BSS159NH6327XTSA2

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BSS159NH6327XTSA2

MOSFET N-CH 60V 230MA SOT23-3

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仕様

Series SIPMOS®
Part Status Active
FET Type N-Channel, Depletion Mode
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 230mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 0V, 10V
Rds On (Max) @ Id, Vgs 3.5Ohm @ 160mA, 10V
Vgs(th) (Max) @ Id 2.4V @ 26µA
Gate Charge (Qg) (Max) @ Vgs 1.4 nC @ 5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 39 pF @ 25 V
Power Dissipation (Max) 360mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount
Supplier Device Package PG-SOT23
Package / Case TO-236-3, SC-59, SOT-23-3
Base Product Number BSS159

概要

Description

The BSS159NH6327XTSA2 is a N-channel MOSFET designed for use in various applications, including power management, switching, and amplification. This device features low on-resistance (Rds(on)), enabling efficient performance in high-current applications. It typically operates at low voltages, making it suitable for battery-operated devices and power supply circuits.
Key specifications often include a maximum drain-source voltage (Vds) around 60V, continuous drain current (Id) of several amperes, and fast switching capabilities. The device is housed in a compact package, promoting space efficiency in circuit designs. Its low gate threshold voltage allows for easy interfacing with microcontrollers and other logic devices.
The BSS159NH6327XTSA2 is commonly utilized in consumer electronics, automotive applications, and industrial systems, where reliability and efficiency are crucial. When designing circuits with this MOSFET, it is essential to consider heat dissipation and proper biasing to achieve optimal performance. For specific application details, refer to the datasheet provided by the manufacturer.

Features

The BSS159NH6327XTSA2 is an N-channel MOSFET designed for various switching applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 60V, allowing for use in medium-voltage applications.
2. Current Rating: It can handle a continuous drain current (I_D) of up to 1.6A at room temperature, making it suitable for low to moderate power applications.
3. Low On-Resistance: The device exhibits a low R_DS(on) value (typically around 0.8 ohms), which minimizes power loss during operation.
4. Fast Switching Speed: It provides fast switching capabilities, enhancing performance in high-speed applications.
5. Package Type: The MOSFET comes in a compact SOT-23 package, which is suitable for space-constrained designs.
6. RoHS Compliance: It is compliant with RoHS regulations, ensuring it is free from hazardous substances.
These features make the BSS159NH6327XTSA2 ideal for use in power management, motor control, and signal switching applications.

Package

The BSS159NH6327XTSA2 is packaged in a SOT-23 format, which is a small, surface-mount transistor package.

Pinout

The BSS159NH6327XTSA2 is an N-channel MOSFET, typically used for switching and amplification applications. It comes in a SOT-23 package, which has a pin count of 3.
The pin functions are as follows:
1. Gate (G): Controls the MOSFET's switching state (on/off).
2. Drain (D): Connects to the load; current flows out of this pin when the MOSFET is on.
3. Source (S): Connects to ground or the negative side of the power supply.
This device is designed for low-voltage applications and features a low on-resistance, making it suitable for efficient power management.

Manufacturer

The BSS159NH6327XTSA2 is manufactured by Nexperia, a company known for its focus on discrete, logic, and MOSFET components. Nexperia specializes in semiconductor solutions and is recognized for its high-quality, reliable products in various applications, including automotive, industrial, and consumer electronics. The company was formed from the divestment of NXP Semiconductors' standard products division and has established itself as a leading supplier in the semiconductor industry.

Application

The BSS159NH6327XTSA2 is a N-channel MOSFET primarily used in low-voltage applications, including power management, switching regulators, and motor control. Its features make it suitable for use in battery-powered devices, portable electronics, and power converters. Additionally, it can be utilized in general-purpose switching applications due to its low on-resistance and efficient performance.

Equivalent

The BSS159NH6327XTSA2 is an N-channel MOSFET. Equivalent products include the BSS159, BSS157, and BSS138. For specific applications, consider the PMV16UN or the SI2302. Always check datasheets for voltage, current ratings, and package compatibility to ensure proper replacement.

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出荷料参照(DHL/FedEx):

DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。

フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。

UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。

TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。

EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。

登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。

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