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BSP75NHUMA1
IC PWR SWTCH N-CHAN 1:1 SOT223-4
- メーカー
- Mfr。パート #BSP75NHUMA1
- パッケージ TO-261-4,TO-261AA
- データシート BSP75NHUMA1 DataSheet
- 在庫中6172
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仕様
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | HITFET® |
| ProductStatus | Active |
| SwitchType | General Purpose |
| NumberofOutputs | 1 |
| Ratio-Input:Output | 1:1 |
| OutputConfiguration | Low Side |
| OutputType | N-Channel |
| Interface | On/Off |
| Voltage-Load | 60V (Max) |
| Voltage-Supply(Vcc/Vdd) | Not Required |
| Current-Output(Max) | 700mA |
| RdsOn(Typ) | 430mOhm |
| InputType | Non-Inverting |
| Features | Auto Restart |
| FaultProtection | Current Limiting (Fixed), Over Temperature, Over Voltage |
| OperatingTemperature | -40°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | PG-SOT223-4 |
概要
Description
The BSP75NHUMA1 is a P-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) produced by Infineon Technologies. It is designed for use in various electronic applications, such as power management and switching. This MOSFET is housed in a small SOT-223 package, making it suitable for compact circuit designs.
Key features of the BSP75NHUMA1 include a low on-resistance and fast switching speeds, which improve efficiency and reduce power loss. It operates at a maximum drain-source voltage (V_ds) of -60V and can handle a continuous drain current (I_d) of up to -0.7A, which makes it suitable for low to medium power applications. The device is often used in automotive, industrial, and consumer electronics where space and efficiency are critical.
The BSP75NHUMA1 is known for its reliability and performance under various operating conditions. It is ideal for use in battery-powered devices, DC-DC converters, and load switch applications. Its robust design ensures consistent performance, making it a popular choice among engineers and designers.
Key features of the BSP75NHUMA1 include a low on-resistance and fast switching speeds, which improve efficiency and reduce power loss. It operates at a maximum drain-source voltage (V_ds) of -60V and can handle a continuous drain current (I_d) of up to -0.7A, which makes it suitable for low to medium power applications. The device is often used in automotive, industrial, and consumer electronics where space and efficiency are critical.
The BSP75NHUMA1 is known for its reliability and performance under various operating conditions. It is ideal for use in battery-powered devices, DC-DC converters, and load switch applications. Its robust design ensures consistent performance, making it a popular choice among engineers and designers.
Features
The BSP75NHUMA1 is an N-channel power MOSFET (metal-oxide-semiconductor field-effect transistor) known for its efficiency in switching applications. Here are its key features:
1. Voltage and Current Ratings: It operates with a drain-source voltage (V_DS) of 60V and can handle continuous drain current (I_D) up to 0.2A.
2. R_DS(on): The on-state resistance is typically low, which helps in reducing power loss and improving efficiency, crucial for switching applications.
3. Package Type: It is typically housed in a compact SOT-23 package, making it suitable for space-constrained applications.
4. Gate Threshold Voltage: The gate threshold voltage is designed for compatibility with various logic levels, allowing for easy interfacing with microcontrollers or other logic circuits.
5. Applications: Commonly used in applications such as load switching, battery-powered devices, and other areas requiring efficient power management.
6. Thermal Performance: It has specifications for maximum junction temperature and thermal resistance, ensuring reliability under appropriate usage conditions.
These features make the BSP75NHUMA1 a versatile component in low-power, high-efficiency electronic designs.
1. Voltage and Current Ratings: It operates with a drain-source voltage (V_DS) of 60V and can handle continuous drain current (I_D) up to 0.2A.
2. R_DS(on): The on-state resistance is typically low, which helps in reducing power loss and improving efficiency, crucial for switching applications.
3. Package Type: It is typically housed in a compact SOT-23 package, making it suitable for space-constrained applications.
4. Gate Threshold Voltage: The gate threshold voltage is designed for compatibility with various logic levels, allowing for easy interfacing with microcontrollers or other logic circuits.
5. Applications: Commonly used in applications such as load switching, battery-powered devices, and other areas requiring efficient power management.
6. Thermal Performance: It has specifications for maximum junction temperature and thermal resistance, ensuring reliability under appropriate usage conditions.
These features make the BSP75NHUMA1 a versatile component in low-power, high-efficiency electronic designs.
Package
The BSP75NHUMA1 is housed in a SOT-223 package.
Pinout
The BSP75NHUMA1 is a power MOSFET transistor manufactured by Infineon Technologies. It has a total of 4 pins. The pin configuration is as follows:
1. Pin 1 (IN): This is the input pin used to control the gate of the MOSFET.
2. Pin 2 (OUT): This is the output pin connected to the drain of the MOSFET.
3. Pin 3 (GND): This is the ground pin connected to the source of the MOSFET.
4. Pin 4 (VBB): This is the supply voltage pin.
The BSP75NHUMA1 is designed for high-side switching applications and is commonly used in automotive and industrial applications. It features a logic-level gate, making it compatible with low-voltage microcontrollers and logic circuits. The device is known for its low on-state resistance, providing efficient performance in switching applications.
1. Pin 1 (IN): This is the input pin used to control the gate of the MOSFET.
2. Pin 2 (OUT): This is the output pin connected to the drain of the MOSFET.
3. Pin 3 (GND): This is the ground pin connected to the source of the MOSFET.
4. Pin 4 (VBB): This is the supply voltage pin.
The BSP75NHUMA1 is designed for high-side switching applications and is commonly used in automotive and industrial applications. It features a logic-level gate, making it compatible with low-voltage microcontrollers and logic circuits. The device is known for its low on-state resistance, providing efficient performance in switching applications.
Manufacturer
The BSP75NHUMA1 is manufactured by Infineon Technologies. Infineon is a German semiconductor manufacturer that produces a wide range of products, including automotive systems, power management, industrial electronics, and security solutions. The company is known for its expertise in developing innovative semiconductor technologies that contribute to energy efficiency, mobility, and security in electronic devices.
Application
The BSP75NHUMA1 is a N-channel MOSFET commonly used in various electronic applications. Its primary application areas include DC-DC converters, power management systems, motor control circuits, and switching regulators. It is also suitable for load switching in consumer electronics, automotive circuits, and industrial automation systems due to its low on-resistance and efficient switching capabilities. Additionally, it's often used in applications requiring high-speed switching and low power loss.
Equivalent
The BSP75NHUMA1 is a MOSFET transistor. Equivalent or similar products include the NXP PMN45EN, Vishay SI2302DS, and ON Semiconductor NTR4003N, among others. When selecting an equivalent, ensure that the key parameters such as voltage rating, current handling, RDS(on), and package type match your application requirements. Always consult the datasheets for compatibility.
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