画像は参照用のみです。
BFU590QX
RF TRANS NPN 12V 8GHZ SOT89-3
- メーカー
- Mfr。パート #BFU590QX
- パッケージ SOT89-3
- データシート BFU590QX DataSheet
- 在庫中2358
100% オリジナル &新しい
出荷の準備ができている24時間
365日の保証
RFQおよびもっと割引を得る
仕様
| Package | Tape & Reel (TR),Cut Tape (CT) |
| ProductStatus | Active |
| TransistorType | NPN |
| Voltage-CollectorEmitterBreakdown(Max) | 12V |
| Frequency-Transition | 8GHz |
| Gain | 6.5dB |
| Power-Max | 2W |
| DCCurrentGain(hFE)(Min)@IcVce | 60 @ 80mA, 8V |
| Current-Collector(Ic)(Max) | 200mA |
| OperatingTemperature | -40°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | TO-243AA |
概要
Description
BFU590QX is a high-frequency NPN transistor commonly used in RF and microwave applications. It features low noise and high gain, making it suitable for amplification in various circuits. The transistor is often utilized in applications such as wireless communication, signal processing, and other high-frequency electronic devices.
Key specifications typically include a maximum collector current of around 100 mA and a voltage rating of up to 30 V. Its small package size allows for efficient integration into compact electronic designs. Due to its excellent performance in high-frequency ranges, the BFU590QX is favored in professional audio equipment, mobile devices, and consumer electronics.
Users must consider proper biasing and thermal management for optimal performance. Overall, the BFU590QX is a versatile component that plays a crucial role in enhancing signal quality and stability in electronic circuits.
Key specifications typically include a maximum collector current of around 100 mA and a voltage rating of up to 30 V. Its small package size allows for efficient integration into compact electronic designs. Due to its excellent performance in high-frequency ranges, the BFU590QX is favored in professional audio equipment, mobile devices, and consumer electronics.
Users must consider proper biasing and thermal management for optimal performance. Overall, the BFU590QX is a versatile component that plays a crucial role in enhancing signal quality and stability in electronic circuits.
Features
The BFU590QX is a high-performance NPN bipolar junction transistor (BJT) designed primarily for RF and low-noise amplifier applications. Key features include:
1. High Gain: The device typically provides a high current gain (hFE), enhancing amplification efficiency.
2. Low Noise: Designed for low noise figure, suitable for sensitive applications like RF front-ends.
3. Wide Frequency Range: Operates effectively over a wide frequency range, making it ideal for various communication systems.
4. Small Package Size: Available in a compact SOT-23 package, facilitating easy integration into space-constrained designs.
5. High Breakdown Voltage: Allows for reliable operation in demanding environments.
6. Thermal Stability: Offers good thermal stability, crucial for consistent performance in varying temperatures.
These features make the BFU590QX a popular choice in RF applications, including wireless communications and signal processing.
1. High Gain: The device typically provides a high current gain (hFE), enhancing amplification efficiency.
2. Low Noise: Designed for low noise figure, suitable for sensitive applications like RF front-ends.
3. Wide Frequency Range: Operates effectively over a wide frequency range, making it ideal for various communication systems.
4. Small Package Size: Available in a compact SOT-23 package, facilitating easy integration into space-constrained designs.
5. High Breakdown Voltage: Allows for reliable operation in demanding environments.
6. Thermal Stability: Offers good thermal stability, crucial for consistent performance in varying temperatures.
These features make the BFU590QX a popular choice in RF applications, including wireless communications and signal processing.
Package
The BFU590QX is packaged in a SOT-23 form factor. This surface-mount package is commonly used for discrete semiconductors due to its compact size and compatibility with automated assembly processes.
Pinout
The BFU590QX is a low-noise NPN bipolar junction transistor (BJT) typically used in RF applications. It comes in a 4-lead SOT-143 package. The pin configuration for the BFU590QX is as follows:
1. Pin 1: Emitter (E)
2. Pin 2: Base (B)
3. Pin 3: Collector (C)
4. Pin 4: Collector (C)
The BFU590QX is designed for applications such as low-noise amplifiers and RF amplification, providing high gain and low noise figure characteristics. It is suitable for operation in frequency ranges up to several GHz, making it ideal for use in communication systems.
1. Pin 1: Emitter (E)
2. Pin 2: Base (B)
3. Pin 3: Collector (C)
4. Pin 4: Collector (C)
The BFU590QX is designed for applications such as low-noise amplifiers and RF amplification, providing high gain and low noise figure characteristics. It is suitable for operation in frequency ranges up to several GHz, making it ideal for use in communication systems.
Manufacturer
The BFU590QX is manufactured by NXP Semiconductors. NXP is a global semiconductor company that specializes in the design and production of a wide range of electronic components, including microcontrollers, processors, and analog devices. The company is known for its focus on automotive, industrial, and Internet of Things (IoT) applications, providing innovative solutions that enable secure connectivity and intelligent systems. NXP was formed in 2006 as a spin-off from Philips and has since grown to become a major player in the semiconductor industry, emphasizing high-performance and energy-efficient products.
Application
The BFU590QX is a high-frequency transistor primarily used in RF applications. Its key application areas include RF amplification, signal processing, and as a driver in communication systems. It's suitable for use in UHF and microwave frequencies, making it ideal for satellite communications, wireless transceivers, and radar systems. Additionally, it can be utilized in low-noise amplifiers and as an oscillator in various electronic devices.
Equivalent
The BFU590QX chip is a N-channel MOSFET typically used in RF applications. Equivalent products include the BFG540, BFG591, and other similar high-frequency transistors from manufacturers like NXP, Infineon, or ON Semiconductor. Always check the specific datasheets for parameters like voltage, current, and frequency response to ensure compatibility.
出荷
出荷方法私たち
DHL、FedEx、TNT、UPS、またはあなたの選択の他の運送業者を通じてグローバルな出荷サービスを提供します。
出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
支払い
Payment Methods
支払い期間は100%前払いです。
現在、下記の支払い方法のみを受け入れています。:
1. ペイパル
2. クレジット・デビットカード
3. ワイヤー 転送
類似
-
MX25R8035FM1IL0
Macronix
-
MX66U1G45GXDI00
Macronix
-
MX25V4035FZUI
Macronix
-
MX25R3235FZNIL0
Macronix
-
MX25V16066M2I02
Macronix
-
MX25L2006EM1I-12G
Macronix
-
MX25R1635FZUIH0
Macronix
-
MX25V1635FM2I
Macronix
-
MX25L12833FM2I-10..
Macronix
-
MX25L12833FZ2I-10..
Macronix
-
MX25U25645GXDI00
Macronix
-
MX25L12835FZ2I-10..
Macronix