QFN (Quad Flat No-lead) format. This package type provides a compact design with excellent thermal performance and electrical characteristics, suitable for power management applications.
Pinout
The CSD18532Q5B is a power MOSFET from Texas Instruments, specifically designed for various power management applications. It features a total of 5 pins.
The functions of the pins are as follows:
1. Gate (G) - This pin controls the MOSFET's switching. A voltage applied here turns the device ON or OFF.
2. Drain (D) - This pin is connected to the output, where the load is driven by the MOSFET. The current flows out of this pin when the device is ON.
3. Source (S) - This pin is connected to the ground or negative side of the power supply, allowing current to flow into the device.
The CSD18532Q5B is notable for its low on-resistance and fast switching capabilities, making it suitable for applications like DC-DC converters and power management systems. Always refer to the specific datasheet for detailed electrical characteristics and absolute maximum ratings.
The functions of the pins are as follows:
1. Gate (G) - This pin controls the MOSFET's switching. A voltage applied here turns the device ON or OFF.
2. Drain (D) - This pin is connected to the output, where the load is driven by the MOSFET. The current flows out of this pin when the device is ON.
3. Source (S) - This pin is connected to the ground or negative side of the power supply, allowing current to flow into the device.
The CSD18532Q5B is notable for its low on-resistance and fast switching capabilities, making it suitable for applications like DC-DC converters and power management systems. Always refer to the specific datasheet for detailed electrical characteristics and absolute maximum ratings.
Manufacturer
The CSD18532Q5B is manufactured by Texas Instruments (TI), a leading global semiconductor company. Founded in 1930, Texas Instruments designs and produces a wide range of electronic components, including analog ICs, embedded processors, and digital signal processors. The company serves various markets, including industrial, automotive, communications, and consumer electronics. TI is well-known for its innovation in semiconductor technology and has a strong emphasis on research and development to address the evolving needs of the electronics industry.
Application
The CSD18532Q5B is a n-channel MOSFET designed for applications such as DC-DC converters, power management systems, and high-efficiency power supplies. It is suitable for use in battery management systems, electric vehicles, and renewable energy systems. Its low on-resistance and fast switching capabilities make it ideal for improving efficiency in various power electronic circuits.
Equivalent
The CSD18532Q5B is a dual N-channel MOSFET. Equivalent products include the BSS123, SI7460, and IRF740, among others. However, it’s important to verify specifications like voltage, current ratings, and RDS(on) for precise applications. Always consult the datasheet for detailed comparisons and ensure compatibility with your circuit requirements.
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出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
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