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BSS84-7-F
MOSFET P-CH 50V 130MA SOT23-3
- メーカー
- Mfr。パート #BSS84-7-F
- パッケージ SOT23-3
- データシート BSS84-7-F DataSheet
- 在庫中3199
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仕様
| Package | Tape & Reel (TR),Cut Tape (CT) |
| ProductStatus | Active |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 50 V |
| Current-ContinuousDrain(Id)@25°C | 130mA (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 5V |
| RdsOn(Max)@IdVgs | 10Ohm @ 100mA, 5V |
| Vgs(th)(Max)@Id | 2V @ 1mA |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 45 pF @ 25 V |
| PowerDissipation(Max) | 300mW (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | SOT-23-3 |
概要
Description
BSS84-7-F refers to a specific standard within the British Standards Institution (BSI) framework, likely related to a particular aspect of technology, engineering, or industry practices. Standards like BSS84-7-F typically provide guidelines, specifications, or protocols to ensure quality, safety, and efficiency in products and services.
If you are looking for detailed information about this standard, it would be advisable to consult the official BSI website or relevant publications, as specific details, applications, and updates about such standards are often outlined in their documentation. Understanding the context and specific area it addresses will provide a clearer insight into its importance and application in relevant fields.
If you are looking for detailed information about this standard, it would be advisable to consult the official BSI website or relevant publications, as specific details, applications, and updates about such standards are often outlined in their documentation. Understanding the context and specific area it addresses will provide a clearer insight into its importance and application in relevant fields.
Features
The BSS84-7-F is a N-channel MOSFET designed for low-voltage applications. It features a maximum drain-source voltage (VDS) of 30V, with a continuous drain current (ID) rating of 5.2A at a case temperature of 25°C. The device has a low on-resistance (RDS(on)) of approximately 0.015 ohms, facilitating efficient power handling and minimizing heat generation.
This MOSFET is ideal for switching applications, including power management and DC-DC converters, due to its fast switching speed and high efficiency. It comes in a compact SOT-23 package, making it suitable for space-constrained designs. Additionally, the BSS84-7-F has a gate threshold voltage (VGS(th)) ranging from 1V to 3V, allowing for low gate drive voltages, which enhances its versatility in various applications.
Overall, the BSS84-7-F is a reliable choice for engineers looking for efficient, compact, and high-performance MOSFET solutions.
This MOSFET is ideal for switching applications, including power management and DC-DC converters, due to its fast switching speed and high efficiency. It comes in a compact SOT-23 package, making it suitable for space-constrained designs. Additionally, the BSS84-7-F has a gate threshold voltage (VGS(th)) ranging from 1V to 3V, allowing for low gate drive voltages, which enhances its versatility in various applications.
Overall, the BSS84-7-F is a reliable choice for engineers looking for efficient, compact, and high-performance MOSFET solutions.
Package
The BSS84-7-F is packaged in a SOT-23 format, which is a small, surface-mount package commonly used for transistors and other semiconductor devices.
Pinout
The BSS84-7-F is a P-channel MOSFET with a pin count of 3. The pin configuration is as follows:
1. Gate (G): This pin is used to control the MOSFET. A negative voltage relative to the source (S) turns the device on.
2. Drain (D): This pin is where the load current flows out of the MOSFET.
3. Source (S): This pin is connected to the higher voltage supply when the MOSFET is in an on state.
The BSS84-7-F is typically used in low-side switching applications, level shifting, and other low-power switching functions. It has a maximum drain-source voltage (VDS) of -30V and a maximum continuous drain current (ID) of -0.5A. The device is housed in a standard SOT-23 package, making it suitable for space-constrained applications.
1. Gate (G): This pin is used to control the MOSFET. A negative voltage relative to the source (S) turns the device on.
2. Drain (D): This pin is where the load current flows out of the MOSFET.
3. Source (S): This pin is connected to the higher voltage supply when the MOSFET is in an on state.
The BSS84-7-F is typically used in low-side switching applications, level shifting, and other low-power switching functions. It has a maximum drain-source voltage (VDS) of -30V and a maximum continuous drain current (ID) of -0.5A. The device is housed in a standard SOT-23 package, making it suitable for space-constrained applications.
Manufacturer
The BSS84-7-F is manufactured by Nexperia, a semiconductor company that specializes in discrete, logic, and analog ICs. Nexperia is known for its expertise in producing high-quality semiconductor devices, including MOSFETs, diodes, and other electronic components. The company focuses on providing reliable and efficient solutions for various applications in automotive, industrial, and consumer electronics markets. Nexperia was formed from the former NXP Semiconductors' standard products division and has a strong emphasis on manufacturing efficiency and innovation.
Application
BSS84-7-F is a specification for high-performance thermal insulation materials, commonly used in aerospace, automotive, and industrial applications. Its primary areas include insulation for high-temperature components, heat shields, and thermal barriers in engines and exhaust systems. Additionally, it is utilized in electronics to manage heat dissipation and improve energy efficiency.
Equivalent
The BSS84-7-F is a N-channel MOSFET. Equivalent products include the 2N7000, BS170, and BSS138. Ensure to check specifications like voltage, current ratings, and package type to confirm compatibility for your specific application.
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