画像は参照用のみです。
BSC067N06LS3 G
MOSFETs N-Ch 60V 50A TDSON-8 OptiMOS 3
- メーカー
- Mfr。パート #BSC067N06LS3 G
- パッケージ
- データシート BSC067N06LS3 G DataSheet
- 在庫中4424
100% オリジナル &新しい
出荷の準備ができている24時間
365日の保証
RFQおよびもっと割引を得る
仕様
| Packaging | MouseReel |
| Standard Pack Qty | 5000 |
概要
Description
BSC067N06LS3 G is a specific model of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by STMicroelectronics. It features an N-channel configuration, which allows it to conduct current when a positive voltage is applied to the gate relative to the source. This transistor is designed for high-efficiency switching applications, making it suitable for power management, motor control, and various electronic circuits.
Key specifications often include a maximum drain-source voltage (V_DS), continuous drain current (I_D), and on-resistance (R_DS(on)), which determine its performance in different applications. The part number indicates specific characteristics such as packaging and threshold voltage ranges. This MOSFET is typically utilized in consumer electronics, automotive applications, and industrial systems due to its reliability and efficiency.
For detailed specifications, reference the manufacturer's datasheet, which provides critical information on electrical characteristics, thermal performance, and recommended operating conditions.
Key specifications often include a maximum drain-source voltage (V_DS), continuous drain current (I_D), and on-resistance (R_DS(on)), which determine its performance in different applications. The part number indicates specific characteristics such as packaging and threshold voltage ranges. This MOSFET is typically utilized in consumer electronics, automotive applications, and industrial systems due to its reliability and efficiency.
For detailed specifications, reference the manufacturer's datasheet, which provides critical information on electrical characteristics, thermal performance, and recommended operating conditions.
Features
The BSC067N06LS3 G is a N-channel MOSFET from Infineon Technologies, designed for power applications. Key features include:
1. Voltage Rating: It has a drain-source breakdown voltage (V_DS) of 60V, making it suitable for medium-voltage applications.
2. Current Rating: The continuous drain current (I_D) is up to 67A, allowing for high-load capacity.
3. Low R_DS(on): It offers a low on-resistance (R_DS(on)) of around 7.6 mΩ, which enhances efficiency by reducing power loss during operation.
4. Fast Switching: The device features a fast switching capability, which is beneficial for applications requiring rapid turn-on and turn-off cycles.
5. Package Type: The MOSFET is typically available in a TO-220 package, facilitating easy heat dissipation and mounting.
6. Applications: Commonly used in power supplies, motor control, and automotive applications.
These features make the BSC067N06LS3 G a reliable choice for various power management solutions.
1. Voltage Rating: It has a drain-source breakdown voltage (V_DS) of 60V, making it suitable for medium-voltage applications.
2. Current Rating: The continuous drain current (I_D) is up to 67A, allowing for high-load capacity.
3. Low R_DS(on): It offers a low on-resistance (R_DS(on)) of around 7.6 mΩ, which enhances efficiency by reducing power loss during operation.
4. Fast Switching: The device features a fast switching capability, which is beneficial for applications requiring rapid turn-on and turn-off cycles.
5. Package Type: The MOSFET is typically available in a TO-220 package, facilitating easy heat dissipation and mounting.
6. Applications: Commonly used in power supplies, motor control, and automotive applications.
These features make the BSC067N06LS3 G a reliable choice for various power management solutions.
Package
The BSC067N06LS3 G is packaged in a TO-220 form factor, which is a popular type of power package known for its effective thermal management and ease of mounting. This package is commonly used for power MOSFETs in various applications.
Pinout
The BSC067N06LS3 G is a N-channel MOSFET produced by Infineon Technologies. It features a total of 5 pins. The pin functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied here turns the device on or off.
2. Drain (D): This is the output pin where the load is connected. It allows current to flow when the MOSFET is turned on.
3. Source (S): This pin is connected to ground in typical applications. It completes the circuit for current flow when the device is active.
4. Body Diode: This internal feature allows current to flow in the reverse direction, providing protection against reverse polarity in some applications (not a pin, but an important characteristic).
5. Thermal Pad: Although not a pin, the thermal pad on the bottom aids in heat dissipation.
The BSC067N06LS3 G is known for its low on-resistance and high efficiency, making it suitable for various power management applications.
1. Gate (G): This pin is used to control the MOSFET. A voltage applied here turns the device on or off.
2. Drain (D): This is the output pin where the load is connected. It allows current to flow when the MOSFET is turned on.
3. Source (S): This pin is connected to ground in typical applications. It completes the circuit for current flow when the device is active.
4. Body Diode: This internal feature allows current to flow in the reverse direction, providing protection against reverse polarity in some applications (not a pin, but an important characteristic).
5. Thermal Pad: Although not a pin, the thermal pad on the bottom aids in heat dissipation.
The BSC067N06LS3 G is known for its low on-resistance and high efficiency, making it suitable for various power management applications.
Manufacturer
The BSC067N06LS3 G is manufactured by Infineon Technologies AG, a German semiconductor manufacturer. Infineon specializes in designing and producing a wide range of semiconductor solutions, including power semiconductors, automotive electronics, and microcontrollers. The company focuses on areas such as energy efficiency, mobility, and security, catering to various industries including automotive, industrial, and consumer electronics. Infineon is recognized for its innovation and commitment to advancing technology in these sectors.
Application
The BSC067N06LS3 G is a N-channel MOSFET primarily used in power management applications, including DC-DC converters, motor control, and power supply circuits. Its low R_DS(on) reduces conduction losses, making it suitable for high-efficiency designs in consumer electronics, renewable energy systems, and electric vehicles. Additionally, it can be employed in switching applications where fast response times are crucial.
Equivalent
The BSC067N06LS3 G is a N-channel MOSFET from Infineon. Equivalent products include the IRF540, STP55NF06, and FDG628N. Always verify specifications like voltage, current ratings, and on-resistance to ensure compatibility in your application.
出荷
出荷方法私たち
DHL、FedEx、TNT、UPS、またはあなたの選択の他の運送業者を通じてグローバルな出荷サービスを提供します。
出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
支払い
Payment Methods
支払い期間は100%前払いです。
現在、下記の支払い方法のみを受け入れています。:
1. ペイパル
2. クレジット・デビットカード
3. ワイヤー 転送
類似
-
MX25V1635FZNI
Macronix
-
MX25V16066M1I02
Macronix
-
MX30LF2G28AD-TI
Macronix
-
MX25R6435FBDIL0
Macronix
-
MX25L25673GMI-08G
Macronix
-
MX25L25673GMI-10G
Macronix
-
MX25U25643GZNI00
Macronix
-
MX25L12833FM2I-10..
Macronix
-
MX25L12835FZ2I-10..
Macronix
-
MX29F040CQI-70G
Macronix
-
MX29F800CBTI-70G
Macronix
-
MX25L1006EMI-10G
Macronix