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CSD17575Q3

Name: CSD17575Q3
Rating: 4.7 (12 reviews)

MOSFET N-CH 30V 60A 8VSON

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Mfr。パート #CSD17575Q3
パッケージ PowerTDFN-8
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仕様

Package	Tape & Reel (TR),Cut Tape (CT),Bulk
Series	NexFET™
ProductStatus	Active
FETType	N-Channel
Technology	MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)	30 V
Current-ContinuousDrain(Id)@25°C	60A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn)	4.5V, 10V
RdsOn(Max)@IdVgs	2.3mOhm @ 25A, 10V
Vgs(th)(Max)@Id	1.8V @ 250µA
GateCharge(Qg)(Max)@Vgs	30 nC @ 4.5 V
Vgs(Max)	±20V
InputCapacitance(Ciss)(Max)@Vds	4420 pF @ 15 V
PowerDissipation(Max)	2.8W (Ta), 108W (Tc)
OperatingTemperature	-55°C ~ 150°C (TJ)
MountingType	Surface Mount
SupplierDevicePackage	8-VSON-CLIP (3.3x3.3)

概要

Description

CSD17575Q3 is a high-performance power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) from Texas Instruments, designed for efficient switching applications. It features a low on-resistance (R_DS(on)) and fast switching speeds, making it suitable for a variety of power management tasks, including DC-DC converters, motor drives, and power supplies. The device has a maximum drain-source voltage (V_DS) of 75V and is capable of handling high currents, ensuring reliable operation in demanding environments. Its compact package and thermal performance enhance its usability in space-constrained applications. The CSD17575Q3 is typically utilized in automotive, industrial, and consumer electronics applications, where efficiency and reliability are critical.

Features

The CSD17575Q3 is a high-performance Power MOSFET designed for various applications such as DC-DC converters, power management, and motor drives. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (VDS) of 75V, which ensures its suitability for medium-voltage applications.
2. Current Rating: The device supports continuous drain current (ID) of up to 40A, providing robust performance for high-current applications.
3. Low RDS(on): It boasts a low on-resistance (RDS(on)) of around 3.5 mΩ, which helps in reducing conduction losses and improving efficiency.
4. Fast Switching Speed: The MOSFET features fast switching capabilities, enabling high-frequency operations that are essential in modern power electronics.
5. Thermal Performance: Its package design (DPAK) allows for effective heat dissipation, enhancing reliability in thermal management.
6. Gate Threshold Voltage: The gate threshold voltage (VGS(th)) is optimized for low-voltage drive levels, making it compatible with various control circuits.
Overall, the CSD17575Q3 combines efficiency, reliability, and versatility, making it a valuable choice for power applications.

Package

The CSD17575Q3 is a Texas Instruments power MOSFET packaged in a VSON (Very Thin Outline No-lead) package. This package type is characterized by its compact size and thermal efficiency, suitable for applications requiring high power density and performance.

Pinout

The CSD17575Q3 is a N-channel MOSFET with a total of 8 pins. The pin configuration and functions are as follows:
1. Gate (G) - Pin 1: Controls the on/off state of the MOSFET.
2. Drain (D) - Pin 2: The output terminal where the load connects.
3. Source (S) - Pin 3: The input terminal connected to the ground or negative side of the power supply.
4. Source (S) - Pin 4: Another source pin for improved thermal performance.
5. Gate (G) - Pin 5: Another gate pin for redundancy and better control.
6. Drain (D) - Pin 6: Additional drain pin for enhanced current handling.
7. Drain (D) - Pin 7: Further drain connection to optimize performance.
8. Source (S) - Pin 8: Another source pin for further connectivity options.
This configuration enhances the device's performance in high-efficiency applications, such as power management and motor control.

Manufacturer

The CSD17575Q3 is manufactured by Texas Instruments (TI), a leading semiconductor company. Texas Instruments designs and produces analog and embedded processing chips, which are widely used across various industries including automotive, industrial, communications, and consumer electronics. Founded in 1930 and headquartered in Dallas, Texas, TI is renowned for its innovative technologies and extensive product portfolio, which includes microcontrollers, digital signal processors, and power management solutions. The company focuses on providing high-performance solutions that enable efficient and reliable operation in electronic devices.

Application

CSD17575Q3 is a low-resistance, N-channel MOSFET commonly used in applications such as DC-DC converters, power management systems, and motor drives. It is suitable for battery management, high-efficiency power supplies, and industrial automation due to its fast switching speeds and high current handling capabilities.

Equivalent

The CSD17575Q3 is a N-channel MOSFET from Texas Instruments. Equivalent products include:
1. Infineon IRF3205
2. STMicroelectronics STL240N10
3. Vishay SiR404DP
4. ON Semiconductor NTMFS5C604NL
Ensure to check specific parameters like voltage, current ratings, and RDS(on) for compatibility in your application.