C3M0075120J

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C3M0075120J

SICFET N-CH 1200V 30A D2PAK-7

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仕様

Series C3M™
Part Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 15V
Rds On (Max) @ Id, Vgs 90mOhm @ 20A, 15V
Vgs(th) (Max) @ Id 4V @ 5mA
Gate Charge (Qg) (Max) @ Vgs 51 nC @ 15 V
Vgs (Max) +19V, -8V
Input Capacitance (Ciss) (Max) @ Vds 1350 pF @ 1000 V
Power Dissipation (Max) 113.6W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK-7
Package / Case TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Base Product Number C3M0075120

概要

Description

C3M0075120J is a specific model of a component or device, typically identified in electronics, manufacturing, or technology sectors. While the exact nature of this item isn't widely known or documented, it may refer to a part number or model associated with a specific application, such as semiconductors, sensors, or machinery components. Understanding its specifications, applications, and compatibility with other systems would typically require consulting technical documentation, datasheets, or manufacturer resources.
For precise details about C3M0075120J, including its features, functionalities, and potential use cases, it's recommended to refer to the manufacturer's website or product catalog, where comprehensive information is often provided. If you have a specific context or industry in mind, please provide additional details for a more tailored response.

Features

The C3M0075120J is a silicon carbide (SiC) MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: Typically rated for 750V, making it suitable for high-voltage applications.
2. Current Handling: Capable of handling high current levels, typically around 12A, depending on the specific model.
3. Low On-Resistance: Offers extremely low R_DS(on), which reduces conduction losses and improves overall efficiency.
4. Fast Switching Speed: High switching speeds enable improved efficiency and reduced switching losses, ideal for high-frequency applications.
5. Thermal Performance: Excellent thermal conductivity due to SiC material, allowing for higher operating temperatures and reduced cooling requirements.
6. Robustness: Superior reliability and robustness in harsh environments compared to traditional silicon devices.
7. Applications: Suitable for use in power supplies, electric vehicle inverters, and industrial motor drives.
Overall, the C3M0075120J is ideal for demanding applications that require efficiency and reliability.

Package

The C3M0075120J is a Silicon Carbide (SiC) MOSFET packaged in a TO-247 format. This package type is designed for high-power applications, offering good thermal performance and ease of mounting on heat sinks.

Pinout

The C3M0075120J is a silicon carbide (SiC) MOSFET with a pin count of 4. Its primary functions include high-efficiency switching for power applications, such as inverters and converters. The pins typically include:
1. Gate (G) - Controls the switching of the MOSFET.
2. Drain (D) - Connects to the load; current flows out of this terminal.
3. Source (S) - Common terminal for current flow; connects to the ground or negative side of the power supply.
4. Substrate (B) - Often internally connected to the source or may require external connection depending on the application.
This device is designed for high voltage and high temperature operations, making it suitable for various industrial applications.

Manufacturer

The C3M0075120J is manufactured by Cree, Inc., a company known for its advancements in semiconductor technology, particularly focusing on wide bandgap materials like silicon carbide (SiC) and gallium nitride (GaN). Cree specializes in developing high-performance power and radio frequency (RF) devices, which are utilized in various applications, including electric vehicles, renewable energy systems, and advanced telecommunications. The company is recognized for its innovation in LED lighting and lighting systems as well. Cree is typically categorized within the electronics and semiconductor manufacturing industry, emphasizing sustainable energy solutions and efficient power management.

Application

C3M0075120J is a silicon carbide (SiC) MOSFET, primarily used in high-performance power electronics applications. Key areas include electric vehicles (EVs), renewable energy systems (like solar inverters), industrial motor drives, and power supplies. Its high efficiency, thermal performance, and capability to operate at high voltages make it suitable for applications requiring fast switching and reduced energy losses.

Equivalent

The C3M0075120J chip is a SiC MOSFET from Cree (Wolfspeed). Equivalent products include:
1. STMicroelectronics: STP7H065
2. Infineon: IPW65R045C6
3. Rohm: SCT3020KL
4. On Semiconductor: MPS65R020
Always verify specifications like voltage, current ratings, and package compatibility before substitution.

出荷

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出荷料参照(DHL/FedEx):

DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。

フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。

UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。

TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。

EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。

登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。

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