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APT30GP60BDQ1G
IGBT PT 600V 100A TO247
- メーカー
- Mfr。パート #APT30GP60BDQ1G
- パッケージ
- データシート
- 在庫中65
100% オリジナル &新しい
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365日の保証
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仕様
| Series | POWER MOS 7® |
| Part Status | Active |
| IGBT Type | PT |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector (Ic) (Max) | 100 A |
| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 30A |
| Power - Max | 463 W |
| Switching Energy | 260µJ (on), 250µJ (off) |
| Input Type | Standard |
| Gate Charge | 90 nC |
| Td (on/off) @ 25°C | 13ns/55ns |
| Test Condition | 400V, 30A, 5Ohm, 15V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Supplier Device Package | TO-247 [B] |
| Base Product Number | APT30GP60 |
| Current - Collector Pulsed (Icm) | 120 A |
概要
Description
APT30GP60BDQ1G is a high-performance N-channel power MOSFET designed for efficient switching applications. With a voltage rating of 600V and a continuous drain current of 30A, this device is suitable for various power management tasks, including power supplies, converters, and motor drives. Its low on-resistance allows for minimal power loss during operation, improving overall system efficiency.
Key features include a fast switching speed, making it ideal for high-frequency applications, and a robust thermal performance that ensures reliable operation under demanding conditions. The APT30GP60BDQ1G typically comes in a TO-220 package, facilitating easy thermal management and mounting in circuit designs. This MOSFET is commonly used in industrial, automotive, and consumer electronics applications where reliable power handling is critical.
For designers, understanding its key specifications, such as gate threshold voltage and maximum junction temperature, is essential for optimal performance in their respective applications.
Key features include a fast switching speed, making it ideal for high-frequency applications, and a robust thermal performance that ensures reliable operation under demanding conditions. The APT30GP60BDQ1G typically comes in a TO-220 package, facilitating easy thermal management and mounting in circuit designs. This MOSFET is commonly used in industrial, automotive, and consumer electronics applications where reliable power handling is critical.
For designers, understanding its key specifications, such as gate threshold voltage and maximum junction temperature, is essential for optimal performance in their respective applications.
Features
The APT30GP60BDQ1G is a high-performance power transistor designed for efficient switching applications. It features:
1. Type: N-channel MOSFET, suitable for various power applications.
2. Voltage Rating: Typically supports a drain-source voltage (V_DS) up to 60V.
3. Current Rating: Capable of handling continuous drain currents around 30A, making it ideal for high-power applications.
4. On-Resistance: Low R_DS(on), which minimizes conduction losses and improves efficiency.
5. Package Type: Available in a robust TO-220 or similar package, facilitating heat dissipation.
6. Gate Threshold Voltage: Designed for low gate drive requirements, which simplifies circuit design.
7. Applications: Suitable for use in power supplies, motor drives, and other high-efficiency power conversion systems.
Overall, the APT30GP60BDQ1G combines efficiency, high current capacity, and robust thermal performance, making it suitable for demanding electronic applications.
1. Type: N-channel MOSFET, suitable for various power applications.
2. Voltage Rating: Typically supports a drain-source voltage (V_DS) up to 60V.
3. Current Rating: Capable of handling continuous drain currents around 30A, making it ideal for high-power applications.
4. On-Resistance: Low R_DS(on), which minimizes conduction losses and improves efficiency.
5. Package Type: Available in a robust TO-220 or similar package, facilitating heat dissipation.
6. Gate Threshold Voltage: Designed for low gate drive requirements, which simplifies circuit design.
7. Applications: Suitable for use in power supplies, motor drives, and other high-efficiency power conversion systems.
Overall, the APT30GP60BDQ1G combines efficiency, high current capacity, and robust thermal performance, making it suitable for demanding electronic applications.
Package
The APT30GP60BDQ1G is typically packaged in a TO-220 form factor, which is a type of metal-encased package designed for high-power applications. This package type allows for effective heat dissipation and easy mounting on heatsinks.
Pinout
The APT30GP60BDQ1G is a power MOSFET with a pin count of 3. It is typically used in high-voltage applications, such as power management and switching.
The pin functions are as follows:
1. Gate (G): Controls the conduction state of the MOSFET; applying a voltage here allows current to flow between the drain and source.
2. Drain (D): The terminal through which the main current flows out of the MOSFET. In a switching application, this is where the load is connected.
3. Source (S): The terminal through which the current enters the MOSFET; it is usually connected to the ground or the negative side of the power supply.
The APT30GP60BDQ1G is designed for high efficiency and thermal performance in power applications.
The pin functions are as follows:
1. Gate (G): Controls the conduction state of the MOSFET; applying a voltage here allows current to flow between the drain and source.
2. Drain (D): The terminal through which the main current flows out of the MOSFET. In a switching application, this is where the load is connected.
3. Source (S): The terminal through which the current enters the MOSFET; it is usually connected to the ground or the negative side of the power supply.
The APT30GP60BDQ1G is designed for high efficiency and thermal performance in power applications.
Manufacturer
The APT30GP60BDQ1G is manufactured by Advanced Power Technology, Inc. (APT), a company specializing in the design and production of power semiconductor devices. APT is known for its innovation in power management solutions, including products such as MOSFETs, IGBTs, and other power modules used in various applications like motor drives, power supplies, and renewable energy systems. The company focuses on providing high-performance products for industries requiring efficient power conversion and management.
Application
The APT30GP60BDQ1G is a high-performance N-channel MOSFET primarily used in industrial applications, including motor drives, power converters, and power management circuits. Its features make it suitable for high-efficiency switching in automotive and renewable energy systems, such as solar inverters. Additionally, it can be utilized in consumer electronics and telecommunications for efficient power regulation and control.
Equivalent
The APT30GP60BDQ1G chip is an N-channel MOSFET. Equivalent products include:
1. IRF3205
2. STP30NF06
3. FQP30N06L
4. BUK7Y30-55
Always verify specifications like voltage, current ratings, and package types before substituting.
1. IRF3205
2. STP30NF06
3. FQP30N06L
4. BUK7Y30-55
Always verify specifications like voltage, current ratings, and package types before substituting.
出荷
出荷方法私たち
DHL、FedEx、TNT、UPS、またはあなたの選択の他の運送業者を通じてグローバルな出荷サービスを提供します。
出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
支払い
Payment Methods
支払い期間は100%前払いです。
現在、下記の支払い方法のみを受け入れています。:
1. ペイパル
2. クレジット・デビットカード
3. ワイヤー 転送
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