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BSZ063N04LS6
MOSFETs TRENCH <= 40V
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- Mfr。パート #BSZ063N04LS6
- パッケージ
- データシート BSZ063N04LS6 DataSheet
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仕様
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概要
Description
BSZ063N04LS6 is a high-performance N-channel MOSFET primarily used in power management applications. It features a low on-resistance, allowing for efficient power conversion and minimizing energy loss in circuits. With a voltage rating of 40V and a continuous drain current of 63A, this MOSFET is suitable for various applications, including DC-DC converters, motor drivers, and energy-efficient power supplies.
The device is packaged in a compact DPAK format, which enables effective thermal management and simplifies integration into electronic designs. Its fast switching capabilities enhance performance in high-speed applications. Additionally, the BSZ063N04LS6 is characterized by low gate charge, making it easier to drive while enabling higher efficiency in switching operations. Overall, this MOSFET serves as an ideal choice for engineers looking to optimize designs for power efficiency and reliability in demanding environments.
The device is packaged in a compact DPAK format, which enables effective thermal management and simplifies integration into electronic designs. Its fast switching capabilities enhance performance in high-speed applications. Additionally, the BSZ063N04LS6 is characterized by low gate charge, making it easier to drive while enabling higher efficiency in switching operations. Overall, this MOSFET serves as an ideal choice for engineers looking to optimize designs for power efficiency and reliability in demanding environments.
Features
The BSZ063N04LS6 is a N-channel MOSFET designed for high-efficiency power applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 40V, allowing it to handle substantial voltage levels in various applications.
2. Current Rating: The MOSFET can support a continuous drain current (I_D) of up to 63A, making it suitable for high-current applications.
3. Low On-Resistance: It features a low R_DS(on) of approximately 6 mΩ, which minimizes power loss during operation and improves overall efficiency.
4. Fast Switching: The device is designed for rapid switching capabilities, enhancing performance in DC-DC converters and other switching applications.
5. TO-220 Package: Housed in a TO-220 package, it offers good thermal performance, enabling effective heat dissipation.
6. Applications: Ideal for use in power supplies, motor drives, and other high-frequency applications.
These features make the BSZ063N04LS6 a reliable choice for designers looking for robust performance in power management solutions.
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 40V, allowing it to handle substantial voltage levels in various applications.
2. Current Rating: The MOSFET can support a continuous drain current (I_D) of up to 63A, making it suitable for high-current applications.
3. Low On-Resistance: It features a low R_DS(on) of approximately 6 mΩ, which minimizes power loss during operation and improves overall efficiency.
4. Fast Switching: The device is designed for rapid switching capabilities, enhancing performance in DC-DC converters and other switching applications.
5. TO-220 Package: Housed in a TO-220 package, it offers good thermal performance, enabling effective heat dissipation.
6. Applications: Ideal for use in power supplies, motor drives, and other high-frequency applications.
These features make the BSZ063N04LS6 a reliable choice for designers looking for robust performance in power management solutions.
Package
The BSZ063N04LS6 is typically packaged in a TO-220 form factor. This package type features a metal tab for heat dissipation, making it suitable for high-power applications.
Pinout
The BSZ063N04LS6 is a N-channel MOSFET with a total of 8 pins. Its primary functions include acting as a switch for electronic circuits, enabling efficient control of power in applications such as power supplies, motor drivers, and DC-DC converters. The pin configuration typically includes:
1. Gate (G): Controls the MOSFET's switching.
2. Drain (D): The output terminal through which current flows.
3. Source (S): The terminal connected to the ground or negative supply.
The BSZ063N04LS6 features low on-resistance and high-speed switching capabilities, making it suitable for high-efficiency applications. It is commonly used in automotive and industrial applications due to its robustness and performance characteristics. For precise pin assignments and electrical characteristics, refer to the manufacturer's datasheet.
1. Gate (G): Controls the MOSFET's switching.
2. Drain (D): The output terminal through which current flows.
3. Source (S): The terminal connected to the ground or negative supply.
The BSZ063N04LS6 features low on-resistance and high-speed switching capabilities, making it suitable for high-efficiency applications. It is commonly used in automotive and industrial applications due to its robustness and performance characteristics. For precise pin assignments and electrical characteristics, refer to the manufacturer's datasheet.
Manufacturer
The BSZ063N04LS6 is manufactured by Nexperia, a company specializing in discrete, logic, and MOSFET semiconductor devices. Nexperia is known for producing high-quality products for various applications across automotive, industrial, consumer, and communication sectors. The company focuses on delivering reliable and efficient semiconductor solutions, with an emphasis on innovation and sustainability. Nexperia is a global player in the semiconductor industry, catering to a wide range of electronic component needs.
Application
The BSZ063N04LS6 is a N-channel MOSFET primarily used in power management applications, including DC-DC converters, power supplies, and motor drives. Its low on-resistance and high-speed switching capabilities make it suitable for applications in electric vehicles, renewable energy systems, and consumer electronics. Additionally, it is often employed in circuit protection and load management due to its efficiency and thermal performance.
Equivalent
The BSZ063N04LS6 is an N-channel MOSFET. Equivalent products include the IRLZ44N, STP55NF06, and FQD28N06L. Ensure to check specifications like voltage, current rating, and RDS(on) to confirm compatibility for specific applications.
出荷
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出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
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