画像は参照用のみです。
BSZ070N08LS5
MOSFETs TRENCH 40<-<100V
- メーカー
- Mfr。パート #BSZ070N08LS5
- パッケージ
- データシート BSZ070N08LS5 DataSheet
- 在庫中12080
100% オリジナル &新しい
出荷の準備ができている24時間
365日の保証
RFQおよびもっと割引を得る
仕様
| Packaging | Reel |
概要
Description
BSZ070N08LS5 is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for use in various electronic applications, including power management and switching. It features a maximum drain-source voltage (V_DS) of 80V and a continuous drain current (I_D) of 70A, making it suitable for high-power applications. The "L" in its designation indicates a low gate threshold voltage, enhancing efficiency in switching operations.
This MOSFET has a low on-resistance (R_DS(on)), which minimizes power loss and heat generation during operation. It is often used in DC-DC converters, motor drivers, and other switching circuits where efficiency and thermal management are critical. The device is housed in a TO-220 package, which aids in heat dissipation.
Overall, BSZ070N08LS5 is favored for its performance characteristics in high-efficiency power applications, making it a popular choice among engineers and designers in the field of electronic circuitry.
This MOSFET has a low on-resistance (R_DS(on)), which minimizes power loss and heat generation during operation. It is often used in DC-DC converters, motor drivers, and other switching circuits where efficiency and thermal management are critical. The device is housed in a TO-220 package, which aids in heat dissipation.
Overall, BSZ070N08LS5 is favored for its performance characteristics in high-efficiency power applications, making it a popular choice among engineers and designers in the field of electronic circuitry.
Features
The BSZ070N08LS5 is a N-channel MOSFET designed for power applications. Key features include:
1. Voltage Rating: It supports a maximum drain-source voltage (V_DS) of 80V, making it suitable for various high-voltage applications.
2. Continuous Drain Current: The device can handle a continuous drain current (I_D) of up to 70A at a specified temperature, enabling efficient power management.
3. R_DS(on): It has a low on-resistance typically around 9.6 mΩ, allowing for reduced power losses and improved thermal performance.
4. Fast Switching: The MOSFET offers fast switching capabilities, which is beneficial for high-frequency applications like DC-DC converters.
5. Thermal Performance: With its TO-220 package, it provides effective heat dissipation, enhancing reliability in demanding environments.
6. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) is in the range of 2V to 4V, allowing for easy drive with standard logic levels.
These features make the BSZ070N08LS5 ideal for applications in power supply circuits, motor drives, and other electronic systems requiring efficient switching.
1. Voltage Rating: It supports a maximum drain-source voltage (V_DS) of 80V, making it suitable for various high-voltage applications.
2. Continuous Drain Current: The device can handle a continuous drain current (I_D) of up to 70A at a specified temperature, enabling efficient power management.
3. R_DS(on): It has a low on-resistance typically around 9.6 mΩ, allowing for reduced power losses and improved thermal performance.
4. Fast Switching: The MOSFET offers fast switching capabilities, which is beneficial for high-frequency applications like DC-DC converters.
5. Thermal Performance: With its TO-220 package, it provides effective heat dissipation, enhancing reliability in demanding environments.
6. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) is in the range of 2V to 4V, allowing for easy drive with standard logic levels.
These features make the BSZ070N08LS5 ideal for applications in power supply circuits, motor drives, and other electronic systems requiring efficient switching.
Package
The BSZ070N08LS5 is packaged in a TO-220 form factor. This package type is commonly used for power MOSFETs, providing good thermal performance and ease of mounting on heatsinks for effective heat dissipation.
Pinout
The BSZ070N08LS5 is an N-channel MOSFET with a pin count of 5. Its primary functions include switching and amplification in electronic circuits. The pins are typically configured as follows:
1. Gate (G) - This pin controls the MOSFET operation. A voltage applied here allows current to flow from drain to source.
2. Drain (D) - This pin is where the current exits the device; it connects to the load.
3. Source (S) - This pin is where the current enters the device, typically connected to ground in low-side switching applications.
4. Gate (G) - The second gate pin is for enhanced control, allowing for better thermal management and performance in certain configurations.
5. Source (S) - The second source pin serves similar purposes as the first, providing flexibility in layout and thermal characteristics.
This MOSFET is commonly used in power management applications, including DC-DC converters and motor drivers, due to its low on-resistance and high efficiency.
1. Gate (G) - This pin controls the MOSFET operation. A voltage applied here allows current to flow from drain to source.
2. Drain (D) - This pin is where the current exits the device; it connects to the load.
3. Source (S) - This pin is where the current enters the device, typically connected to ground in low-side switching applications.
4. Gate (G) - The second gate pin is for enhanced control, allowing for better thermal management and performance in certain configurations.
5. Source (S) - The second source pin serves similar purposes as the first, providing flexibility in layout and thermal characteristics.
This MOSFET is commonly used in power management applications, including DC-DC converters and motor drivers, due to its low on-resistance and high efficiency.
Manufacturer
The BSZ070N08LS5 is manufactured by Infineon Technologies AG, a leading global semiconductor manufacturer based in Germany. Infineon specializes in the development and production of advanced semiconductor solutions for various applications, including automotive, industrial, and communication sectors. The company is renowned for its innovations in power management, automotive safety, and security technologies. Infineon plays a significant role in the growing market for energy-efficient solutions and smart technologies, contributing to the advancement of Internet of Things (IoT) and renewable energy systems.
Application
The BSZ070N08LS5 is a N-channel MOSFET primarily used in applications such as power management, DC-DC converters, motor control, and power supplies. Its low on-resistance and high efficiency make it suitable for use in automotive, industrial, and consumer electronics where space and thermal performance are critical. It can also be utilized in renewable energy systems, such as solar inverters, and battery management systems.
Equivalent
The BSZ070N08LS5 is an N-channel MOSFET. Equivalent products include:
1. STP7NK80Z
2. IRF3205
3. FQP30N06L
4. BTA10-600V
Ensure to check specifications like V_DS, I_D, R_DS(on), and package type for compatibility.
1. STP7NK80Z
2. IRF3205
3. FQP30N06L
4. BTA10-600V
Ensure to check specifications like V_DS, I_D, R_DS(on), and package type for compatibility.
出荷
出荷方法私たち
DHL、FedEx、TNT、UPS、またはあなたの選択の他の運送業者を通じてグローバルな出荷サービスを提供します。
出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
支払い
Payment Methods
支払い期間は100%前払いです。
現在、下記の支払い方法のみを受け入れています。:
1. ペイパル
2. クレジット・デビットカード
3. ワイヤー 転送
類似
-
MX29F400CBTI-70G
Macronix
-
MX25V5126FM1I
Macronix
-
MX25V2033FM1I
Macronix
-
MX25V16066M2I02
Macronix
-
MX25L8035EM2I-10G
Macronix
-
MX25R1635FZUIH0
Macronix
-
MX29LV160DTTI-70G
Macronix
-
MX29F040CTI-70G
Macronix
-
MX25U51245GZ4I00
Macronix
-
MX25L1006EMI-10G
Macronix
-
MX66U1G45GMI00
Macronix
-
MX25L4006EM2I-12G
Macronix