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BLF246B
- メーカー
- Mfr。パート #BLF246B
- パッケージ
- データシート BLF246B DataSheet
- 在庫中5505
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仕様
| Mounting Style | SMD/SMT |
| Package / Case | SOT-161A |
| Technology | Si |
| Brand | Ampleon |
| Product Type | RF MOSFET Transistors |
| Subcategory | MOSFETs |
| Vds - Drain-Source Breakdown Voltage | 65 V |
| Id - Continuous Drain Current | 8 A |
| Configuration | Dual |
| Type | RF Power MOSFET |
| Packaging | Tube |
| Maximum Operating Temperature | + 150 C |
| Minimum Operating Temperature | - 65 C |
| Factory Pack Quantity:Factory Pack Quantity | 20 |
| Transistor Polarity | N-Channel |
| Rds On - Drain-Source Resistance | 750 mOhms |
| Operating Frequency | 175 MHz |
| Gain | 19 dB |
| Output Power | 60 W |
| Channel Mode | Enhancement |
| Height | 7.27 mm |
| Length | 24.97 mm |
| Vgs - Gate-Source Voltage | + 20 V |
| Vgs th - Gate-Source Threshold Voltage | 4.5 V |
| Width | 16.81 mm |
| Part # Aliases | BLF246B,112 |
| Fall Time | 40 ns |
| Rise Time | 25 ns |
| Pd - Power Dissipation | 130 W |
概要
Description
The BLF246B is a high-power RF MOSFET designed for use in various applications, including RF amplification in VHF and UHF ranges, industrial, scientific, and medical (ISM) equipment, and linear amplifiers. It features a robust construction, capable of handling high voltage and current levels, making it suitable for demanding environments.
Key specifications include a maximum drain-source voltage (Vds) of 65V, a continuous drain current (Id) of up to 10A, and a high power gain with low distortion characteristics. The device typically operates in Class AB mode, offering a blend of efficiency and linearity.
The BLF246B is encapsulated in a metal can package, ensuring effective heat dissipation and reliability. Its versatility and performance make it a popular choice among engineers for designing RF applications requiring high output power and efficiency.
Key specifications include a maximum drain-source voltage (Vds) of 65V, a continuous drain current (Id) of up to 10A, and a high power gain with low distortion characteristics. The device typically operates in Class AB mode, offering a blend of efficiency and linearity.
The BLF246B is encapsulated in a metal can package, ensuring effective heat dissipation and reliability. Its versatility and performance make it a popular choice among engineers for designing RF applications requiring high output power and efficiency.
Features
The BLF246B is a high-power RF transistor designed for use in various applications, particularly in RF power amplifiers. Key features include:
1. Frequency Range: Optimized for high-frequency applications, typically operating within the 400 MHz to 1 GHz range.
2. Output Power: Capable of delivering high output power levels, making it suitable for transmitters and amplifiers.
3. High Efficiency: Designed for efficient operation, contributing to reduced heat generation and improved thermal management.
4. Robustness: Built to handle high voltages and currents, ensuring durability under demanding conditions.
5. Class AB Operation: Supports Class AB operation, which provides a good balance between linearity and efficiency.
6. Package Type: Available in various package types, often in metal can packages for enhanced thermal performance.
7. High Gain: Offers substantial gain, beneficial for amplification tasks in communication systems.
These features make the BLF246B a preferred choice in professional RF applications, including broadcasting and telecommunications.
1. Frequency Range: Optimized for high-frequency applications, typically operating within the 400 MHz to 1 GHz range.
2. Output Power: Capable of delivering high output power levels, making it suitable for transmitters and amplifiers.
3. High Efficiency: Designed for efficient operation, contributing to reduced heat generation and improved thermal management.
4. Robustness: Built to handle high voltages and currents, ensuring durability under demanding conditions.
5. Class AB Operation: Supports Class AB operation, which provides a good balance between linearity and efficiency.
6. Package Type: Available in various package types, often in metal can packages for enhanced thermal performance.
7. High Gain: Offers substantial gain, beneficial for amplification tasks in communication systems.
These features make the BLF246B a preferred choice in professional RF applications, including broadcasting and telecommunications.
Package
The BLF246B is typically available in a TO-220 package type. This package features a metal tab for heat dissipation and is designed for power transistors, making it suitable for RF amplification applications.
Pinout
The BLF246B is a high-power N-channel MOSFET used primarily in RF applications. It typically comes in a TO-220 package, which has a pin count of three.
Pin Configuration:
1. Gate (G) - This pin controls the MOSFET's operation, allowing it to turn on or off based on the voltage applied.
2. Drain (D) - The drain is where the output current flows out of the MOSFET when it is in the 'on' state.
3. Source (S) - The source pin is connected to the ground or negative voltage in the circuit.
Functions:
- The BLF246B is designed for high-frequency applications, with capabilities in RF amplification.
- It features low on-resistance, allowing for efficient power handling.
- It is commonly used in broadcast transmitters, industrial RF applications, and other high-power switching applications.
Always refer to the specific datasheet for detailed electrical characteristics and ratings.
Pin Configuration:
1. Gate (G) - This pin controls the MOSFET's operation, allowing it to turn on or off based on the voltage applied.
2. Drain (D) - The drain is where the output current flows out of the MOSFET when it is in the 'on' state.
3. Source (S) - The source pin is connected to the ground or negative voltage in the circuit.
Functions:
- The BLF246B is designed for high-frequency applications, with capabilities in RF amplification.
- It features low on-resistance, allowing for efficient power handling.
- It is commonly used in broadcast transmitters, industrial RF applications, and other high-power switching applications.
Always refer to the specific datasheet for detailed electrical characteristics and ratings.
Manufacturer
The BLF246B is manufactured by NXP Semiconductors, a global semiconductor company headquartered in Eindhoven, Netherlands. NXP specializes in the design and production of various semiconductor products, including integrated circuits and transistors, catering to a wide range of industries. Their offerings primarily serve automotive, industrial, IoT, and mobile markets, focusing on enhancing connectivity, security, and efficiency in electronic devices. NXP is known for its innovation in areas such as analog and digital processing, RF solutions, and power management, making it a key player in the semiconductor industry.
Application
The BLF246B is a high-power RF transistor primarily used in applications such as industrial RF heating, broadcasting, and communication systems. It is suitable for use in linear and class C amplifiers, particularly in VHF and UHF ranges. Its robustness and efficiency make it ideal for use in television transmitters, amateur radio, and other RF amplification tasks.
Equivalent
The BLF246B is a high-power RF transistor primarily used in amplifiers. Equivalent products include the MRF247, MRF300, and MRF522. Additionally, devices like the BLP10 and BLP25 may serve similar applications, although specifications can vary. Always check datasheets for specific parameters to ensure compatibility.
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出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
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