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BFU590GX
RF TRANS NPN 12V 8.5GHZ SOT223
- メーカー
- Mfr。パート #BFU590GX
- パッケージ TO-261-4,TO-261AA
- データシート BFU590GX DataSheet
- 在庫中7767
100% オリジナル &新しい
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仕様
| Package | Tape & Reel (TR),Cut Tape (CT) |
| ProductStatus | Active |
| TransistorType | NPN |
| Voltage-CollectorEmitterBreakdown(Max) | 12V |
| Frequency-Transition | 8.5GHz |
| Gain | 8dB |
| Power-Max | 2W |
| DCCurrentGain(hFE)(Min)@IcVce | 60 @ 80mA, 8V |
| Current-Collector(Ic)(Max) | 200mA |
| OperatingTemperature | -40°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | TO-261-4, TO-261AA |
概要
Description
BFU590GX is a high-performance NPN bipolar junction transistor (BJT) primarily used in RF (radio frequency) applications and high-speed switching. This device features low noise characteristics, making it suitable for applications such as amplifiers in communication systems, oscillators, and signal processing circuits. The BFU590GX is particularly valued for its ability to operate effectively at high frequencies, often up to several GHz, which makes it ideal for modern telecommunication technologies.
Key specifications typically include a high transition frequency (fT), low collector-emitter saturation voltage, and a compact package, allowing for efficient thermal management and integration into various electronic circuits. Its small size and robust performance make it a popular choice among engineers designing RF circuits and other electronic components requiring reliable and efficient signal amplification.
Key specifications typically include a high transition frequency (fT), low collector-emitter saturation voltage, and a compact package, allowing for efficient thermal management and integration into various electronic circuits. Its small size and robust performance make it a popular choice among engineers designing RF circuits and other electronic components requiring reliable and efficient signal amplification.
Features
The BFU590GX is a high-performance N-channel MOSFET designed for various applications, including power management and switching. Key features include:
- Voltage Rating: Up to 60V, suitable for medium-voltage applications.
- Current Rating: Capable of handling up to 16A, making it effective for high-current needs.
- Rds(on): Low on-resistance, typically around 45 mΩ, which minimizes power loss and enhances efficiency.
- Gate Threshold Voltage: Ranges from 1V to 3V, allowing for easy drive with logic-level signals.
- Package Type: Available in a compact TO-220 or similar package, facilitating easy integration into circuit designs.
- Thermal Performance: Good thermal characteristics ensure reliable operation under varying conditions.
These features make the BFU590GX suitable for applications in automotive, industrial, and consumer electronics sectors, where efficiency and reliability are crucial.
- Voltage Rating: Up to 60V, suitable for medium-voltage applications.
- Current Rating: Capable of handling up to 16A, making it effective for high-current needs.
- Rds(on): Low on-resistance, typically around 45 mΩ, which minimizes power loss and enhances efficiency.
- Gate Threshold Voltage: Ranges from 1V to 3V, allowing for easy drive with logic-level signals.
- Package Type: Available in a compact TO-220 or similar package, facilitating easy integration into circuit designs.
- Thermal Performance: Good thermal characteristics ensure reliable operation under varying conditions.
These features make the BFU590GX suitable for applications in automotive, industrial, and consumer electronics sectors, where efficiency and reliability are crucial.
Package
The BFU590GX is typically available in a small-outline transistor (SOT-23) package type, which is a compact surface-mount package commonly used for various electronic components.
Pinout
The BFU590GX is a NPN bipolar junction transistor (BJT) designed for RF applications, particularly in low-noise amplifier circuits. It is housed in a SOT-23 package, which typically has three pins.
Pin count and functions:
1. Pin 1 (Base): The control terminal where the input signal is applied. It modulates the current flowing from collector to emitter.
2. Pin 2 (Emitter): The terminal through which the output current flows out of the transistor. It is typically connected to ground in common-emitter configurations.
3. Pin 3 (Collector): The terminal where the output signal is taken. It collects the current from the emitter and provides the amplified output.
The BFU590GX is characterized by low noise figure and high gain, making it suitable for RF amplification, especially in communication devices.
Pin count and functions:
1. Pin 1 (Base): The control terminal where the input signal is applied. It modulates the current flowing from collector to emitter.
2. Pin 2 (Emitter): The terminal through which the output current flows out of the transistor. It is typically connected to ground in common-emitter configurations.
3. Pin 3 (Collector): The terminal where the output signal is taken. It collects the current from the emitter and provides the amplified output.
The BFU590GX is characterized by low noise figure and high gain, making it suitable for RF amplification, especially in communication devices.
Manufacturer
The BFU590GX is manufactured by Nexperia, a company specializing in semiconductor devices. Nexperia focuses on producing discrete, logic, and MOSFET components that serve various industries, including automotive, industrial, and consumer electronics. The company emphasizes high efficiency and reliability in its products, which are used in diverse applications ranging from power management to signal processing. Nexperia was formed as a spin-off from NXP Semiconductors in 2017 and has since established itself as a key player in the semiconductor market, known for its commitment to quality and innovation.
Application
The BFU590GX is a high-frequency, low-noise NPN transistor primarily used in RF applications, including wireless communication, amplifiers, and signal processing. It's suitable for low-power RF circuits, such as in mobile devices, satellite communications, and broadcast systems. Additionally, it can be applied in high-speed switching and automotive electronics.
Equivalent
The BFU590GX chip is a high-frequency NPN transistor primarily used in RF applications. Equivalent products include the 2N5109, MMBT3904, and BFT92. While these alternatives may match certain specifications, it's essential to verify electrical characteristics like gain, frequency response, and package type to ensure compatibility for specific applications. Always consult datasheets for detailed comparisons.
出荷
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出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
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