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BSC110N06NS3 G
MOSFETs N-Ch 60V 50A TDSON-8 OptiMOS 3
- メーカー
- Mfr。パート #BSC110N06NS3 G
- パッケージ
- データシート BSC110N06NS3 G DataSheet
- 在庫中21000
100% オリジナル &新しい
出荷の準備ができている24時間
365日の保証
RFQおよびもっと割引を得る
仕様
| Packaging | MouseReel |
| Standard Pack Qty | 5000 |
概要
Description
BSC110N06NS3 G is an introductory course in biological sciences, typically aimed at first-year students. The course covers fundamental concepts in biology, including cellular structure and function, genetics, evolution, ecosystems, and the diversity of life. Emphasis is often placed on scientific inquiry, experimentation, and critical thinking.
Students can expect a combination of lectures, laboratory work, and discussions to enhance their understanding of biological principles. The course may also explore the relevance of biology in real-world contexts, such as health, environment, and technology.
Prerequisites usually include basic high school biology or equivalent knowledge. Successful completion of this course provides a solid foundation for further studies in biology and related fields. It is beneficial for students pursuing degrees in health sciences, environmental studies, and education, among others.
Students can expect a combination of lectures, laboratory work, and discussions to enhance their understanding of biological principles. The course may also explore the relevance of biology in real-world contexts, such as health, environment, and technology.
Prerequisites usually include basic high school biology or equivalent knowledge. Successful completion of this course provides a solid foundation for further studies in biology and related fields. It is beneficial for students pursuing degrees in health sciences, environmental studies, and education, among others.
Features
The BSC110N06NS3 G is a N-channel MOSFET designed for various electronic applications. Key features include:
1. Voltage Rating: It can handle a maximum drain-source voltage (Vds) of 60V, making it suitable for medium voltage applications.
2. Current Handling: It supports a continuous drain current (Id) of up to 110A, allowing it to drive high loads effectively.
3. Low Rds(on): The device features a low on-resistance (Rds(on)) of approximately 10 mΩ at 10V gate voltage, which minimizes power losses during operation.
4. Fast Switching: The MOSFET provides rapid switching capabilities, making it ideal for applications requiring high efficiency in power conversion.
5. Thermal Performance: Designed with a TO-220 package, it offers good thermal dissipation, allowing for higher power handling without overheating.
6. Gate Threshold Voltage: The threshold voltage is typically around 2-4V, facilitating compatibility with various control circuits.
These features make the BSC110N06NS3 G suitable for applications like motor control, power supplies, and DC-DC converters.
1. Voltage Rating: It can handle a maximum drain-source voltage (Vds) of 60V, making it suitable for medium voltage applications.
2. Current Handling: It supports a continuous drain current (Id) of up to 110A, allowing it to drive high loads effectively.
3. Low Rds(on): The device features a low on-resistance (Rds(on)) of approximately 10 mΩ at 10V gate voltage, which minimizes power losses during operation.
4. Fast Switching: The MOSFET provides rapid switching capabilities, making it ideal for applications requiring high efficiency in power conversion.
5. Thermal Performance: Designed with a TO-220 package, it offers good thermal dissipation, allowing for higher power handling without overheating.
6. Gate Threshold Voltage: The threshold voltage is typically around 2-4V, facilitating compatibility with various control circuits.
These features make the BSC110N06NS3 G suitable for applications like motor control, power supplies, and DC-DC converters.
Package
The BSC110N06NS3 G is packaged in a TO-220 form factor. This package type allows for efficient heat dissipation and is commonly used for power MOSFETs in various applications.
Pinout
The BSC110N06NS3 G is a power MOSFET designed for various switching applications. It features a TO-220 package with a pin count of 3.
The pin functions are as follows:
1. Gate (G): This pin controls the switching of the MOSFET by applying voltage; when a sufficient voltage is applied, it allows current to flow between the drain and source.
2. Drain (D): This pin connects to the load and carries the output current. It is the terminal through which the main current flows when the MOSFET is turned on.
3. Source (S): This pin is connected to the ground or the negative side of the power supply. It is the terminal where the current exits the MOSFET when switched on.
The BSC110N06NS3 G is noted for its low on-resistance and high-speed switching capabilities, making it suitable for high-efficiency applications.
The pin functions are as follows:
1. Gate (G): This pin controls the switching of the MOSFET by applying voltage; when a sufficient voltage is applied, it allows current to flow between the drain and source.
2. Drain (D): This pin connects to the load and carries the output current. It is the terminal through which the main current flows when the MOSFET is turned on.
3. Source (S): This pin is connected to the ground or the negative side of the power supply. It is the terminal where the current exits the MOSFET when switched on.
The BSC110N06NS3 G is noted for its low on-resistance and high-speed switching capabilities, making it suitable for high-efficiency applications.
Manufacturer
The BSC110N06NS3 G is manufactured by Infineon Technologies AG, a leading global semiconductor manufacturer. Infineon specializes in producing a wide range of semiconductor solutions, including power semiconductors, microcontrollers, sensors, and security technologies. The company focuses on various sectors, such as automotive, industrial, and consumer electronics, and is known for its commitment to innovation and sustainability in semiconductor technology. Infineon is headquartered in Neubiberg, Germany, and operates internationally, serving a diverse customer base with high-performance products.
Application
The BSC110N06NS3 G is a N-channel MOSFET commonly used in power management applications. Its application areas include DC-DC converters, motor drivers, load switching, and power supply circuits. It is also utilized in consumer electronics, renewable energy systems, and industrial automation for efficient energy control and switching.
Equivalent
The BSC110N06NS3 G chip is a N-channel MOSFET. Equivalent products include:
1. STP110N06-2
2. IRF110N06
3. FDB110N06
4. AOD110N06
Always verify specific electrical characteristics and package types to ensure compatibility in your application.
1. STP110N06-2
2. IRF110N06
3. FDB110N06
4. AOD110N06
Always verify specific electrical characteristics and package types to ensure compatibility in your application.
出荷
出荷方法私たち
DHL、FedEx、TNT、UPS、またはあなたの選択の他の運送業者を通じてグローバルな出荷サービスを提供します。
出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
支払い
Payment Methods
支払い期間は100%前払いです。
現在、下記の支払い方法のみを受け入れています。:
1. ペイパル
2. クレジット・デビットカード
3. ワイヤー 転送
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