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AS4C512M16D3LB-12BCN
IC DRAM 8GBIT PARALLEL 96FBGA
- メーカー
- Mfr。パート #AS4C512M16D3LB-12BCN
- パッケージ 96-TFBGA
- データシート
- 在庫中180
100% オリジナル &新しい
出荷の準備ができている24時間
365日の保証
RFQおよびもっと割引を得る
仕様
| Supplier | Alliance Memory, Inc. |
| Package | Tray |
| ProductStatus | Active |
| MemoryType | Volatile |
| MemoryFormat | DRAM |
| Technology | SDRAM - DDR3L |
| MemorySize | 8Gb (512M x 16) |
| MemoryInterface | Parallel |
| ClockFrequency | 800 MHz |
| WriteCycleTime-WordPage | 15ns |
| AccessTime | 20 ns |
| Voltage-Supply | 1.283V ~ 1.45V |
| OperatingTemperature | 0°C ~ 95°C (TC) |
| MountingType | Surface Mount |
| Package/Case | 96-TFBGA |
概要
Description
AS4C512M16D3LB-12BCN is a DDR3L SDRAM device from Alliance Memory. Key points:
- Type and density: DDR3L SDRAM, 512M x 16 organization, total capacity ≈ 8 Gbit (about 1 GB per device) with a 16-bit data width.
- Voltage: DDR3L (low voltage), typically around 1.35 V core operation (1.5 V I/O variants possible in some configs).
- Speed: Supports standard DDR3 speeds (commonly DDR3-1066/1333 in this family; check datasheet for exact grades).
- Architecture: Synchronous, 8 banks, burst length 8, with automatic refresh.
- Package/marking: The -12BCN suffix encodes speed grade, temperature range, packaging, and lead-free (BCN) options.
- Use cases: Building blocks for higher-density memory modules and embedded systems; multiple devices can be combined to form larger DIMMs or buffers depending on the design.
- Note: For precise timing (CL, tRCD, tRP), voltage tolerances, temperature range, and package details, consult the official Alliance Memory datasheet and the supplier’s specifications.
- Type and density: DDR3L SDRAM, 512M x 16 organization, total capacity ≈ 8 Gbit (about 1 GB per device) with a 16-bit data width.
- Voltage: DDR3L (low voltage), typically around 1.35 V core operation (1.5 V I/O variants possible in some configs).
- Speed: Supports standard DDR3 speeds (commonly DDR3-1066/1333 in this family; check datasheet for exact grades).
- Architecture: Synchronous, 8 banks, burst length 8, with automatic refresh.
- Package/marking: The -12BCN suffix encodes speed grade, temperature range, packaging, and lead-free (BCN) options.
- Use cases: Building blocks for higher-density memory modules and embedded systems; multiple devices can be combined to form larger DIMMs or buffers depending on the design.
- Note: For precise timing (CL, tRCD, tRP), voltage tolerances, temperature range, and package details, consult the official Alliance Memory datasheet and the supplier’s specifications.
Features
AS4C512M16D3LB-12BCN is Alliance Memory’s DDR3 SDRAM device. Key features (typical, check datasheet for exact numbers by speed grade):
- Density/organization: 512 Mb total, 16-bit wide (512M x 16)
- Interface: DDR3 SDRAM, synchronous with an 8-bank architecture
- Internal: 8n prefetch, Burst Length 8
- Refresh: Auto-refresh and self-refresh modes
- Latency: Programmable CAS latency (speed grade dependent)
- Voltage: nominally 1.5V (DDR3); part variants may be 1.35–1.5V family (confirm exact voltage for -12BCN)
- Packaging/Grade: RoHS/lead-free variant (-BCN); operating temperature grade varies by part (commercial/industrial; verify in datasheet)
Note: Exact speed (MT/s), voltage, and packaging depend on the specific speed grade and lot. Refer to the datasheet for the precise specifications of your device.
- Density/organization: 512 Mb total, 16-bit wide (512M x 16)
- Interface: DDR3 SDRAM, synchronous with an 8-bank architecture
- Internal: 8n prefetch, Burst Length 8
- Refresh: Auto-refresh and self-refresh modes
- Latency: Programmable CAS latency (speed grade dependent)
- Voltage: nominally 1.5V (DDR3); part variants may be 1.35–1.5V family (confirm exact voltage for -12BCN)
- Packaging/Grade: RoHS/lead-free variant (-BCN); operating temperature grade varies by part (commercial/industrial; verify in datasheet)
Note: Exact speed (MT/s), voltage, and packaging depend on the specific speed grade and lot. Refer to the datasheet for the precise specifications of your device.
Package
FBGA package (96-ball, lead-free).
Pinout
- Pin count: 84 pins (84-ball BGA)
- Function: 512 Mbit DDR3L SDRAM memory with x16 data width (16-bit bus), low-voltage operation (DDR3L).
- Function: 512 Mbit DDR3L SDRAM memory with x16 data width (16-bit bus), low-voltage operation (DDR3L).
Manufacturer
- Manufacturer: Alliance Memory, Inc.
- What kind of company: A semiconductor company that designs and markets memory ICs (DRAM/SRAM); a fabless memory designer/manufacturer.
- What kind of company: A semiconductor company that designs and markets memory ICs (DRAM/SRAM); a fabless memory designer/manufacturer.
Application
Possible application areas for AS4C512M16D3LB-12BCN:
- Embedded systems and mobile/hand-held devices
- Consumer electronics (set-top boxes, digital cameras, TVs, media players)
- Networking and telecom equipment (routers, switches)
- Automotive and industrial control systems
- Computer memory modules and upgrade/add-on boards
- Embedded systems and mobile/hand-held devices
- Consumer electronics (set-top boxes, digital cameras, TVs, media players)
- Networking and telecom equipment (routers, switches)
- Automotive and industrial control systems
- Computer memory modules and upgrade/add-on boards
出荷
出荷方法私たち
DHL、FedEx、TNT、UPS、またはあなたの選択の他の運送業者を通じてグローバルな出荷サービスを提供します。
出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
支払い
Payment Methods
支払い期間は100%前払いです。
現在、下記の支払い方法のみを受け入れています。:
1. ペイパル
2. クレジット・デビットカード
3. ワイヤー 転送
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