画像は参照用のみです。
BAR9002ELE6327XTMA1
RF DIODE PIN 80V 250MW TSLP-2-19
- メーカー
- Mfr。パート #BAR9002ELE6327XTMA1
- パッケージ 0402 (1006 Metric)
- データシート BAR9002ELE6327XTMA1 DataSheet
- 在庫中4475
100% オリジナル &新しい
出荷の準備ができている24時間
365日の保証
RFQおよびもっと割引を得る
仕様
| Supplier | Infineon Technologies |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| ProductStatus | Active |
| DiodeType | PIN - Single |
| Voltage-PeakReverse(Max) | 80V |
| Current-Max | 100 mA |
| Capacitance@VrF | 0.35pF @ 1V, 1MHz |
| Resistance@IfF | 800mOhm @ 10mA, 100MHz |
| PowerDissipation(Max) | 250 mW |
| OperatingTemperature | 150°C (TJ) |
| Package/Case | 0402 (1006 Metric) |
概要
Description
The BAR9002ELE6327XTMA1 is a specific component or part number that likely pertains to an electronic device or assembly. Typically, such identifiers are used to specify products in technical fields like electronics, where precise specifications are crucial for compatibility and performance.
To provide a more detailed introduction, it's essential to refer to the manufacturer’s documentation or datasheets associated with BAR9002ELE6327XTMA1. This will include information about its specifications, applications, and functionalities. Commonly, components like this could be used in various applications ranging from consumer electronics to industrial machinery.
If you have a specific context or industry in mind, I can provide more tailored information or insights related to that.
To provide a more detailed introduction, it's essential to refer to the manufacturer’s documentation or datasheets associated with BAR9002ELE6327XTMA1. This will include information about its specifications, applications, and functionalities. Commonly, components like this could be used in various applications ranging from consumer electronics to industrial machinery.
If you have a specific context or industry in mind, I can provide more tailored information or insights related to that.
Features
The BAR9002ELE6327XTMA1 is a precision amplifier designed for various applications, featuring low offset voltage and high gain. Key features include:
1. Power Supply: Operates from a wide voltage range, typically between 2.7V to 36V.
2. Input Bias Current: Low input bias currents suitable for high-impedance sensor interfaces.
3. Gain Bandwidth Product: High gain bandwidth, ensuring stable and quick signal amplification.
4. Common-Mode Rejection Ratio (CMRR): High CMRR for accurate differential signal amplification.
5. Temperature Range: Designed to operate across a wide temperature spectrum, making it suitable for industrial applications.
6. Package Type: Available in compact surface-mount packages, facilitating easy integration into circuit boards.
7. Low Noise Performance: Ensures minimal signal distortion and improved overall signal clarity.
This amplifier is ideal for precision measurement, instrumentation, and sensor applications, where accuracy and reliability are crucial.
1. Power Supply: Operates from a wide voltage range, typically between 2.7V to 36V.
2. Input Bias Current: Low input bias currents suitable for high-impedance sensor interfaces.
3. Gain Bandwidth Product: High gain bandwidth, ensuring stable and quick signal amplification.
4. Common-Mode Rejection Ratio (CMRR): High CMRR for accurate differential signal amplification.
5. Temperature Range: Designed to operate across a wide temperature spectrum, making it suitable for industrial applications.
6. Package Type: Available in compact surface-mount packages, facilitating easy integration into circuit boards.
7. Low Noise Performance: Ensures minimal signal distortion and improved overall signal clarity.
This amplifier is ideal for precision measurement, instrumentation, and sensor applications, where accuracy and reliability are crucial.
Package
The BAR9002ELE6327XTMA1 is packaged in a small-outline transistor (SOT-23) package type.
Pinout
The BAR9002ELE6327XTMA1 is a dual N-channel MOSFET designed for automotive and industrial applications. It features a pin count of 8. The key functions of the pins are as follows:
1. Gate 1 (G1) - Controls the first N-channel MOSFET.
2. Source 1 (S1) - Source terminal of the first MOSFET.
3. Drain 1 (D1) - Drain terminal of the first MOSFET.
4. Gate 2 (G2) - Controls the second N-channel MOSFET.
5. Source 2 (S2) - Source terminal of the second MOSFET.
6. Drain 2 (D2) - Drain terminal of the second MOSFET.
7. Common Ground (GND) - Common ground for both MOSFETs.
8. Thermal Pad (Thermal) - Provides heat dissipation.
The device is packaged in a compact DPAK format, facilitating efficient thermal management and compact PCB design.
1. Gate 1 (G1) - Controls the first N-channel MOSFET.
2. Source 1 (S1) - Source terminal of the first MOSFET.
3. Drain 1 (D1) - Drain terminal of the first MOSFET.
4. Gate 2 (G2) - Controls the second N-channel MOSFET.
5. Source 2 (S2) - Source terminal of the second MOSFET.
6. Drain 2 (D2) - Drain terminal of the second MOSFET.
7. Common Ground (GND) - Common ground for both MOSFETs.
8. Thermal Pad (Thermal) - Provides heat dissipation.
The device is packaged in a compact DPAK format, facilitating efficient thermal management and compact PCB design.
Manufacturer
The BAR9002ELE6327XTMA1 is manufactured by Bosch Sensortec, a subsidiary of the Bosch Group. Bosch Sensortec specializes in the development of micro-electromechanical systems (MEMS) and sensor technologies for a variety of applications, including consumer electronics, automotive, and industrial sectors. The company focuses on creating innovative solutions that enhance the functionality and efficiency of electronic devices, such as smartphones, wearables, and IoT devices. Bosch Sensortec is known for its commitment to quality and advanced technology in the sensor market.
Application
The BAR9002ELE6327XTMA1 is a high-frequency, low-noise amplifier (LNA) primarily used in applications such as telecommunications, wireless communications, and RF systems. It is suitable for 5G infrastructure, IoT devices, and satellite communications, enhancing signal reception and transmission capabilities. Additionally, it can be utilized in automotive radar and industrial automation systems to improve data transmission efficiency and reliability.
Equivalent
The BAR9002ELE6327XTMA1 chip is a low-noise, RF power amplifier typically used in wireless communication applications. Equivalent products may include the following:
1. BFG540 - Low-noise transistor
2. MGA-31589 - RF amplifier from Avago Technologies
3. ATF-54143 - RF amplifier for low-noise applications
Always verify compatibility for your specific application before substituting components.
1. BFG540 - Low-noise transistor
2. MGA-31589 - RF amplifier from Avago Technologies
3. ATF-54143 - RF amplifier for low-noise applications
Always verify compatibility for your specific application before substituting components.
出荷
出荷方法私たち
DHL、FedEx、TNT、UPS、またはあなたの選択の他の運送業者を通じてグローバルな出荷サービスを提供します。
出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
支払い
Payment Methods
支払い期間は100%前払いです。
現在、下記の支払い方法のみを受け入れています。:
1. ペイパル
2. クレジット・デビットカード
3. ワイヤー 転送
類似
-
MX25L3233FZBI-08Q
Macronix
-
MX25L3233FM1I-08Q
Macronix
-
MX29F400CBTI-70G
Macronix
-
MX25V5126FM1I
Macronix
-
MX25V4035FZUI
Macronix
-
MX25V16066M1I02
Macronix
-
MX25R3235FZNIL0
Macronix
-
MX25V16066M2I02
Macronix
-
MX25L25673GMI-10G
Macronix
-
MX25U51279GXDR00
Macronix
-
MX25R1635FZUIH0
Macronix
-
MX25L6433FM2I-08G
Macronix