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AS4C128M16D3LB-12BIN

Name: AS4C128M16D3LB-12BIN
Rating: 4.7 (12 reviews)

IC DRAM 2GBIT PARALLEL 96FBGA

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Mfr。パート #AS4C128M16D3LB-12BIN
パッケージ 96-TFBGA
データシート
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仕様

Supplier	Alliance Memory, Inc.
Package	Tray
ProductStatus	Obsolete
MemoryType	Volatile
MemoryFormat	DRAM
Technology	SDRAM - DDR3L
MemorySize	2Gb (128M x 16)
MemoryInterface	Parallel
ClockFrequency	800 MHz
WriteCycleTime-WordPage	15ns
AccessTime	20 ns
Voltage-Supply	1.283V ~ 1.45V
OperatingTemperature	-40°C ~ 95°C (TC)
MountingType	Surface Mount
Package/Case	96-TFBGA

概要

Description

AS4C128M16D3LB-12BIN is a 2 Gbit (128M x 16) synchronous DRAM from Alliance Memory. Key points:
- Organization: 128M words × 16 bits
- Type: Synchronous DRAM with multiplexed address/data bus
- Speed grade: 12BIN (12 ns class)
- Features: auto-refresh, burst operations, page-mode access
- Package/variant: LB denotes lead-free; BIN relates to manufacturing/packaging code
- Typical use: embedded/consumer electronics memory subsystems needing moderate density and bandwidth without a full DDR3/DDR4 controller
For exact electrical specs (voltage, timing parameters, number of banks, burst length), supply voltage, package type, and timing tables, consult the official datasheet.

Features

AS4C128M16D3LB-12BIN is a DDR3L SDRAM device. Key features:
- Organization: 128M × 16 (2 Gbit per device)
- Speed: DDR3L up to 1333 MT/s (PC3-10600) typical
- Voltage: VDD/DQ ~1.35 V (DDR3L); VPP ~2.5 V
- Architecture: 8 banks; 8n prefetch
- Package: Pb-free, LB (lead-free) BGA, 12BIN code
- Operating ranges: commercial and industrial variants available
- General: non-ECC, suitable for memory modules and embedded memory applications
Note: exact timing specs and temperature range depend on the specific lot/grade; consult the datasheet for precise CL/tRCD/tRP values and package details.

Package

Leadless ball-grid array package (LBGA/FBGA). For exact ball count and dimensions, please check the datasheet.

Pinout

- Pin count: 84 pins (84-ball FBGA package).
- Function: A 128-Mbit, 16-bit wide synchronous DRAM (DDR3-type) memory device. Provides 16 data I/O lines with row/column addressing and standard control signals (clock, CS, RAS, CAS, WE, ODT/DM, etc.) for high-speed volatile memory in electronic systems.

Manufacturer

- Manufacturer: Alliance Memory, Inc.
- About the company: A semiconductor company specializing in memory products (DRAM, SRAM, flash); a fabless memory supplier that designs memory solutions and outsources fabrication to foundries.

Application

AS4C128M16D3LB-12BIN is a 128M×16-bit SDRAM device used as system memory. Typical application areas include embedded and consumer electronics (set-top boxes, digital TVs/monitors, DVD players, cameras, printers), networking/telecom equipment (routers, switches), automotive infotainment and instrumentation, and industrial control systems requiring modest-capacity, wide-data-path DRAM. It can serve as main RAM in small form-factor boards and embedded controllers.