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BSZ097N04LSG
- メーカー
- Mfr。パート #BSZ097N04LSG
- パッケージ
- データシート
- 在庫中5653
100% オリジナル &新しい
出荷の準備ができている24時間
365日の保証
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仕様
| Manufacturer | Infineon Technologies |
| Package | TSDSON-8(3.3x3.3) |
| Operating Temperature | -55℃~+150℃ |
| RDS(on) | 9.7mΩ@10V,20A |
| Drain to Source Voltage | 40V |
| Pd - Power Dissipation | 35W |
| Current - Continuous Drain(Id) | 40A |
| Reverse Transfer Capacitance (Crss@Vds) | 16pF |
| Gate Threshold Voltage (Vgs(th)@Id) | 2V |
| Gate Charge(Qg) | 24nC@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.9nF |
概要
Description
BSZ097N04LSG is a specific part number referencing a type of semiconductor, likely a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor). This component is often utilized in various electronic applications, including power management, switching, and amplification.
Key specifications typically include parameters like maximum drain-source voltage (VDS), continuous drain current (ID), and gate threshold voltage (VGS(th)). These characteristics determine the device's performance in circuits, influencing aspects like efficiency and thermal management.
Applications may range from consumer electronics to industrial systems, where reliable switching and power control are essential. When working with BSZ097N04LSG, designers must consider integration into broader circuit designs, ensuring compatibility with other components and adherence to necessary electrical standards.
For detailed specifications, it's advisable to refer to the manufacturer's datasheet, which provides comprehensive information on electrical characteristics, thermal data, and recommended operating conditions.
Key specifications typically include parameters like maximum drain-source voltage (VDS), continuous drain current (ID), and gate threshold voltage (VGS(th)). These characteristics determine the device's performance in circuits, influencing aspects like efficiency and thermal management.
Applications may range from consumer electronics to industrial systems, where reliable switching and power control are essential. When working with BSZ097N04LSG, designers must consider integration into broader circuit designs, ensuring compatibility with other components and adherence to necessary electrical standards.
For detailed specifications, it's advisable to refer to the manufacturer's datasheet, which provides comprehensive information on electrical characteristics, thermal data, and recommended operating conditions.
Features
The BSZ097N04LSG is a N-channel MOSFET designed for high-efficiency switching applications. It features a low on-resistance (RDS(on)) of 4.5 mΩ, enabling minimal power loss and improved thermal performance. The device has a maximum continuous drain current (ID) of 97 A, allowing it to handle significant loads.
With a gate threshold voltage (VGS(th)) between 2-4 V, it can be driven with lower gate voltages, enhancing compatibility with various control circuits. The BSZ097N04LSG also boasts a high breakdown voltage (VDS) of 40 V, making it suitable for applications in automotive and power management systems.
Its compact package (DPAK) facilitates efficient thermal dissipation and ease of integration into PCB layouts. The device is ideal for applications such as DC-DC converters, power supplies, and motor drivers, where efficiency and thermal management are critical.
Overall, the BSZ097N04LSG is optimized for high-performance and energy-efficient applications in both consumer and industrial sectors.
With a gate threshold voltage (VGS(th)) between 2-4 V, it can be driven with lower gate voltages, enhancing compatibility with various control circuits. The BSZ097N04LSG also boasts a high breakdown voltage (VDS) of 40 V, making it suitable for applications in automotive and power management systems.
Its compact package (DPAK) facilitates efficient thermal dissipation and ease of integration into PCB layouts. The device is ideal for applications such as DC-DC converters, power supplies, and motor drivers, where efficiency and thermal management are critical.
Overall, the BSZ097N04LSG is optimized for high-performance and energy-efficient applications in both consumer and industrial sectors.
Package
The BSZ097N04LSG is packaged in a TO-220 format, which is a type of through-hole package commonly used for power MOSFETs. This package is designed to provide effective heat dissipation and facilitate easy mounting on a heatsink.
Pinout
The BSZ097N04LSG is a N-channel MOSFET with a pin count of 5. The pin configuration is as follows:
1. Gate (G): Controls the switch; applying a voltage turns the MOSFET on.
2. Drain (D): The terminal where the current flows out when the MOSFET is on.
3. Source (S): The terminal where the current enters when the MOSFET is on.
4. Body (B): Typically internally connected to the source; it provides a path for parasitic diodes.
5. Tab/Heatsink: Often used for thermal management, connected to the drain or source.
The BSZ097N04LSG is designed for applications that require high efficiency and low on-resistance, making it suitable for power management and switching applications in various electronic devices.
1. Gate (G): Controls the switch; applying a voltage turns the MOSFET on.
2. Drain (D): The terminal where the current flows out when the MOSFET is on.
3. Source (S): The terminal where the current enters when the MOSFET is on.
4. Body (B): Typically internally connected to the source; it provides a path for parasitic diodes.
5. Tab/Heatsink: Often used for thermal management, connected to the drain or source.
The BSZ097N04LSG is designed for applications that require high efficiency and low on-resistance, making it suitable for power management and switching applications in various electronic devices.
Manufacturer
The BSZ097N04LSG is manufactured by Nexperia, a semiconductor company that specializes in the production of discrete, logic, and MOSFET devices. Nexperia focuses on providing high-quality components for various applications, including automotive, industrial, and consumer electronics. The company emphasizes reliability, efficiency, and performance in its product offerings. Nexperia operates globally, with a commitment to innovation and technology in the semiconductor industry.
Application
The BSZ097N04LSG is a N-channel MOSFET primarily used in power management applications, including DC-DC converters, power supplies, motor drivers, and LED lighting. It is suitable for switching applications due to its low on-resistance and high-speed performance, making it ideal for efficient power conversion and thermal management in consumer electronics and industrial systems.
Equivalent
The BSZ097N04LSG is a N-channel MOSFET. Equivalent products include the IRF3205, STP75NF75, and FQP75N06. Always check specifications such as voltage, current, and R_DS(on) to ensure compatibility.
出荷
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出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
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