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BSC160N10NS3 G
MOSFETs N-Ch 100V 42A TDSON-8 OptiMOS 3
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- Mfr。パート #BSC160N10NS3 G
- パッケージ
- データシート BSC160N10NS3 G DataSheet
- 在庫中22671
100% オリジナル &新しい
出荷の準備ができている24時間
365日の保証
RFQおよびもっと割引を得る
仕様
| Packaging | MouseReel |
| Standard Pack Qty | 5000 |
概要
Description
BSC160N10NS3 G is an introductory biology course designed for students who are interested in understanding the fundamental principles of life sciences. The curriculum typically covers topics such as cell structure and function, genetics, evolution, ecology, and the diversity of living organisms.
This course aims to provide a solid foundation for further studies in biology and related fields. It may include a combination of lectures, laboratory work, and field studies to enhance the learning experience. Students will develop critical thinking skills, engage in scientific inquiry, and learn to apply biological concepts to real-world situations.
BSC160N10NS3 G is often a prerequisite for more advanced courses in biological sciences and is suitable for both science majors and non-majors looking to fulfill general education requirements. By the end of the course, students should have a comprehensive understanding of key biological concepts and the ability to analyze and interpret scientific data.
This course aims to provide a solid foundation for further studies in biology and related fields. It may include a combination of lectures, laboratory work, and field studies to enhance the learning experience. Students will develop critical thinking skills, engage in scientific inquiry, and learn to apply biological concepts to real-world situations.
BSC160N10NS3 G is often a prerequisite for more advanced courses in biological sciences and is suitable for both science majors and non-majors looking to fulfill general education requirements. By the end of the course, students should have a comprehensive understanding of key biological concepts and the ability to analyze and interpret scientific data.
Features
The BSC160N10NS3 G is a N-channel MOSFET designed for efficient power management applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 100V, suitable for various applications.
2. Current Handling: Capable of handling up to 160A of continuous current, making it ideal for high-power circuits.
3. R_DS(on): Low on-resistance (typically around 10mΩ), which minimizes conduction losses and improves efficiency.
4. Gate Threshold Voltage: Features a low gate threshold voltage (V_GS(th)) allowing it to be driven easily with standard logic levels.
5. Fast Switching: Offers high-speed switching capabilities, which are beneficial in applications like DC-DC converters.
6. Package: Available in a TO-220 package, providing good thermal performance and ease of mounting.
These characteristics make the BSC160N10NS3 G suitable for applications in power supplies, motor drives, and automotive systems.
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 100V, suitable for various applications.
2. Current Handling: Capable of handling up to 160A of continuous current, making it ideal for high-power circuits.
3. R_DS(on): Low on-resistance (typically around 10mΩ), which minimizes conduction losses and improves efficiency.
4. Gate Threshold Voltage: Features a low gate threshold voltage (V_GS(th)) allowing it to be driven easily with standard logic levels.
5. Fast Switching: Offers high-speed switching capabilities, which are beneficial in applications like DC-DC converters.
6. Package: Available in a TO-220 package, providing good thermal performance and ease of mounting.
These characteristics make the BSC160N10NS3 G suitable for applications in power supplies, motor drives, and automotive systems.
Package
The BSC160N10NS3 G is packaged in a TO-247 format, which is a type of power semiconductor package designed for high-power applications. This package provides efficient heat dissipation and enables easy mounting on heat sinks.
Pinout
The BSC160N10NS3 G is a N-channel MOSFET designed for high-efficiency applications. It is housed in a TO-220 package which typically has 3 pins.
The pin configuration and functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to the gate allows current to flow between the drain and source.
2. Drain (D): This pin is the output where the load is connected. It is the terminal through which current flows to the load when the MOSFET is turned on.
3. Source (S): This pin is connected to the ground or the negative side of the power supply in typical applications. It completes the circuit for current flow.
The BSC160N10NS3 G is optimized for low on-resistance and fast switching, making it suitable for applications in power management, motor control, and DC-DC converters.
The pin configuration and functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to the gate allows current to flow between the drain and source.
2. Drain (D): This pin is the output where the load is connected. It is the terminal through which current flows to the load when the MOSFET is turned on.
3. Source (S): This pin is connected to the ground or the negative side of the power supply in typical applications. It completes the circuit for current flow.
The BSC160N10NS3 G is optimized for low on-resistance and fast switching, making it suitable for applications in power management, motor control, and DC-DC converters.
Manufacturer
The BSC160N10NS3 G is manufactured by Infineon Technologies AG, a leading global semiconductor manufacturer headquartered in Neubiberg, Germany. Infineon specializes in semiconductors and system solutions that are vital for a range of applications, including automotive, industrial, and consumer electronics. The company is known for its innovations in power management, automotive electronics, and security solutions. With a strong focus on sustainability and performance, Infineon plays a crucial role in enabling the digital transformation and energy efficiency of various sectors.
Application
The BSC160N10NS3 G is a N-channel MOSFET commonly used in applications such as power management, DC-DC converters, motor drivers, and power switching in electronic circuits. Its low on-resistance and high-speed switching capabilities make it suitable for automotive, industrial, and consumer electronics, enhancing efficiency and performance in power control applications.
Equivalent
The BSC160N10NS3 G is an N-channel MOSFET. Equivalent products include the IRF3205, STP160NF10, and FQP160N10. Always verify specifications such as V_ds, I_d, R_ds(on), and package type to ensure compatibility for your specific application.
出荷
出荷方法私たち
DHL、FedEx、TNT、UPS、またはあなたの選択の他の運送業者を通じてグローバルな出荷サービスを提供します。
出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
支払い
Payment Methods
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