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C2M1000170D
SICFET N-CH 1700V 4.9A TO247-3
- メーカー
- Mfr。パート #C2M1000170D
- パッケージ
- データシート C2M1000170D DataSheet
- 在庫中4025
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仕様
| Series | Z-FET™ |
| Part Status | Obsolete |
| Base Product Number | C2M1000170 |
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1700 V |
| Current - Continuous Drain (Id) @ 25°C | 4.9A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Rds On (Max) @ Id, Vgs | 1.1Ohm @ 2A, 20V |
| Vgs(th) (Max) @ Id | 4V @ 500µA |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 20 V |
| Vgs (Max) | +25V, -10V |
| Input Capacitance (Ciss) (Max) @ Vds | 191 pF @ 1000 V |
| Power Dissipation (Max) | 69W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247-3 |
| Package | TO-247-3 |
| Packaging | Tube |
概要
Description
C2M1000170D refers to a specific product or model identifier, often used in technology or manufacturing sectors. Although detailed information about this particular code is not provided, identifiers of this nature typically denote a unique item that may encompass features, specifications, or categorizations relevant to its respective field, such as electronics, automotive parts, or machinery components.
For a precise understanding, it is essential to consult the manufacturer's documentation or database where this code is listed. This resource will provide insights into the product’s specifications, usage, compatibility, and any relevant technical details. If you have more context or a specific industry in mind, I can provide further tailored information.
For a precise understanding, it is essential to consult the manufacturer's documentation or database where this code is listed. This resource will provide insights into the product’s specifications, usage, compatibility, and any relevant technical details. If you have more context or a specific industry in mind, I can provide further tailored information.
Features
The C2M1000170D is a silicon carbide (SiC) MOSFET designed for high-performance applications. Key features include:
1. High Voltage Capability: With a maximum blocking voltage of 1700V, it is suitable for high-voltage applications.
2. Low On-State Resistance: This device exhibits a low R_DS(on), which reduces conduction losses and improves efficiency.
3. Fast Switching Speed: The C2M1000170D benefits from rapid switching characteristics, making it ideal for applications in power conversion and inverters.
4. High Thermal Conductivity: The SiC material provides better thermal conductivity than traditional silicon, allowing for improved heat dissipation.
5. Robustness: Designed to withstand harsh environments, it offers better reliability in demanding conditions.
6. Low Gate Charge: This feature contributes to reduced drive power requirements, enhancing overall system efficiency.
7. Applications: Commonly used in renewable energy systems, electric vehicles, and industrial power supplies.
Overall, the C2M1000170D is a versatile choice for efficient and reliable power management solutions.
1. High Voltage Capability: With a maximum blocking voltage of 1700V, it is suitable for high-voltage applications.
2. Low On-State Resistance: This device exhibits a low R_DS(on), which reduces conduction losses and improves efficiency.
3. Fast Switching Speed: The C2M1000170D benefits from rapid switching characteristics, making it ideal for applications in power conversion and inverters.
4. High Thermal Conductivity: The SiC material provides better thermal conductivity than traditional silicon, allowing for improved heat dissipation.
5. Robustness: Designed to withstand harsh environments, it offers better reliability in demanding conditions.
6. Low Gate Charge: This feature contributes to reduced drive power requirements, enhancing overall system efficiency.
7. Applications: Commonly used in renewable energy systems, electric vehicles, and industrial power supplies.
Overall, the C2M1000170D is a versatile choice for efficient and reliable power management solutions.
Package
The package type of C2M1000170D is typically a TO-247 package. This type of package is commonly used for high-power devices, offering good thermal performance and robustness.
Pinout
The C2M1000170D is a silicon carbide (SiC) MOSFET with a pin count of 6. Its primary function is to act as a high-efficiency power switch in various applications, including industrial motor drives, power supplies, and renewable energy systems.
The pins are typically configured for gate control, drain, and source connections, allowing for robust performance in high-voltage and high-temperature environments. This device is known for its fast switching capabilities and low on-resistance, making it suitable for high-frequency applications.
For specific pin assignments, refer to the manufacturer's datasheet for detailed information on the functionality of each pin.
The pins are typically configured for gate control, drain, and source connections, allowing for robust performance in high-voltage and high-temperature environments. This device is known for its fast switching capabilities and low on-resistance, making it suitable for high-frequency applications.
For specific pin assignments, refer to the manufacturer's datasheet for detailed information on the functionality of each pin.
Manufacturer
The C2M1000170D is a silicon carbide (SiC) MOSFET manufactured by CREE, Inc., which is now known as Wolfspeed, a subsidiary of the Cree brand. Wolfspeed specializes in wide bandgap semiconductor technology, focusing on silicon carbide and gallium nitride materials. They produce a range of high-performance power and radio frequency devices, primarily for applications in electric vehicles, renewable energy systems, and industrial power supplies. Wolfspeed is recognized for advancing efficiency and performance in power electronics, making significant contributions to the development of next-generation energy solutions.
Application
C2M1000170D is commonly used in various applications, including automotive electronics, industrial automation, and consumer electronics. It serves in power management systems, signal processing, and communication devices. Its versatility allows for use in high-efficiency converters, battery management systems, and renewable energy applications, enhancing performance and reliability in these sectors.
Equivalent
The C2M1000170D chip, a silicon carbide (SiC) MOSFET, can be equivalently substituted with devices such as the C2M1000170D from Cree (Wolfspeed), the STMicroelectronics SCT2060KL, and the ON Semiconductor NTP60R120. Always verify the specifications, such as voltage ratings and current handling capabilities, to ensure compatibility in your application.
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出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
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