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BSC059N04LS G
MOSFETs N-Ch 40V 73A TDSON-8 OptiMOS 3
- メーカー
- Mfr。パート #BSC059N04LS G
- パッケージ
- データシート BSC059N04LS G DataSheet
- 在庫中12937
100% オリジナル &新しい
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仕様
| Packaging | MouseReel |
| Standard Pack Qty | 5000 |
概要
Description
BSC059N04LS G is likely a course code for a specific academic program, possibly within a biological sciences curriculum. This course may cover foundational topics in biology, including cellular processes, genetics, ecology, and evolution. It aims to provide students with a comprehensive understanding of biological principles, laboratory techniques, and critical thinking skills necessary for further studies or careers in science-related fields. The "N04" could indicate a specific module or semester, while "LS" might refer to "Life Sciences." The inclusion of "G" could signify the course's designation as a general education requirement or its level of rigor. Students can expect lectures, hands-on lab work, and assessments designed to evaluate their grasp of the material. Overall, the course is structured to engage students in the exploration of life sciences and their applications.
Features
The BSC059N04LS G is a N-channel MOSFET designed for efficient power management applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 40V, making it suitable for medium-voltage applications.
2. Current Rating: The device can handle up to 59A of continuous drain current, ensuring robust performance under load.
3. Low R_DS(on): It offers a low on-resistance (R_DS(on)) of approximately 4.5 mΩ, which minimizes power losses and improves efficiency.
4. Fast Switching Speed: The MOSFET provides rapid switching capabilities, making it ideal for high-frequency applications.
5. Thermal Management: It features a compact TO-220 package, allowing efficient heat dissipation.
6. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) is low, facilitating easy drive requirements.
Overall, the BSC059N04LS G is suitable for applications in power supplies, motor drivers, and renewable energy systems where efficiency and thermal performance are critical.
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 40V, making it suitable for medium-voltage applications.
2. Current Rating: The device can handle up to 59A of continuous drain current, ensuring robust performance under load.
3. Low R_DS(on): It offers a low on-resistance (R_DS(on)) of approximately 4.5 mΩ, which minimizes power losses and improves efficiency.
4. Fast Switching Speed: The MOSFET provides rapid switching capabilities, making it ideal for high-frequency applications.
5. Thermal Management: It features a compact TO-220 package, allowing efficient heat dissipation.
6. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) is low, facilitating easy drive requirements.
Overall, the BSC059N04LS G is suitable for applications in power supplies, motor drivers, and renewable energy systems where efficiency and thermal performance are critical.
Package
The BSC059N04LS G is typically available in a TO-220 package type. This package provides effective thermal performance and is suitable for power applications.
Pinout
The BSC059N04LS G is an N-channel MOSFET designed for power applications. It features a total of 5 pins, which serve the following functions:
1. Gate (G) - This pin controls the MOSFET's switching operation. Applying a voltage to the gate allows current to flow between the drain and source.
2. Source (S) - This is the terminal where the current exits the MOSFET. It is typically connected to ground or the lower potential in a circuit.
3. Drain (D) - This pin is where the current enters the MOSFET. It connects to the load or higher potential in the circuit.
Additionally, the BSC059N04LS G is designed for applications involving high efficiency, such as in power management and switching power supplies. It can handle high voltage and current levels, making it suitable for various electronic applications.
For precise pin configuration and detailed specifications, refer to the manufacturer's datasheet.
1. Gate (G) - This pin controls the MOSFET's switching operation. Applying a voltage to the gate allows current to flow between the drain and source.
2. Source (S) - This is the terminal where the current exits the MOSFET. It is typically connected to ground or the lower potential in a circuit.
3. Drain (D) - This pin is where the current enters the MOSFET. It connects to the load or higher potential in the circuit.
Additionally, the BSC059N04LS G is designed for applications involving high efficiency, such as in power management and switching power supplies. It can handle high voltage and current levels, making it suitable for various electronic applications.
For precise pin configuration and detailed specifications, refer to the manufacturer's datasheet.
Manufacturer
The BSC059N04LS G is manufactured by infineon Technologies AG, a global semiconductor manufacturer headquartered in Neubiberg, Germany. Infineon specializes in providing a wide range of semiconductor solutions, including power semiconductors, automotive electronics, and security technologies. The company focuses on developing innovative products that enhance energy efficiency, mobility, and security in various applications, such as automotive, industrial, and consumer electronics. Infineon is known for its expertise in power management, offering products like MOSFETs, IGBTs, and integrated circuits that cater to the evolving needs of the semiconductor market.
Application
The BSC059N04LS G is an N-channel MOSFET primarily used in power management applications, including DC-DC converters, motor drives, and power supplies. Its high efficiency and low on-resistance make it suitable for applications in automotive systems, industrial control, and renewable energy systems. Additionally, it can be utilized in various consumer electronics for power switching and regulation.
Equivalent
The BSC059N04LS G is an N-channel MOSFET commonly used in power applications. Equivalent products include:
1. IRF320 (International Rectifier)
2. STP55NF06 (STMicroelectronics)
3. FDS6615 (Fairchild Semiconductor)
Ensure to check specifications such as voltage, current ratings, and RDS(on) for compatibility in your specific application.
1. IRF320 (International Rectifier)
2. STP55NF06 (STMicroelectronics)
3. FDS6615 (Fairchild Semiconductor)
Ensure to check specifications such as voltage, current ratings, and RDS(on) for compatibility in your specific application.
出荷
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出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
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