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BSM25GD120DN2
IGBT Modules 1200V 25A FL BRIDGE
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- Mfr。パート #BSM25GD120DN2
- パッケージ
- データシート BSM25GD120DN2 DataSheet
- 在庫中3081
100% オリジナル &新しい
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365日の保証
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仕様
| Packaging | Tray |
| Standard Pack Qty | 10 |
概要
Description
The BSM25GD120DN2 is a silicon carbide (SiC) MOSFET designed for high-efficiency power applications. It features a voltage rating of 1200V and a continuous current rating of 25A, making it suitable for use in power converters, inverters, and industrial motor drives. SiC technology allows for higher switching frequencies and reduced energy losses compared to traditional silicon devices, leading to enhanced performance and efficiency.
Key characteristics include low on-resistance, high thermal conductivity, and excellent thermal stability, which enable the device to operate effectively at elevated temperatures. The BSM25GD120DN2 is particularly useful in applications such as renewable energy systems (like solar inverters), electric vehicle charging, and energy storage systems.
Its robust construction and reliability make it a preferred choice for engineers looking to improve the efficiency and performance of their power electronics designs.
Key characteristics include low on-resistance, high thermal conductivity, and excellent thermal stability, which enable the device to operate effectively at elevated temperatures. The BSM25GD120DN2 is particularly useful in applications such as renewable energy systems (like solar inverters), electric vehicle charging, and energy storage systems.
Its robust construction and reliability make it a preferred choice for engineers looking to improve the efficiency and performance of their power electronics designs.
Features
The BSM25GD120DN2 is a 1200V, 25A IGBT (Insulated Gate Bipolar Transistor) module designed for high-efficiency power applications. Key features include:
1. Voltage Rating: 1200V, suitable for medium voltage applications.
2. Current Rating: 25A, optimized for industrial drives and power converters.
3. Low On-State Voltage: Ensures efficient operation and reduced power losses.
4. Fast Switching Speed: Enhances performance in switching applications.
5. Thermal Performance: Features a robust thermal design for effective heat dissipation.
6. Integrated Diodes: Built-in freewheeling diodes provide efficient reverse recovery.
7. Compact Design: Facilitates easy integration into various systems.
8. Reliability: Designed for long operational life in demanding environments.
This module is ideal for applications like motor drives, renewable energy systems, and other power electronics requiring efficient control.
1. Voltage Rating: 1200V, suitable for medium voltage applications.
2. Current Rating: 25A, optimized for industrial drives and power converters.
3. Low On-State Voltage: Ensures efficient operation and reduced power losses.
4. Fast Switching Speed: Enhances performance in switching applications.
5. Thermal Performance: Features a robust thermal design for effective heat dissipation.
6. Integrated Diodes: Built-in freewheeling diodes provide efficient reverse recovery.
7. Compact Design: Facilitates easy integration into various systems.
8. Reliability: Designed for long operational life in demanding environments.
This module is ideal for applications like motor drives, renewable energy systems, and other power electronics requiring efficient control.
Package
The BSM25GD120DN2 is packaged in a DPAK (also known as TO-252) format. This package type is designed for surface mounting and provides good thermal performance for power semiconductor applications.
Pinout
The BSM25GD120DN2 is a 25A, 1200V silicon carbide (SiC) MOSFET module produced by Bosch. It features a total of 6 pins. The pin configuration includes:
1. Gate (G): Controls the switching of the device.
2. Source (S): Connected to the source terminal of the MOSFET.
3. Drain (D): Connected to the drain terminal where the load is attached.
4. Thermal pad (T): Used for heat dissipation.
The BSM25GD120DN2 is designed for high-efficiency power applications, especially in the automotive and industrial sectors, such as inverters and converters. Its SiC technology enables higher switching frequencies and better thermal performance compared to traditional silicon devices.
1. Gate (G): Controls the switching of the device.
2. Source (S): Connected to the source terminal of the MOSFET.
3. Drain (D): Connected to the drain terminal where the load is attached.
4. Thermal pad (T): Used for heat dissipation.
The BSM25GD120DN2 is designed for high-efficiency power applications, especially in the automotive and industrial sectors, such as inverters and converters. Its SiC technology enables higher switching frequencies and better thermal performance compared to traditional silicon devices.
Manufacturer
The BSM25GD120DN2 is manufactured by Infineon Technologies AG, a German semiconductor manufacturer. Infineon specializes in automotive, industrial power control, and security technologies. The company focuses on producing a wide range of semiconductor products, including power semiconductors, microcontrollers, and sensors, catering to various sectors such as automotive, industrial automation, and consumer electronics. Infineon is recognized for its innovations in energy efficiency and power management solutions.
Application
The BSM25GD120DN2 is a 1200V, 25A IGBT module commonly used in industrial applications such as motor drives, inverters for renewable energy systems (solar, wind), uninterruptible power supplies (UPS), and induction heating. Its high efficiency and thermal performance make it suitable for power electronics in electric vehicles and traction applications as well.
Equivalent
The BSM25GD120DN2 is a 25A, 1200V IGBT module. Equivalent products include:
1. IGBT Modules:
- BSM25GD120DN1
- BSM25GD120D
- FZ1200R25KE3 (Infineon)
- CM200DY-24H (Mitsubishi)
Check datasheets for specifics on electrical characteristics to ensure compatibility.
1. IGBT Modules:
- BSM25GD120DN1
- BSM25GD120D
- FZ1200R25KE3 (Infineon)
- CM200DY-24H (Mitsubishi)
Check datasheets for specifics on electrical characteristics to ensure compatibility.
出荷
出荷方法私たち
DHL、FedEx、TNT、UPS、またはあなたの選択の他の運送業者を通じてグローバルな出荷サービスを提供します。
出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
支払い
Payment Methods
支払い期間は100%前払いです。
現在、下記の支払い方法のみを受け入れています。:
1. ペイパル
2. クレジット・デビットカード
3. ワイヤー 転送
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