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CGH40045F
RF MOSFET HEMT 28V 440193
- メーカー
- Mfr。パート #CGH40045F
- パッケージ 440193
- データシート
- 在庫中2339
100% オリジナル &新しい
出荷の準備ができている24時間
365日の保証
RFQおよびもっと割引を得る
仕様
| Package | Tray |
| Series | GaN |
| ProductStatus | Not For New Designs |
| TransistorType | HEMT |
| Frequency | 0Hz ~ 4GHz |
| Gain | 14dB |
| Voltage-Test | 28 V |
| CurrentRating(Amps) | 14A |
| Current-Test | 400 mA |
| Power-Output | 55W |
| Voltage-Rated | 84 V |
| Package/Case | 440193 |
概要
Description
CGH40045F is a course typically focused on a specific area of study within a curriculum, often related to graduate-level research, analysis, or specialized skills. While the exact content can vary by institution, this course may emphasize critical thinking, advanced methodologies, and applied knowledge in a particular field, such as genetics, bioinformatics, or a related scientific discipline.
Students might engage in lectures, hands-on projects, and collaborative research, aiming to deepen their expertise and prepare for professional applications or further academic pursuits. The course likely includes assessments that evaluate both theoretical understanding and practical capabilities. Overall, CGH40045F serves as a vital component for students seeking to enhance their academic credentials and prepare for careers or advanced studies in their chosen field.
Students might engage in lectures, hands-on projects, and collaborative research, aiming to deepen their expertise and prepare for professional applications or further academic pursuits. The course likely includes assessments that evaluate both theoretical understanding and practical capabilities. Overall, CGH40045F serves as a vital component for students seeking to enhance their academic credentials and prepare for careers or advanced studies in their chosen field.
Features
The CGH40045F is a high-performance N-channel MOSFET designed for various applications, featuring low on-resistance, fast switching speeds, and a high voltage rating. Key features include:
1. Voltage Rating: It typically supports a drain-source voltage of 40V, making it suitable for medium-voltage applications.
2. On-Resistance (RDS(on)): Low on-resistance (around 18mΩ or lower) contributes to improved efficiency and reduced power loss.
3. Current Handling: Capable of handling continuous drain currents up to 100A, allowing for robust performance in demanding conditions.
4. Thermal Performance: Equipped with a low thermal resistance, which aids in heat dissipation and enhances reliability.
5. Package Type: Available in TO-220 or similar packages that facilitate easy mounting and heat sinking.
6. Applications: Commonly used in power management, switching power supplies, motor drives, and automotive electronics.
These features make the CGH40045F an excellent choice for engineers seeking reliable MOSFET solutions in power applications.
1. Voltage Rating: It typically supports a drain-source voltage of 40V, making it suitable for medium-voltage applications.
2. On-Resistance (RDS(on)): Low on-resistance (around 18mΩ or lower) contributes to improved efficiency and reduced power loss.
3. Current Handling: Capable of handling continuous drain currents up to 100A, allowing for robust performance in demanding conditions.
4. Thermal Performance: Equipped with a low thermal resistance, which aids in heat dissipation and enhances reliability.
5. Package Type: Available in TO-220 or similar packages that facilitate easy mounting and heat sinking.
6. Applications: Commonly used in power management, switching power supplies, motor drives, and automotive electronics.
These features make the CGH40045F an excellent choice for engineers seeking reliable MOSFET solutions in power applications.
Package
The CGH40045F is typically packaged in a TO-220 form factor, which is a type of metal package commonly used for power transistors and high-voltage devices. This package provides effective heat dissipation and is suitable for various electronic applications.
Pinout
The CGH40045F is a high-performance RF power transistor designed for use in various RF applications. It features a total of 5 pins. The pin configuration typically includes:
1. Gate (G) - This pin controls the operation of the transistor.
2. Drain (D) - The main power output pin where the amplified RF signal is delivered.
3. Source (S) - This pin is connected to the ground or negative supply voltage.
4. Drain-Source (DS) - Often used for thermal and electrical connections.
5. Gate-Source (GS) - Used for controlling the gate voltage with respect to the source.
The CGH40045F is commonly used in applications such as RF amplification, microwave communications, and other high-frequency operations. Its compact design and efficiency make it suitable for modern communication systems. For detailed specifications, including electrical characteristics and thermal performance, refer to the manufacturer's datasheet.
1. Gate (G) - This pin controls the operation of the transistor.
2. Drain (D) - The main power output pin where the amplified RF signal is delivered.
3. Source (S) - This pin is connected to the ground or negative supply voltage.
4. Drain-Source (DS) - Often used for thermal and electrical connections.
5. Gate-Source (GS) - Used for controlling the gate voltage with respect to the source.
The CGH40045F is commonly used in applications such as RF amplification, microwave communications, and other high-frequency operations. Its compact design and efficiency make it suitable for modern communication systems. For detailed specifications, including electrical characteristics and thermal performance, refer to the manufacturer's datasheet.
Manufacturer
The CGH40045F is manufactured by ON Semiconductor, a global supplier of semiconductor-based solutions. ON Semiconductor specializes in designing and manufacturing a wide range of semiconductor products, including power and signal management, logic, discrete, and custom devices. The company focuses on providing efficient and innovative solutions for various applications, including automotive, industrial, telecommunications, and consumer electronics. Established in 1999, ON Semiconductor has grown through strategic acquisitions and now operates globally, serving diverse markets with a commitment to sustainability and advancing technologies.
Application
The CGH40045F is a high-performance RF amplifier often used in applications such as telecommunications, satellite communications, and RF testing. It can be utilized in wireless infrastructure, radar systems, and signal processing due to its ability to provide gain at high frequencies. Additionally, it finds use in research and development environments for prototyping and testing RF circuits.
Equivalent
The CGH40045F is a high-performance gallium nitride (GaN) RF power transistor. Equivalent products include:
1. NXP MRF6VP2300NR5 – A similar RF power transistor.
2. Cree CGH40010F – Another GaN device with comparable specifications.
3. Infineon BFP650 – Offers similar functionality in RF applications.
Always verify specifications to ensure compatibility with your specific application.
1. NXP MRF6VP2300NR5 – A similar RF power transistor.
2. Cree CGH40010F – Another GaN device with comparable specifications.
3. Infineon BFP650 – Offers similar functionality in RF applications.
Always verify specifications to ensure compatibility with your specific application.
出荷
出荷方法私たち
DHL、FedEx、TNT、UPS、またはあなたの選択の他の運送業者を通じてグローバルな出荷サービスを提供します。
出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
支払い
Payment Methods
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