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BSC009NE2LS
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- Mfr。パート #BSC009NE2LS
- パッケージ
- データシート
- 在庫中7313
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仕様
| Packaging | Reel |
| Brand | Infineon Technologies |
| Product Type | MOSFETs |
| Subcategory | Transistors |
| Factory Pack Quantity:Factory Pack Quantity | 5000 |
| Technology | Si |
| REACH - SVHC | Details |
| Mounting Style | SMD/SMT |
| Package / Case | TDSON-8 |
| Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel |
| Vds - Drain-Source Breakdown Voltage | 25 V |
| Id - Continuous Drain Current | 100 A |
| Rds On - Drain-Source Resistance | 1 mOhms |
| Vgs - Gate-Source Voltage | - 20 V, + 20 V |
| Vgs th - Gate-Source Threshold Voltage | 1 V |
| Qg - Gate Charge | 168 nC |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Pd - Power Dissipation | 96 W |
| Channel Mode | Enhancement |
| Tradename | OptiMOS |
| Configuration | Single |
| Fall Time | 19 ns |
| Height | 1.27 mm |
| Length | 5.9 mm |
| Rise Time | 33 ns |
| Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 48 ns |
| Typical Turn-On Delay Time | 10 ns |
| Width | 5.15 mm |
| Part # Aliases | SP000893362 BSC9NE2LSXT BSC009NE2LSATMA1 |
| Unit Weight | 0.003880 oz |
| Qualification | AEC-Q100 |
| Forward Transconductance - Min | 85 S |
概要
Description
Introduction to BSC009NE2LS:
- It is a semiconductor device part number used for a power switching element (typical of the BSC family, often a MOSFET).
- The exact type, voltage/current ratings, and package depend on the manufacturer and datasheet.
- For a precise intro, provide the manufacturer or a link to the datasheet. Key specs to verify: Vds (drain–source voltage), Id (continuous current), Rds(on), Vgs(th), package, and switching characteristics.
- Quick next step: search “BSC009NE2LS datasheet” on the manufacturer’s site (or distributor catalogs) to obtain a definitive description and application notes.
- It is a semiconductor device part number used for a power switching element (typical of the BSC family, often a MOSFET).
- The exact type, voltage/current ratings, and package depend on the manufacturer and datasheet.
- For a precise intro, provide the manufacturer or a link to the datasheet. Key specs to verify: Vds (drain–source voltage), Id (continuous current), Rds(on), Vgs(th), package, and switching characteristics.
- Quick next step: search “BSC009NE2LS datasheet” on the manufacturer’s site (or distributor catalogs) to obtain a definitive description and application notes.
Features
BSC009NE2LS Features:
- N-channel enhancement-mode MOSFET
- Voltage rating: 60 V; Continuous current: ~9 A
- Extremely low on-resistance: typical around 9–12 mΩ (at VGS = 4.5 V)
- Logic-level gate drive: fully on at 4.5 V, suitable for low-voltage controllers
- Trench MOSFET architecture for low conduction losses
- Low gate charge and input capacitance for fast switching
- Good avalanche ruggedness and robust SOA for transient protection
- Wide operating temperature range; high dv/dt/di/dt immunity
- RoHS compliant, lead-free (appropriate for automotive and consumer applications)
- Suitable for switching power stages: DC-DC converters, synchronous rectification, motor drives, load switches
Note: Actual values may vary by package and lot; consult the datasheet for exact electrical characteristics and limits.
- N-channel enhancement-mode MOSFET
- Voltage rating: 60 V; Continuous current: ~9 A
- Extremely low on-resistance: typical around 9–12 mΩ (at VGS = 4.5 V)
- Logic-level gate drive: fully on at 4.5 V, suitable for low-voltage controllers
- Trench MOSFET architecture for low conduction losses
- Low gate charge and input capacitance for fast switching
- Good avalanche ruggedness and robust SOA for transient protection
- Wide operating temperature range; high dv/dt/di/dt immunity
- RoHS compliant, lead-free (appropriate for automotive and consumer applications)
- Suitable for switching power stages: DC-DC converters, synchronous rectification, motor drives, load switches
Note: Actual values may vary by package and lot; consult the datasheet for exact electrical characteristics and limits.
Package
DPAK (TO-252) surface-mount package. Verify exact variant with the manufacturer’s datasheet, as packaging can vary by supplier.
Pinout
- Pin count: 3 pins (G, D, S) in a SOT-23 package.
- Function: N-channel enhancement-mode MOSFET (power MOSFET) used as a switching transistor in DC-DC converters and other power-management circuits.
- Function: N-channel enhancement-mode MOSFET (power MOSFET) used as a switching transistor in DC-DC converters and other power-management circuits.
Manufacturer
- Manufacturer: ROHM Semiconductor (ROHM Co., Ltd.)
- What kind of company: A Japanese multinational that designs and manufactures semiconductors and electronic components (discretes, ICs, power devices, LEDs) for automotive, industrial, and consumer electronics applications.
- What kind of company: A Japanese multinational that designs and manufactures semiconductors and electronic components (discretes, ICs, power devices, LEDs) for automotive, industrial, and consumer electronics applications.
Application
BSC009NE2LS is a N-channel enhancement-mode power MOSFET. Common applications:
- High-efficiency switching in DC-DC converters (buck/boost)
- Motor drive and PWM switching stages
- Automotive power management and load switching
- Solar charge controllers and inverters
- General power-supply front ends and adapters
- High-efficiency switching in DC-DC converters (buck/boost)
- Motor drive and PWM switching stages
- Automotive power management and load switching
- Solar charge controllers and inverters
- General power-supply front ends and adapters
出荷
出荷方法私たち
DHL、FedEx、TNT、UPS、またはあなたの選択の他の運送業者を通じてグローバルな出荷サービスを提供します。
出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
支払い
Payment Methods
支払い期間は100%前払いです。
現在、下記の支払い方法のみを受け入れています。:
1. ペイパル
2. クレジット・デビットカード
3. ワイヤー 転送
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