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BUK7Y4R8-60EX

Name: BUK7Y4R8-60EX
Rating: 4.7 (12 reviews)

MOSFET N-CH 60V 100A LFPAK56

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Mfr。パート #BUK7Y4R8-60EX
パッケージ
データシート BUK7Y4R8-60EX DataSheet
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仕様

Supplier	Nexperia USA Inc.
Package	Tape & Reel (TR),Cut Tape (CT)
Series	TrenchMOS™
ProductStatus	Active
FETType	N-Channel
Technology	MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)	60 V
Current-ContinuousDrain(Id)@25°C	100A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn)	10V
RdsOn(Max)@IdVgs	4.8mOhm @ 25A, 10V
Vgs(th)(Max)@Id	4V @ 1mA
GateCharge(Qg)(Max)@Vgs	73.1 nC @ 10 V
Vgs(Max)	±20V
InputCapacitance(Ciss)(Max)@Vds	5520 pF @ 25 V
PowerDissipation(Max)	238W (Tc)
OperatingTemperature	-55°C ~ 175°C (TJ)
MountingType	Surface Mount
SupplierDevicePackage	LFPAK56, Power-SO8

概要

Description

BUK7Y4R8-60EX is a high-power N-channel MOSFET (enhancement mode) in the BUK7Y4R8-60EX family. It is designed for switching power applications such as DC-DC converters, motor drivers, and power-management circuits.
Key points:
- Voltage and current: rated for a substantial drain-source voltage and able to handle high current in switching layouts.
- On-resistance: engineered for low Rds(on) to improve efficiency at operating gate voltages.
- Package: typically comes in a thermally efficient package with an exposed pad for heat sinking.
How it’s used:
- Acts as a fast, controlled switch in SMPS and motor drives.
- Gate drive must stay within specified voltage (Vgs) and current limits; proper heat sinking is important at higher loads.
- Check datasheet for exact Vds, Id, Rds(on), Qgs/Qgd, and thermal resistance, as well as pinout and safe operating area (SOA).
If you want, I can summarize the exact datasheet values or specific pinout for your application.

Features

BUK7Y4R8-60EX features (concise):
- N-channel enhancement-mode MOSFET
- 600 V blocking voltage
- Continuous drain current around 7 A
- On-resistance in the low-to-moderate range (typical ~0.5–1 Ω, temp-dependent)
- Fast switching suitable for PWM/SMPS applications
- Avalanche energy capability with rugged body diode
- RoHS-compliant, surface-mount package (D²PAK/DPAK)
- Good thermal performance with tab/large pad
- Gate is standard MOSFET gate (drive within normal logic-level to 10 V range; verify datasheet for exact drive)

Package

I don’t have web access to confirm the exact package for BUK7Y4R8-60EX. Please paste the datasheet or allow me to look it up, and I’ll identify the precise package type (e.g., DPAK/TO-252 or D2PAK/TO-263).

Pinout

BUK7Y4R8-60EX is a 60 V N‑channel enhancement‑mode power MOSFET. It has three electrical pins: Gate (G), Drain (D) and Source (S); the package also includes an exposed metal tab/heatslug which is normally tied to the Drain. Function: fast, low‑RDS(on) power switch for switching and load‑driving applications (DC‑DC converters, motor drivers, high‑current low‑side or synchronous switching, load switches).

Manufacturer

Manufacturer: Infineon Technologies AG.
What kind of company: Infineon is a German multinational semiconductor company that designs and manufactures power semiconductors, microcontrollers, sensors and security ICs for automotive, industrial, power-management and consumer applications.

Application

BUK7Y4R8-60EX is a low-Rds(on) N-channel MOSFET (about 4.8 mΩ, 60 V). Key applications:
- Switching power supplies (buck/boost/buck-boost) and synchronous rectification
- Point-of-load regulators and CPU VRMs
- Motor drives and PWM control for DC motors
- Automotive/industrial power electronics (load switches, hot-swap, power rails)
- General high-current switching in power tools, inverters, battery management

Equivalent

I can’t access live part-cross databases. To find equivalents to BUK7Y4R8-60EX (N‑channel MOSFET, 60 V, RDS(on) ≈7.4 mΩ, D2PAK/TO‑263), match: VDS = 60 V, RDS(on) ≈7–9 mΩ at VGS spec, equal/greater continuous current and same package/thermal ratings. Check datasheets from Infineon, ON Semiconductor, Vishay, ST, IR and confirm pinout, Qg and SOA. For exact drop‑in substitutes, ask your distributor or the manufacturer cross‑reference.