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BSS131H6327XTSA1
MOSFET N-CH 240V 110MA SOT23-3
- メーカー
- Mfr。パート #BSS131H6327XTSA1
- パッケージ SOT23-3
- データシート BSS131H6327XTSA1 DataSheet
- 在庫中5973
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仕様
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | SIPMOS® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 240 V |
| Current-ContinuousDrain(Id)@25°C | 110mA (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 4.5V, 10V |
| RdsOn(Max)@IdVgs | 14Ohm @ 100mA, 10V |
| Vgs(th)(Max)@Id | 1.8V @ 56µA |
| GateCharge(Qg)(Max)@Vgs | 3.1 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 77 pF @ 25 V |
| PowerDissipation(Max) | 360mW (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | PG-SOT23 |
概要
Description
The BSS131H6327XTSA1 is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for low-voltage applications. It features a maximum drain-source voltage of 30V and can handle continuous drain current up to 1.4A. This MOSFET is notable for its low on-resistance, which enhances efficiency by reducing power loss during operation. Its compact package makes it suitable for space-constrained designs in various electronic devices, including power management, switching applications, and signal amplification. The BSS131H6327XTSA1 is commonly used in consumer electronics, automotive, and industrial applications. Its reliability and performance make it a popular choice among engineers and designers in the semiconductor market.
Features
The BSS131H6327XTSA1 is an N-channel MOSFET designed for various applications, including switching and amplification. Key features include:
1. Voltage Rating: Supports a drain-source voltage (V_DS) of up to 60V.
2. Continuous Drain Current: Provides a continuous drain current (I_D) of approximately 2.4A, making it suitable for medium-power applications.
3. Low Gate Threshold Voltage: Features a gate threshold voltage (V_GS(th)) of 0.8V to 2V, allowing for efficient low-voltage operation.
4. Low On-resistance: Exhibits low R_DS(on) values (around 0.5 ohm at V_GS = 10V), minimizing power loss during operation.
5. Fast Switching Speed: Designed for rapid switching capabilities, suitable for high-frequency applications.
6. Package Type: Typically offered in a surface-mount package, facilitating easy integration into PCB designs.
These characteristics make the BSS131H6327XTSA1 ideal for applications in power management, motor control, and switching regulators.
1. Voltage Rating: Supports a drain-source voltage (V_DS) of up to 60V.
2. Continuous Drain Current: Provides a continuous drain current (I_D) of approximately 2.4A, making it suitable for medium-power applications.
3. Low Gate Threshold Voltage: Features a gate threshold voltage (V_GS(th)) of 0.8V to 2V, allowing for efficient low-voltage operation.
4. Low On-resistance: Exhibits low R_DS(on) values (around 0.5 ohm at V_GS = 10V), minimizing power loss during operation.
5. Fast Switching Speed: Designed for rapid switching capabilities, suitable for high-frequency applications.
6. Package Type: Typically offered in a surface-mount package, facilitating easy integration into PCB designs.
These characteristics make the BSS131H6327XTSA1 ideal for applications in power management, motor control, and switching regulators.
Package
The BSS131H6327XTSA1 is a N-channel MOSFET packaged in a SOT-23 form factor.
Pinout
The BSS131H6327XTSA1 is an N-channel MOSFET that typically comes in a SOT-23 package with a pin count of 3. The pin configuration and functions are as follows:
1. Gate (G): This is the control terminal used to turn the MOSFET on and off. Applying a voltage to the gate allows current to flow from the drain to the source.
2. Drain (D): This terminal is where the current flows out when the MOSFET is in the "on" state.
3. Source (S): This terminal is where the current enters the MOSFET when it is conducting.
The BSS131 is often used in switching applications, level shifting, and as an electronic switch in various circuits due to its low on-resistance and fast switching capabilities.
1. Gate (G): This is the control terminal used to turn the MOSFET on and off. Applying a voltage to the gate allows current to flow from the drain to the source.
2. Drain (D): This terminal is where the current flows out when the MOSFET is in the "on" state.
3. Source (S): This terminal is where the current enters the MOSFET when it is conducting.
The BSS131 is often used in switching applications, level shifting, and as an electronic switch in various circuits due to its low on-resistance and fast switching capabilities.
Manufacturer
The BSS131H6327XTSA1 is manufactured by Nexperia, a global semiconductor company. Nexperia specializes in discrete, logic, and MOSFET components, providing a wide range of semiconductor solutions for various applications including automotive, industrial, and consumer electronics. The company is known for its expertise in manufacturing high-quality semiconductor devices and is a spin-off from NXP Semiconductors. Nexperia focuses on efficiency, quality, and reliability in its product offerings, catering to the growing demands of the electronics market.
Application
The BSS131H6327XTSA1 is an N-channel MOSFET primarily used in various applications including power management, switching circuits, and signal amplification. Its features make it suitable for low-voltage applications in consumer electronics, automotive systems, and portable devices. It is also utilized in LED drivers, DC-DC converters, and other electronic circuits requiring efficient switching and low on-resistance.
Equivalent
The BSS131H6327XTSA1 is an N-channel MOSFET. Equivalent products include BSS138, 2N7000, and IRLML2502. Ensure to verify specifications like voltage ratings, current ratings, and Rds(on) to confirm compatibility for your specific application.
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