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BSC019N04NSG
BSC019N04 - 12V-300V N-CHANNEL P
- メーカー
- Mfr。パート #BSC019N04NSG
- パッケージ
- データシート
- 在庫中7262
100% オリジナル &新しい
出荷の準備ができている24時間
365日の保証
RFQおよびもっと割引を得る
仕様
| Supplier | Rochester Electronics, LLC |
| Package | Bulk |
| ProductStatus | Active |
概要
Description
BSC019N04NSG is a course designed to introduce students to key concepts in biology, focusing on foundational principles and applications in the field. This course typically covers topics such as cell structure and function, genetics, evolution, and ecology. It aims to develop critical thinking skills and an understanding of the scientific method, enabling students to analyze biological data and engage with contemporary issues in biology.
Through lectures, laboratory work, and discussions, students will gain hands-on experience and learn to apply biological concepts to real-world scenarios. The course may also emphasize the importance of biodiversity and sustainability, encouraging students to consider the impact of human activity on the environment. Overall, BSC019N04NSG serves as an essential building block for further studies in biology and related disciplines.
Through lectures, laboratory work, and discussions, students will gain hands-on experience and learn to apply biological concepts to real-world scenarios. The course may also emphasize the importance of biodiversity and sustainability, encouraging students to consider the impact of human activity on the environment. Overall, BSC019N04NSG serves as an essential building block for further studies in biology and related disciplines.
Features
The BSC019N04NSG is a N-channel MOSFET designed for efficient power management in various applications. Key features include:
1. Voltage Rating: It can handle a maximum drain-source voltage (Vds) of 40V, making it suitable for many power applications.
2. Current Rating: The device supports continuous drain current (Id) of up to 19A, ensuring it can manage substantial loads.
3. Low Rds(on): It offers a low on-resistance (Rds(on)) of around 4.5 mΩ (typical), which minimizes power losses and improves thermal performance.
4. Fast Switching Speed: The MOSFET allows for rapid switching, making it ideal for applications in power converters and motor drivers.
5. Thermal Performance: Designed with efficient thermal management, it can dissipate heat effectively during operation.
6. Package Type: Typically available in a TO-220 or similar package, facilitating easy mounting and heat dissipation.
Overall, the BSC019N04NSG is a robust choice for high-efficiency power electronics applications.
1. Voltage Rating: It can handle a maximum drain-source voltage (Vds) of 40V, making it suitable for many power applications.
2. Current Rating: The device supports continuous drain current (Id) of up to 19A, ensuring it can manage substantial loads.
3. Low Rds(on): It offers a low on-resistance (Rds(on)) of around 4.5 mΩ (typical), which minimizes power losses and improves thermal performance.
4. Fast Switching Speed: The MOSFET allows for rapid switching, making it ideal for applications in power converters and motor drivers.
5. Thermal Performance: Designed with efficient thermal management, it can dissipate heat effectively during operation.
6. Package Type: Typically available in a TO-220 or similar package, facilitating easy mounting and heat dissipation.
Overall, the BSC019N04NSG is a robust choice for high-efficiency power electronics applications.
Package
The BSC019N04NSG is typically packaged in a TO-220 type package. This package is known for its good thermal performance and is commonly used for power MOSFETs.
Pinout
The BSC019N04NSG is a N-channel MOSFET designed for high performance in power applications. It features a TO-220 package, which typically has a pin count of 3.
The pin configuration and functions are as follows:
1. Gate (G): This pin controls the MOSFET's switching operation. Applying a voltage relative to the source allows current to flow from drain to source.
2. Drain (D): The main output pin where the load is connected. Current flows from the drain to the source when the MOSFET is turned on.
3. Source (S): This pin is connected to ground or the lower potential side of the circuit. Current flows out from the source to the drain when the device is active.
The BSC019N04NSG is known for its low on-resistance and high-speed performance, making it suitable for applications like power management, DC-DC converters, and motor control.
The pin configuration and functions are as follows:
1. Gate (G): This pin controls the MOSFET's switching operation. Applying a voltage relative to the source allows current to flow from drain to source.
2. Drain (D): The main output pin where the load is connected. Current flows from the drain to the source when the MOSFET is turned on.
3. Source (S): This pin is connected to ground or the lower potential side of the circuit. Current flows out from the source to the drain when the device is active.
The BSC019N04NSG is known for its low on-resistance and high-speed performance, making it suitable for applications like power management, DC-DC converters, and motor control.
Manufacturer
The BSC019N04NSG is manufactured by Infineon Technologies AG, a leading global semiconductor manufacturer headquartered in Neubiberg, Germany. Infineon specializes in developing semiconductor and system solutions for various applications, including automotive, industrial electronics, security, and the Internet of Things (IoT). The company focuses on innovation in areas such as power management, energy efficiency, and high-performance computing. Infineon is recognized for its commitment to sustainable technology and advancing digitalization across multiple sectors.
Application
BSC019N04NSG is a N-channel MOSFET primarily used in power management applications, including DC-DC converters, motor drivers, and power supplies. It is suitable for use in switching power supplies, battery management systems, and audio amplifiers. Its low on-resistance and fast switching capabilities make it ideal for efficient power handling in various electronic devices.
Equivalent
The BSC019N04NSG is an N-channel MOSFET. Equivalent products include the IRF3205, SI7160DP, and AON7410. Ensure to check specifications such as voltage ratings, current handling, and RDS(on) for compatibility in your specific application.
出荷
出荷方法私たち
DHL、FedEx、TNT、UPS、またはあなたの選択の他の運送業者を通じてグローバルな出荷サービスを提供します。
出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
支払い
Payment Methods
支払い期間は100%前払いです。
現在、下記の支払い方法のみを受け入れています。:
1. ペイパル
2. クレジット・デビットカード
3. ワイヤー 転送
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