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BAS85-GS08

Name: BAS85-GS08
Rating: 4.7 (12 reviews)

DIODE SCHOTTKY 30V 200MA SOD80

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Mfr。パート #BAS85-GS08
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データシート BAS85-GS08 DataSheet
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仕様

Part Status	Active
Technology	Schottky
Voltage - DC Reverse (Vr) (Max)	30 V
Current - Average Rectified (Io)	200mA
Voltage - Forward (Vf) (Max) @ If	800 mV @ 100 mA
Speed	Small Signal =< 200mA (Io), Any Speed
Current - Reverse Leakage @ Vr	2 µA @ 25 V
Capacitance @ Vr, F	10pF @ 1V, 1MHz
Mounting Type	Surface Mount
Package / Case	DO-213AC, MINI-MELF, SOD-80
Supplier Device Package	SOD-80 MiniMELF
Operating Temperature - Junction	125°C (Max)
Base Product Number	BAS85
Reverse Recovery Time (trr)	5 ns

概要

Description

BAS85-GS08 is a high-speed switching diode commonly used in electronic circuits for various applications, including signal processing and voltage clamping. It features a low forward voltage drop, fast switching times, and high reverse voltage capabilities, making it suitable for both general-purpose and high-frequency applications. The diode is often used in rectification, switching, and protection circuits, due to its ability to handle rapid changes in voltage and current.
The "GS08" designation typically refers to the specific packaging or manufacturer guidelines, which can affect the diode’s thermal performance and mounting options. Its compact size and efficiency make it ideal for integration into small electronic devices, ranging from consumer electronics to industrial equipment.
Overall, BAS85-GS08 serves as a reliable component in modern electronic design, contributing to improved circuit efficiency and reliability.

Features

The BAS85-GS08 is a dual Schottky barrier diode, primarily used in high-speed switching applications. Key features include:
1. Low Forward Voltage Drop: Offers low forward voltage, typically around 0.3V, enhancing efficiency.
2. Fast Switching Speed: Suitable for high-frequency applications, minimizing delay in signal processing.
3. High Surge Rating: Can handle brief overcurrent conditions, improving reliability in transient situations.
4. Low Reverse Leakage Current: Ensures minimal power loss during reverse bias, benefiting battery-operated devices.
5. Compact Package: Available in a surface-mount SOT-23 package, facilitating space-saving designs on PCBs.
6. Versatile Applications: Ideal for power management, RF applications, and signal demodulation.
These attributes make the BAS85-GS08 an excellent choice for engineers looking for efficient, reliable diodes in modern electronic designs.

Package

The BAS85-GS08 is packaged in a SOT-23 (Small Outline Transistor) format, which is a compact, surface-mount package. This type is popular for its small size and efficiency in space-constrained applications.

Pinout

The BAS85-GS08 is a dual Schottky diode with a total of 2 pins. It is designed for high-speed switching applications and features low forward voltage drop and fast recovery time.
Pin Functions:
1. Anode (A1) - Positive terminal of the first diode.
2. Cathode (K1) - Negative terminal of the first diode.
3. Anode (A2) - Positive terminal of the second diode.
4. Cathode (K2) - Negative terminal of the second diode.
The BAS85 is typically used in applications such as clamping, rectification, and RF signal detection. It is packaged in a small SOT-23 or similar format, making it suitable for space-constrained designs.

Manufacturer

The BAS85-GS08 is manufactured by Nexperia, a global semiconductor company. Nexperia specializes in the production of discrete, logic, and MOSFET components, serving various industries including automotive, industrial, and consumer electronics. The company focuses on high-quality, reliable semiconductor solutions, leveraging advanced technology to provide efficient and compact components. Nexperia was spun off from NXP Semiconductors in 2017, allowing it to concentrate on its core business of discrete devices and small signal transistors, such as the BAS85-GS08, which is commonly used in switching and signal processing applications.

Application

The BAS85-GS08 is a general-purpose Schottky diode commonly used in applications such as signal demodulation, clamping, and voltage regulation. It is ideal for high-speed switching applications, RF circuits, and low-voltage power supplies. Additionally, it can be utilized in rectification for power conversion and as protection devices in electronic circuits to prevent reverse polarity and voltage spikes.

Equivalent

The BAS85-GS08 is a Schottky barrier diode. Equivalent products include the BAT54, BAT60, and 1N5817. These alternatives may vary in specifications, such as voltage and current ratings, so ensure to check the datasheets for compatibility in your specific application.