AS6C2016-55ZIN

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AS6C2016-55ZIN

IC SRAM 2MBIT PARALLEL 44TSOP II

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  • Mfr。パート #AS6C2016-55ZIN
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仕様

Part Status Active
DigiKey Programmable Not Verified
Memory Type Volatile
Memory Format SRAM
Technology SRAM - Asynchronous
Memory Size 2Mbit
Memory Organization 128K x 16
Memory Interface Parallel
Write Cycle Time - Word, Page 55ns
Access Time 55 ns
Voltage - Supply 2.7V ~ 5.5V
Operating Temperature -40°C ~ 85°C (TA)
Mounting Type Surface Mount
Package / Case 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package 44-TSOP II
Base Product Number AS6C2016

概要

Description

AS6C2016-55ZIN is a low-power, high-performance CMOS Static Random Access Memory (SRAM) device with a 2Mbit capacity. It is designed for use in various applications such as consumer electronics, telecommunications, and portable devices requiring fast data access and retention. Operating typically at a voltage of 3.3V, the AS6C2016-55ZIN offers a maximum access time of 55 ns, making it suitable for high-speed data processing.
The chip features a simple, asynchronous interface, allowing easy integration into systems. With a low standby current consumption, this SRAM is ideal for battery-operated devices. It supports a range of operating temperatures, ensuring reliability in diverse environments. Overall, the AS6C2016-55ZIN provides an efficient memory solution for applications demanding both speed and low power consumption.

Features

The AS6C2016-55ZIN is a 2M x 8-bit (16Mbit) CMOS Static Random Access Memory (SRAM) chip. Key features include:
1. Access Time: Offers a fast access time of 55 ns, making it suitable for high-speed applications.
2. Supply Voltage: Operates on a voltage range of 2.7V to 3.6V, allowing for low power consumption.
3. Low Power Consumption: Designed for low operating and standby currents, ideal for battery-operated devices.
4. Data Retention: Maintains data integrity even during power-down conditions.
5. Asynchronous Operation: Provides simple and straightforward interface without the need for clock signals.
6. Pin Configuration: Available in a standard 32-pin SOP package, facilitating easy integration into various designs.
7. Temperature Range: Typically rated for commercial temperature ranges, ensuring reliability in diverse environments.
These features make the AS6C2016-55ZIN suitable for applications in consumer electronics, telecommunications, and industrial control systems.

Package

The AS6C2016-55ZIN is packaged in a 28-pin TSOP II (Thin Small Outline Package) format. This package type is designed for high-density memory applications, providing a compact footprint suitable for various electronic devices.

Pinout

The AS6C2016-55ZIN is a 16Mb (2M x 8-bit) CMOS static random-access memory (SRAM) device. It features a pin count of 28 pins.
Key functions of its pins include:
1. Address Inputs (A0-A20): 21 pins used to select the memory address for read/write operations.
2. Data Inputs/Outputs (D0-D7): 8 pins for data transfer, allowing simultaneous read and write operations.
3. Chip Enable (CE): Activates the chip for operation.
4. Output Enable (OE): Controls the output of data; active low.
5. Write Enable (WE): Initiates write operations; active low.
6. Vcc: Power supply pin.
7. GND: Ground pin.
This SRAM device is commonly utilized in various applications requiring fast and reliable memory access.

Manufacturer

The AS6C2016-55ZIN is manufactured by Alliance Semiconductor Corporation. Alliance Semiconductor is a company that specializes in designing and developing high-performance semiconductor solutions, particularly in memory products, including SRAM and DRAM. Founded in 1995 and headquartered in San Jose, California, the company primarily serves the consumer electronics, telecommunications, and industrial markets. Alliance Semiconductor focuses on providing innovative, cost-effective solutions for various applications, leveraging advanced technology to enhance performance and efficiency in their products.

Application

The AS6C2016-55ZIN is a 2M x 8-bit CMOS static RAM, commonly used in applications such as portable devices, consumer electronics, networking equipment, and embedded systems. Its low power consumption and high-speed performance make it suitable for cache memory, data buffering, and temporary storage in various electronic devices, including printers, routers, and industrial automation systems.

Equivalent

The AS6C2016-55ZIN is a 2Mb (256K x 8) SRAM chip. Equivalent products include:
1. Cypress CY7C199DN
2. Microchip/Microsemi SSTU32849
3. Alliance Memory AS6C2016-55ZIN
4. ISSI IS62WV25616BLL-55B
5. Winbond W2419S
Always verify specifications and compatibility for your specific application before substitution.

出荷

出荷方法私たち

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出荷料参照（DHL/FedEx）:

DHL の: 配送費は25ドル〜45ドル（0.5kg）の範囲で、推定配送時間は2〜5営業日です。

フェデックス: 配送費は25ドル〜40ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

UPS の: 配送費は25ドル〜45ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

TNT社: 配送費は25ドル〜65ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

EMS: 配送料金は30〜50ドル（0.5kg）の範囲で、推定配送時間は7〜15営業日です。

登録航空郵便: 配送費は2〜4ドル（0.1kg）で、推定配送時間は5〜20営業日です。

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