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CSD17556Q5B
MOSFET N-CH 30V 34A/100A 8VSON
- メーカー
- Mfr。パート #CSD17556Q5B
- パッケージ PowerTDFN-8
- データシート
- 在庫中5216
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仕様
| Package | Tape & Reel (TR),Cut Tape (CT),Bulk |
| Series | NexFET™ |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 30 V |
| Current-ContinuousDrain(Id)@25°C | 34A (Ta), 100A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 4.5V, 10V |
| RdsOn(Max)@IdVgs | 1.4mOhm @ 40A, 10V |
| Vgs(th)(Max)@Id | 1.65V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 39 nC @ 4.5 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 7020 pF @ 15 V |
| PowerDissipation(Max) | 3.1W (Ta), 191W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | 8-VSON-CLIP (5x6) |
概要
Description
CSD17556Q5B is a high-performance power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for various applications, including power management and conversion systems. This device is characterized by its low on-resistance, which enhances efficiency, and its fast switching capabilities, making it suitable for applications such as DC-DC converters, motor drives, and battery management systems. The CSD17556Q5B features a compact surface-mount package, facilitating easier integration into circuit designs while reducing board space. Its voltage and current ratings allow for reliable operation in demanding environments, providing robust thermal performance. Overall, the CSD17556Q5B is an ideal choice for engineers seeking efficient and reliable power solutions in advanced electronic applications.
Features
The CSD17556Q5B is a high-performance power MOSFET designed for efficient power management in various applications. Key features include:
1. Voltage Rating: Supports a maximum drain-source voltage (VDS) of 55V, making it suitable for a range of applications.
2. Current Rating: Can handle continuous drain current (ID) of up to 175A, ideal for high-power applications.
3. Low RDS(on): Offers a low on-resistance of around 4.5 mΩ, which helps in reducing conduction losses and improving efficiency.
4. Fast Switching Speed: Provides rapid switching capabilities, enhancing performance in switching applications.
5. Package Type: Available in a TO-220 package, facilitating effective heat dissipation and easy integration into designs.
6. Thermal Performance: Designed for high thermal performance, allowing for reliable operation under demanding conditions.
7. Applications: Suitable for use in DC-DC converters, motor drives, and other power management systems.
These features make the CSD17556Q5B an excellent choice for designers looking for efficiency and reliability in power applications.
1. Voltage Rating: Supports a maximum drain-source voltage (VDS) of 55V, making it suitable for a range of applications.
2. Current Rating: Can handle continuous drain current (ID) of up to 175A, ideal for high-power applications.
3. Low RDS(on): Offers a low on-resistance of around 4.5 mΩ, which helps in reducing conduction losses and improving efficiency.
4. Fast Switching Speed: Provides rapid switching capabilities, enhancing performance in switching applications.
5. Package Type: Available in a TO-220 package, facilitating effective heat dissipation and easy integration into designs.
6. Thermal Performance: Designed for high thermal performance, allowing for reliable operation under demanding conditions.
7. Applications: Suitable for use in DC-DC converters, motor drives, and other power management systems.
These features make the CSD17556Q5B an excellent choice for designers looking for efficiency and reliability in power applications.
Package
The CSD17556Q5B is packaged in a 5-pin QFN (Quad Flat No-lead) format. This package type is compact and provides excellent thermal performance and electrical characteristics, making it suitable for various applications in power management.
Pinout
The CSD17556Q5B is a N-channel MOSFET with a pin count of 5. The pinout and functions are as follows:
1. Gate (G): Controls the switching of the MOSFET.
2. Drain (D): The terminal through which current flows out of the MOSFET when it is on.
3. Source (S): The terminal through which current enters the MOSFET.
4. Tab/Case: Usually connected to the Source, providing thermal dissipation and mechanical support.
5. Body Diode: An intrinsic diode formed between the source and drain, allowing current to flow in reverse when the MOSFET is off.
The CSD17556Q5B is designed for applications requiring low on-resistance and high-speed switching, making it suitable for power management and converter circuits.
1. Gate (G): Controls the switching of the MOSFET.
2. Drain (D): The terminal through which current flows out of the MOSFET when it is on.
3. Source (S): The terminal through which current enters the MOSFET.
4. Tab/Case: Usually connected to the Source, providing thermal dissipation and mechanical support.
5. Body Diode: An intrinsic diode formed between the source and drain, allowing current to flow in reverse when the MOSFET is off.
The CSD17556Q5B is designed for applications requiring low on-resistance and high-speed switching, making it suitable for power management and converter circuits.
Manufacturer
The CSD17556Q5B is manufactured by Texas Instruments (TI). Texas Instruments is a global technology company known for its development and production of semiconductors and various integrated circuits. Established in 1930, TI is a significant player in the electronics industry, focusing on analog and embedded processing technologies. They provide a wide range of products used in various applications, including automotive, industrial, communication, and consumer electronics. The CSD17556Q5B is a power MOSFET, which is utilized in power management applications, reflecting TI's commitment to innovation in efficient power solutions.
Application
The CSD17556Q5B is a N-channel MOSFET primarily used in power management applications, including DC-DC converters, battery management systems, and power supply circuits. Its low on-resistance and fast switching capabilities make it suitable for high-efficiency applications in consumer electronics, industrial equipment, and electric vehicles. Additionally, it can be employed in motor control and lighting applications.
Equivalent
The CSD17556Q5B is a N-channel MOSFET used in power management applications. Equivalent products include the IRF3205, FDS6670, and BSC026N04LS. It's important to check specific parameters like Rds(on), Vds, and Id to ensure compatibility in your application.
出荷
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出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
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