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AUIRF7341QTR
MOSFET 2N-CH 55V 5.1A 8SOIC
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- Mfr。パート #AUIRF7341QTR
- パッケージ
- データシート AUIRF7341QTR DataSheet
- 在庫中7200
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仕様
| Series | HEXFET® |
| Part Status | Obsolete |
| Base Product Number | AUIRF7341 |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain (Id) @ 25°C | 5.1A |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 5.1A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 44nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 780pF @ 25V |
| Power - Max | 2.4W |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount |
| Package | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SOIC |
| Packaging | Tape & Reel (TR) |
概要
Description
The AUIRF7341QTR is a N-channel MOSFET designed for high-efficiency applications, including power management and switching. It features a low on-resistance (RDS(on)), ensuring minimal power loss during operation, making it suitable for various applications such as DC-DC converters, motor control, and automotive systems.
Key specifications include a maximum drain-source voltage (VDS) of 40V and a continuous drain current (ID) of up to 90A at 25°C. The device offers fast switching capabilities, which contribute to improved performance in high-frequency applications. The AUIRF7341QTR comes in a TO-220 package, facilitating efficient heat dissipation.
Its robust construction and performance characteristics make it a preferred choice for designers looking to enhance energy efficiency and reliability in their electronic designs. Overall, the AUIRF7341QTR is a versatile component suitable for a wide range of power applications.
Key specifications include a maximum drain-source voltage (VDS) of 40V and a continuous drain current (ID) of up to 90A at 25°C. The device offers fast switching capabilities, which contribute to improved performance in high-frequency applications. The AUIRF7341QTR comes in a TO-220 package, facilitating efficient heat dissipation.
Its robust construction and performance characteristics make it a preferred choice for designers looking to enhance energy efficiency and reliability in their electronic designs. Overall, the AUIRF7341QTR is a versatile component suitable for a wide range of power applications.
Features
The AUIRF7341QTR is an N-channel MOSFET designed for high-efficiency applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 30V, making it suitable for low-voltage applications.
2. Current Rating: It can handle a continuous drain current (I_D) of up to 60A, allowing for robust performance in demanding environments.
3. On-Resistance: It features a low on-resistance (R_DS(on)) of around 8 mΩ at V_GS = 10V, which minimizes power loss and improves thermal performance.
4. Fast Switching: The device supports high-speed switching capabilities, beneficial for applications like DC-DC converters and motor drivers.
5. Thermal Characteristics: It comes in a TO-220 package with excellent thermal dissipation properties.
6. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is between 1-2V, enabling it to be driven by standard logic levels.
7. Applications: Ideal for power management, inverter circuits, and various automation tasks.
Overall, the AUIRF7341QTR is a versatile MOSFET suited for various high-performance applications.
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 30V, making it suitable for low-voltage applications.
2. Current Rating: It can handle a continuous drain current (I_D) of up to 60A, allowing for robust performance in demanding environments.
3. On-Resistance: It features a low on-resistance (R_DS(on)) of around 8 mΩ at V_GS = 10V, which minimizes power loss and improves thermal performance.
4. Fast Switching: The device supports high-speed switching capabilities, beneficial for applications like DC-DC converters and motor drivers.
5. Thermal Characteristics: It comes in a TO-220 package with excellent thermal dissipation properties.
6. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is between 1-2V, enabling it to be driven by standard logic levels.
7. Applications: Ideal for power management, inverter circuits, and various automation tasks.
Overall, the AUIRF7341QTR is a versatile MOSFET suited for various high-performance applications.
Package
The AUIRF7341QTR is packaged in a TO-220 form factor. This package type is designed for high-power applications and provides efficient heat dissipation.
Pinout
The AUIRF7341QTR is a high-performance N-channel MOSFET designed for various switching applications. It comes in a package with 8 pins.
Pin Configuration:
1. Gate (G) - Controls the MOSFET switching.
2. Drain (D) - The output terminal for current flow.
3. Source (S) - The input terminal connected to ground or negative supply.
4. Additional pins - Configuration may include options for thermal management or additional gate control.
Function:
The AUIRF7341QTR enables efficient power management by allowing high-speed switching and managing high voltages. It is particularly suited for applications in power supplies, motor drives, and other industrial electronics where efficient power conversion is essential. Its low R_DS(on) value helps minimize conduction losses, enhancing overall system efficiency.
For specific applications or configurations, refer to the datasheet for detailed electrical characteristics and operational parameters.
Pin Configuration:
1. Gate (G) - Controls the MOSFET switching.
2. Drain (D) - The output terminal for current flow.
3. Source (S) - The input terminal connected to ground or negative supply.
4. Additional pins - Configuration may include options for thermal management or additional gate control.
Function:
The AUIRF7341QTR enables efficient power management by allowing high-speed switching and managing high voltages. It is particularly suited for applications in power supplies, motor drives, and other industrial electronics where efficient power conversion is essential. Its low R_DS(on) value helps minimize conduction losses, enhancing overall system efficiency.
For specific applications or configurations, refer to the datasheet for detailed electrical characteristics and operational parameters.
Manufacturer
The AUIRF7341QTR is manufactured by Infineon Technologies, a global semiconductor company based in Germany. Infineon specializes in designing and manufacturing a wide range of semiconductor products, including power semiconductors, microcontrollers, sensors, and security solutions. The company serves various industries, including automotive, industrial, and consumer electronics, focusing on energy efficiency, mobility, and security applications. Infineon is known for its innovative technologies and commitment to sustainability, making it a key player in the semiconductor market.
Application
The AUIRF7341QTR is a high-performance N-channel MOSFET commonly used in applications such as power management, motor control, and automotive systems. It is suitable for DC-DC converters, high-speed switching, and battery management systems due to its low on-resistance and fast switching capabilities. Additionally, it can be utilized in industrial applications and various electronic devices requiring efficient power handling.
Equivalent
The AUIRF7341QTR is a N-channel MOSFET. Equivalent products include:
1. IRF7341
2. STP34NF10
3. FQP30N06L
4. BSS138
5. IPP50R190CP
Always verify specifications such as voltage, current, and Rds(on) before substituting.
1. IRF7341
2. STP34NF10
3. FQP30N06L
4. BSS138
5. IPP50R190CP
Always verify specifications such as voltage, current, and Rds(on) before substituting.
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出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
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