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BSC027N04LS G
MOSFETs N-Ch 40V 100A TDSON-8 OptiMOS 3
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- Mfr。パート #BSC027N04LS G
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- データシート BSC027N04LS G DataSheet
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仕様
| Packaging | MouseReel |
| Standard Pack Qty | 5000 |
概要
Description
BSC027N04LS G is a specific model of a semiconductor device, typically a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor). It is designed for various applications in power management, including switching and amplification tasks in electronic circuits. This component features low on-resistance, high-speed switching capabilities, and efficient thermal performance, making it suitable for use in power supplies, motor drivers, and DC-DC converters.
Key parameters to consider include its voltage and current ratings, gate threshold voltage, and switching characteristics, which are essential for ensuring compatibility with specific circuit designs. The "G" designation often indicates a specific packaging or grade of the device, which may influence its thermal management and mounting options.
Overall, BSC027N04LS G plays a crucial role in modern electronic systems, contributing to improved efficiency and performance in various industrial and consumer applications.
Key parameters to consider include its voltage and current ratings, gate threshold voltage, and switching characteristics, which are essential for ensuring compatibility with specific circuit designs. The "G" designation often indicates a specific packaging or grade of the device, which may influence its thermal management and mounting options.
Overall, BSC027N04LS G plays a crucial role in modern electronic systems, contributing to improved efficiency and performance in various industrial and consumer applications.
Features
The BSC027N04LS G is a N-channel MOSFET designed for high-efficiency power applications. Key features include:
1. Voltage Rating: It typically has a drain-source voltage (V_DS) rating of 40V, making it suitable for various applications.
2. Current Rating: It can handle continuous drain currents up to 27A, allowing for high-power switching applications.
3. Low R_DS(on): The device exhibits a low on-resistance, generally around 4.5 mΩ, which reduces power loss and heat generation during operation.
4. Fast Switching Speed: It supports high-speed switching, improving efficiency in applications like DC-DC converters and motor control.
5. Thermal Performance: With a robust thermal package, it ensures effective heat dissipation, enhancing reliability and performance in demanding environments.
6. Gate Threshold Voltage: It has a low gate threshold voltage, enabling easy drive with standard logic level signals.
These features make the BSC027N04LS G suitable for various power management and conversion applications in consumer electronics and industrial settings.
1. Voltage Rating: It typically has a drain-source voltage (V_DS) rating of 40V, making it suitable for various applications.
2. Current Rating: It can handle continuous drain currents up to 27A, allowing for high-power switching applications.
3. Low R_DS(on): The device exhibits a low on-resistance, generally around 4.5 mΩ, which reduces power loss and heat generation during operation.
4. Fast Switching Speed: It supports high-speed switching, improving efficiency in applications like DC-DC converters and motor control.
5. Thermal Performance: With a robust thermal package, it ensures effective heat dissipation, enhancing reliability and performance in demanding environments.
6. Gate Threshold Voltage: It has a low gate threshold voltage, enabling easy drive with standard logic level signals.
These features make the BSC027N04LS G suitable for various power management and conversion applications in consumer electronics and industrial settings.
Package
The BSC027N04LS G is packaged in a TO-220 format. This package type is known for its robustness and is commonly used for power devices, providing efficient thermal management and ease of mounting on heatsinks.
Pinout
The BSC027N04LS G is a N-channel MOSFET with a pin count of 3. The pin configuration is as follows:
1. Gate (G): This pin controls the MOSFET's operation, allowing it to switch on and off in response to voltage applied to it.
2. Drain (D): This is the output pin where the current flows out of the MOSFET when it is turned on.
3. Source (S): This pin is the input where the current enters the MOSFET when it is in the on state.
In terms of functionality, the BSC027N04LS G is designed for power applications, providing low on-resistance and high efficiency. It can handle significant current and voltage levels, making it suitable for various applications such as power management and DC-DC converters. Overall, it is valued for its high performance in switching applications.
1. Gate (G): This pin controls the MOSFET's operation, allowing it to switch on and off in response to voltage applied to it.
2. Drain (D): This is the output pin where the current flows out of the MOSFET when it is turned on.
3. Source (S): This pin is the input where the current enters the MOSFET when it is in the on state.
In terms of functionality, the BSC027N04LS G is designed for power applications, providing low on-resistance and high efficiency. It can handle significant current and voltage levels, making it suitable for various applications such as power management and DC-DC converters. Overall, it is valued for its high performance in switching applications.
Manufacturer
The BSC027N04LS G is manufactured by Infineon Technologies AG, a global semiconductor manufacturer based in Germany. Infineon specializes in providing semiconductor solutions for various applications, including automotive, industrial, and consumer electronics. The company is known for its innovative power semiconductors, microcontrollers, and sensors, focusing on energy efficiency and performance. Infineon plays a significant role in the development of technologies that enable a more sustainable future, particularly in areas such as electric vehicles and renewable energy.
Application
The BSC027N04LS G is a N-channel MOSFET primarily used in power management applications. Its application areas include DC-DC converters, motor drives, power supplies, and battery management systems. It is suitable for switching applications due to its low on-resistance and fast switching capabilities, making it ideal for energy-efficient designs in consumer electronics, automotive systems, and industrial equipment.
Equivalent
The BSC027N04LS G is an N-channel MOSFET. Equivalent products include the IRF3205, STP75NF75, and FQP75N06. Always verify specifications like voltage, current, and Rds(on) before substituting.
出荷
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出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
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