画像は参照用のみです。

BFR193E6327HTSA1

Name: BFR193E6327HTSA1
Rating: 4.7 (12 reviews)

RF TRANS NPN 12V 8GHZ SOT-23

メーカー
Mfr。パート #BFR193E6327HTSA1
パッケージ
データシート
在庫中9058

+BOM RFQについて

100% オリジナル &新しい

出荷の準備ができている24時間

365日の保証

RFQおよびもっと割引を得る

仕様

Part Status	Active
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	12V
Frequency - Transition	8GHz
Noise Figure (dB Typ @ f)	1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
Gain	10dB ~ 15dB
Power - Max	580mW
DC Current Gain (hFE) (Min) @ Ic, Vce	70 @ 30mA, 8V
Current - Collector (Ic) (Max)	80mA
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Supplier Device Package	PG-SOT23
Base Product Number	BFR193

概要

Description

The BFR193E6327HTSA1 is a high-frequency NPN transistor designed for RF applications, particularly in communication devices. It features a low noise figure, making it suitable for amplifying weak signals in various circuits. With a maximum collector current of 50 mA and a voltage rating of 30V, it operates efficiently in low-power environments.
The transistor is housed in a compact SOT-23 package, facilitating space-saving designs in modern electronics. Its high transition frequency (fT) enables it to function effectively in applications such as RF amplifiers, oscillators, and mixers, making it versatile in both consumer and industrial markets.
Key specifications include a low collector-emitter saturation voltage, good thermal stability, and a wide operating temperature range, making the BFR193E6327HTSA1 reliable under various conditions. Overall, it is a preferred choice for engineers seeking high-performance transistors in RF and audio applications.

Features

The BFR193E6327HTSA1 is a high-frequency NPN transistor designed for RF and general-purpose applications. Key features include:
1. Type: NPN bipolar junction transistor (BJT).
2. Frequency Range: Suitable for high-frequency applications, typically up to several GHz.
3. Voltage: Maximum collector-emitter voltage (Vce) of 45V, making it suitable for moderate voltage applications.
4. Current: Maximum collector current (Ic) of 150mA, allowing for various amplification tasks.
5. Gain: High current gain (hFE) in the range of 40 to 300, providing effective signal amplification.
6. Package: Comes in a compact SOT-23 package for efficient space utilization on PCBs.
7. Applications: Ideal for RF amplifiers, oscillators, and switching applications in consumer electronics and communication devices.
These characteristics make the BFR193E6327HTSA1 a versatile choice for both amateur and professional electronics projects.

Package

The BFR193E6327HTSA1 is packaged in a SOT-23 surface mount package.

Pinout

The BFR193E6327HTSA1 is an NPN RF transistor with a total of 3 pins. The pin configuration and their functions are as follows:
1. Collector (C): This is the output terminal where the amplified signal is taken.
2. Base (B): This terminal is used for input signal control; it modulates the current flow between the collector and emitter, thus controlling the transistor's amplification.
3. Emitter (E): This is the terminal through which current flows out of the transistor, completing the circuit.
The transistor is widely used in RF applications due to its high-frequency performance and low noise characteristics.

Manufacturer

The BFR193E6327HTSA1 is manufactured by Nexperia, a global semiconductor company. Nexperia specializes in discrete, logic, and MOSFET components, focusing on high volume and high reliability products. The company is known for its expertise in manufacturing components used in various electronic applications, including automotive, industrial, and consumer electronics. Nexperia was formed as a spin-off from NXP Semiconductors and has its headquarters in Nijmegen, Netherlands. It emphasizes efficiency and quality in its product offerings, serving a wide range of markets with a commitment to innovation and sustainability.

Application

The BFR193E6327HTSA1 is a high-frequency NPN transistor primarily used in RF applications, including amplifiers, oscillators, and signal processing. Its low noise and high gain make it suitable for RF communication, including mobile phones and other wireless devices. Additionally, it can be used in various analog circuits and switching applications.

Equivalent

The BFR193E6327HTSA1 is a high-frequency NPN transistor. Equivalent products include the BFR193, BFR196, and BFR207, among others. For specific applications, consider alternative transistors like the MMBF4393 or MMBFJ100, depending on the required specifications such as frequency response and power handling. Always check datasheets for detailed comparisons to ensure compatibility.