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BSC030P03NS3G

Name: BSC030P03NS3G
Rating: 4.7 (12 reviews)

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Mfr。パート #BSC030P03NS3G
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仕様

Manufacturer	Infineon Technologies
Package	TDSON-8-EP(5x6)
Operating Temperature	-55℃~+150℃
RDS(on)	3mΩ@6V,50A
Drain to Source Voltage	30V
Pd - Power Dissipation	125W
Current - Continuous Drain(Id)	100A
Reverse Transfer Capacitance (Crss@Vds)	520pF@15V
Input Capacitance(Ciss@Vds)	14nF@15V
Type	1 piece P-channel
Gate Threshold Voltage (Vgs(th)@Id)	1.9V
Gate Charge(Qg)	186nC@10V

概要

Description

BSC030P03NS3G appears to be a product code or model number, likely associated with a specific electronic component or device, such as a semiconductor or integrated circuit. Without more context, it’s challenging to provide detailed information about its specifications, applications, or features. Generally, such codes are used by manufacturers to identify and categorize their products, enabling easier reference for purchasing or technical support.
If you are looking for a specific type of information about BSC030P03NS3G, such as its datasheet, applications, or compatibility, please provide additional context or specify your query further.

Features

The BSC030P03NS3G is a N-channel MOSFET designed for efficient switching applications. Key features include:
1. Voltage Rating: It typically supports a drain-source voltage (V_DS) of up to 30V, making it suitable for various low-voltage applications.
2. Current Rating: It can handle up to 120A of continuous drain current, allowing for robust performance in demanding conditions.
3. On-Resistance (R_DS(on)): The MOSFET has a low on-resistance, often around 3 mΩ, which minimizes conduction losses.
4. Gate Threshold Voltage (V_GS(th)): The threshold voltage is usually in the range of 1.3V to 2.5V, enabling easy drive from standard logic levels.
5. Package Type: It comes in a TO-220 or DPAK package, providing good thermal performance and ease of mounting.
6. Fast Switching Speed: The device is optimized for fast switching, making it ideal for applications such as DC-DC converters and motor drivers.
These features make the BSC030P03NS3G suitable for power management, automotive, and other electronic applications.

Package

The BSC030P03NS3G is packaged in a TO-220 form factor, which is a standard package type for power devices, providing good thermal performance and ease of mounting on heatsinks.

Pinout

The BSC030P03NS3G is an N-channel MOSFET used for power applications. It features a total of 3 pins, which serve the following functions:
1. Gate (G): Controls the MOSFET's switching on and off.
2. Drain (D): The terminal through which the current flows out when the device is on.
3. Source (S): The terminal through which current flows into the MOSFET.
It is designed to handle high currents and voltages, making it suitable for various applications including DC-DC converters and power management systems.

Manufacturer

The BSC030P03NS3G is manufactured by Infineon Technologies AG, a global semiconductor manufacturer based in Germany. Infineon specializes in providing a range of products including microcontrollers, sensors, and power semiconductors. They serve various industries such as automotive, industrial electronics, and consumer electronics, focusing on energy efficiency and security solutions. Their products are widely used in applications like electric vehicles, renewable energy systems, and smart devices, making them a key player in the semiconductor sector.

Application

BSC030P03NS3G is a N-channel MOSFET commonly used in power management applications. Its main application areas include DC-DC converters, motor drives, power supply circuits, and battery management systems. This device is suitable for high-efficiency switching, enabling improved thermal performance and energy savings in consumer electronics, automotive applications, and industrial equipment.

Equivalent

The BSC030P03NS3G is an N-channel MOSFET. Equivalent products include the IRLZ34N, STP30NF3LLH5, FQP30N06L, and AOD230N. Ensure to compare specifications like RDS(on), VGS(th), and maximum current ratings for compatibility in your application.