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CSD17577Q3AT
MOSFET N-CH 30V 35A 8VSON
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- Mfr。パート #CSD17577Q3AT
- パッケージ
- データシート CSD17577Q3AT DataSheet
- 在庫中7259
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仕様
| Supplier | Texas Instruments,Rochester Electronics, LLC |
| Package | Tape & Reel (TR),Cut Tape (CT),Bulk |
| Series | NexFET™ |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 30 V |
| Current-ContinuousDrain(Id)@25°C | 35A (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 4.5V, 10V |
| RdsOn(Max)@IdVgs | 4.8mOhm @ 16A, 10V |
| Vgs(th)(Max)@Id | 1.8V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 35 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 2310 pF @ 15 V |
| PowerDissipation(Max) | 2.8W (Ta), 53W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | 8-VSONP (3x3.3) |
概要
Description
CSD17577Q3AT is a high-performance, N-channel MOSFET designed for a variety of applications, including power management, DC-DC converters, and motor control. It features a low on-resistance (Rds(on)) which minimizes power loss and enhances efficiency. The device supports high-speed switching, making it suitable for applications requiring rapid response times.
This MOSFET typically operates at high voltages, enabling it to handle demanding electrical environments. Its construction allows for thermal efficiency, which is crucial in reducing heat generation during operation. Additionally, the CSD17577Q3AT is packaged in a compact format, allowing for space-saving designs in electronic circuits.
When selecting this MOSFET for a design, consider its maximum ratings, such as gate-source voltage, drain-source voltage, and continuous drain current, to ensure optimal performance and reliability in your specific application.
This MOSFET typically operates at high voltages, enabling it to handle demanding electrical environments. Its construction allows for thermal efficiency, which is crucial in reducing heat generation during operation. Additionally, the CSD17577Q3AT is packaged in a compact format, allowing for space-saving designs in electronic circuits.
When selecting this MOSFET for a design, consider its maximum ratings, such as gate-source voltage, drain-source voltage, and continuous drain current, to ensure optimal performance and reliability in your specific application.
Features
The CSD17577Q3AT is a high-performance power MOSFET designed for efficient switching applications. Key features include:
1. Low RDS(on): Offers minimal on-resistance, which enhances efficiency and reduces heat generation during operation.
2. High Voltage Rating: Operates at a maximum drain-source voltage of 30V, making it suitable for various applications.
3. Fast Switching Speed: Enables quick turn-on and turn-off times, beneficial for high-frequency applications.
4. Compact Package: Housed in a QFN (Quad Flat No-lead) package, which aids in efficient thermal management and PCB space-saving.
5. Robust Thermal Performance: Designed to handle high power levels while maintaining reliable junction temperatures.
6. Low Gate Charge: Reduces the input power required for switching, enhancing overall system efficiency.
7. Ideal for DC-DC Converters: Commonly used in power management systems such as synchronous buck converters and other voltage regulation applications.
These features make the CSD17577Q3AT an excellent choice for modern electronic designs requiring high efficiency and compactness.
1. Low RDS(on): Offers minimal on-resistance, which enhances efficiency and reduces heat generation during operation.
2. High Voltage Rating: Operates at a maximum drain-source voltage of 30V, making it suitable for various applications.
3. Fast Switching Speed: Enables quick turn-on and turn-off times, beneficial for high-frequency applications.
4. Compact Package: Housed in a QFN (Quad Flat No-lead) package, which aids in efficient thermal management and PCB space-saving.
5. Robust Thermal Performance: Designed to handle high power levels while maintaining reliable junction temperatures.
6. Low Gate Charge: Reduces the input power required for switching, enhancing overall system efficiency.
7. Ideal for DC-DC Converters: Commonly used in power management systems such as synchronous buck converters and other voltage regulation applications.
These features make the CSD17577Q3AT an excellent choice for modern electronic designs requiring high efficiency and compactness.
Package
The CSD17577Q3AT is packaged in a 3x3 mm PowerDFN package. This package type is designed for efficient thermal performance and compact surface-mount applications.
Pinout
The CSD17577Q3AT is a N-channel MOSFET from Texas Instruments designed for power management applications. It features a pin count of 8. The primary functions of its pins are as follows:
1. G (Gate): Controls the switching of the MOSFET.
2. D (Drain): The terminal through which current flows out when the MOSFET is on.
3. S (Source): The terminal through which current flows into the MOSFET when on.
4. R (Reverse Drain): Often used for additional functionality in specific configurations.
The other four pins are typically used for thermal and electrical performance parameters, including bulk capacitance and thermal management features. The device is designed for high efficiency in applications like power conversion and load switching. For detailed pin assignments and specific electrical characteristics, it is advisable to refer to the manufacturer's datasheet.
1. G (Gate): Controls the switching of the MOSFET.
2. D (Drain): The terminal through which current flows out when the MOSFET is on.
3. S (Source): The terminal through which current flows into the MOSFET when on.
4. R (Reverse Drain): Often used for additional functionality in specific configurations.
The other four pins are typically used for thermal and electrical performance parameters, including bulk capacitance and thermal management features. The device is designed for high efficiency in applications like power conversion and load switching. For detailed pin assignments and specific electrical characteristics, it is advisable to refer to the manufacturer's datasheet.
Manufacturer
The CSD17577Q3AT is manufactured by Texas Instruments (TI). Texas Instruments is a global semiconductor company headquartered in Dallas, Texas. Founded in 1930, TI is known for designing and manufacturing a wide range of analog and digital semiconductor products, including microcontrollers, processors, sensors, and power management solutions. The company primarily serves various industries such as automotive, industrial, consumer electronics, and communications. Texas Instruments is recognized for its innovation in technology and its commitment to research and development, making it a key player in the semiconductor market.
Application
The CSD17577Q3AT is a high-performance MOSFET used in various applications, including power management, DC-DC converters, and battery management systems. Its low on-resistance and fast switching capabilities make it suitable for use in computing, telecom, and industrial power supplies, as well as electric vehicle systems and renewable energy applications.
Equivalent
The CSD17577Q3AT is a dual N-channel MOSFET. Equivalent products include the IRF3205, AO3400, and BSS138. For precise replacements, consider parameters like voltage, current ratings, and R_DS(on). Always verify specifications to ensure compatibility in your application.
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